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5961-01-103-4619
20 Products
SR505-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011034619
NSN
5961-01-103-4619
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK
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580-734
TRANSISTOR
NSN, MFG P/N
5961011031204
NSN
5961-01-103-1204
MFG
AMPEX SYSTEMS CORP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.239 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM SOURCE SUPPLY VOLTAGE
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8879800002-1
TRANSISTOR
NSN, MFG P/N
5961011031204
NSN
5961-01-103-1204
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.239 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM SOURCE SUPPLY VOLTAGE
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HR3N187
TRANSISTOR
NSN, MFG P/N
5961011031204
NSN
5961-01-103-1204
MFG
RCA CORP DISTRIBUTION AND SPECIAL PRODUCTS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.239 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM SOURCE SUPPLY VOLTAGE
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MFE120
TRANSISTOR
NSN, MFG P/N
5961011031204
NSN
5961-01-103-1204
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.239 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM SOURCE SUPPLY VOLTAGE
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011031265
NSN
5961-01-103-1265
ILCA2-30
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011031265
NSN
5961-01-103-1265
MFG
SIEMENS MICROELECTRONICS INC OPTOELECTRONICS DIV
Description
OVERALL HEIGHT: 0.140 INCHES NOMINAL
OVERALL LENGTH: 0.350 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
SPECIAL FEATURES: 6 PINS
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7531054P1
TRANSISTOR
NSN, MFG P/N
5961011031679
NSN
5961-01-103-1679
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
TRANSISTOR
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19-142F83M00R02
TRANSISTOR
NSN, MFG P/N
5961011032478
NSN
5961-01-103-2478
MFG
CONCURRENT COMPUTER CORPORATION
Description
TRANSISTOR
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8123028
TRANSISTOR
NSN, MFG P/N
5961011032710
NSN
5961-01-103-2710
MFG
ESI ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TERMINALS WILL HAVE EXTENSIONS LAP WELDED TO ENSURE THEY MEET THE 1.500 IN. LENGTH REQUIREMENT; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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P12228-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011033000
NSN
5961-01-103-3000
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
U14640-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011034076
NSN
5961-01-103-4076
U14640-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011034076
NSN
5961-01-103-4076
MFG
PHILIPS SEMICONDUCTORS INC
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
7901446-00
TRANSISTOR
NSN, MFG P/N
5961011034247
NSN
5961-01-103-4247
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 90536
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MFR SOURCE CONTROLLING REFERENCE: 7901446-00
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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SS1502
TRANSISTOR
NSN, MFG P/N
5961011034247
NSN
5961-01-103-4247
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 90536
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MFR SOURCE CONTROLLING REFERENCE: 7901446-00
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
16796-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011034248
NSN
5961-01-103-4248
MFG
ASTRONAUTICS CORPORATION OF AMERICA
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.430 INCHES NOMINAL
OVERALL LENGTH: 0.410 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
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1562138
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011034274
NSN
5961-01-103-4274
1562138
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011034274
NSN
5961-01-103-4274
MFG
FLUKE BIOMEDICAL CORPORATION
Description
DESIGN CONTROL REFERENCE: 1562138
MAJOR COMPONENTS: DUAL TRIODE
MANUFACTURERS CODE: 34511
OVERALL DIAMETER: 0.204 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.670 INCHES MINIMUM AND 0.710 INCHES MAXIMUM
THE MANUFACTURERS DATA:
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UC2138
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011034274
NSN
5961-01-103-4274
MFG
DANBURY UNION CARBIDE CORP SUB OF DOW CO THE
Description
DESIGN CONTROL REFERENCE: 1562138
MAJOR COMPONENTS: DUAL TRIODE
MANUFACTURERS CODE: 34511
OVERALL DIAMETER: 0.204 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.670 INCHES MINIMUM AND 0.710 INCHES MAXIMUM
THE MANUFACTURERS DATA:
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44A352360-015
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961011034456
NSN
5961-01-103-4456
MFG
GENERAL ELECTRIC CO ARMAMENT AND ELECTRICAL SYSTEMS DEPT ELECTRICAL SYSTEMS PRODUCTS DEPT
Description
SEMICONDUCTOR DEVIC
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151-018-9-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011034619
NSN
5961-01-103-4619
151-018-9-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011034619
NSN
5961-01-103-4619
MFG
B&K PRECISION CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK
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48S191A05
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011034619
NSN
5961-01-103-4619
MFG
MOTOROLA COMMUNICATIONS GROUP PARTS DEPT DIV OF MOTOROLA INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK
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M100H
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011034619
NSN
5961-01-103-4619
MFG
GENERAL SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK