My Quote Request
5961-01-103-5131
20 Products
FD6666
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011035131
NSN
5961-01-103-5131
MFG
FAIRCHILD IMAGING INC.
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 6 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011035498
NSN
5961-01-103-5498
05-05563-1A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011035498
NSN
5961-01-103-5498
MFG
BALLANTINE LABORATORIES INC
Description
SEMICONDUCTOR DEVICE,DIODE
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2396742-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011035581
NSN
5961-01-103-5581
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN SIMULATION TRAINING & SUPPORT
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.830 INCHES MAXIMUM
OVERALL LENGTH: 1.575 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 70.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
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PMR27K100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011035581
NSN
5961-01-103-5581
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.830 INCHES MAXIMUM
OVERALL LENGTH: 1.575 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 70.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
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2396742-6
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011035582
NSN
5961-01-103-5582
2396742-6
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011035582
NSN
5961-01-103-5582
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN SIMULATION TRAINING & SUPPORT
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 0.25 MICROAMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REPETITIVE PEAK REVERSE VOLTAGE AND 70.0 REVERSE VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: A10 INVERTED CENTER TAP 1 PHASE
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.575 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SPECIAL FEATURES: ANODE CONNECTED TO CASE (TO-3).
TERMINAL TYPE AND QUANTITY: 2 PIN
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PMR31K100
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011035582
NSN
5961-01-103-5582
PMR31K100
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011035582
NSN
5961-01-103-5582
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 0.25 MICROAMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REPETITIVE PEAK REVERSE VOLTAGE AND 70.0 REVERSE VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: A10 INVERTED CENTER TAP 1 PHASE
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.575 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SPECIAL FEATURES: ANODE CONNECTED TO CASE (TO-3).
TERMINAL TYPE AND QUANTITY: 2 PIN
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011035607
NSN
5961-01-103-5607
MFG
BERTAN ASSOCIATES INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.000 AMPERES PEAK POINT CURRENT
MATERIAL: PLASTIC EPOXY
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 0.890 INCHES MAXIMUM
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
SPECIAL FEATURES: DC OUTPUT MAX VOLTAGE RATING
TERMINAL TYPE AND QUANTITY: 4 PIN
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011035607
NSN
5961-01-103-5607
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.000 AMPERES PEAK POINT CURRENT
MATERIAL: PLASTIC EPOXY
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 0.890 INCHES MAXIMUM
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
SPECIAL FEATURES: DC OUTPUT MAX VOLTAGE RATING
TERMINAL TYPE AND QUANTITY: 4 PIN
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011035838
NSN
5961-01-103-5838
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 7.40 AMPERES NOMINAL FORWARD CURRENT, TOTAL RMS
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.505 INCHES NOMINAL
OVERALL LENGTH: 0.606 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.552 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
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C220CX245
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011035838
NSN
5961-01-103-5838
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
CURRENT RATING PER CHARACTERISTIC: 7.40 AMPERES NOMINAL FORWARD CURRENT, TOTAL RMS
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.505 INCHES NOMINAL
OVERALL LENGTH: 0.606 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.552 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
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4898-00-0003
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011035964
NSN
5961-01-103-5964
4898-00-0003
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011035964
NSN
5961-01-103-5964
MFG
WAVETEK U S INC DIV OF WAVETEK CORP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
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4901-02-2191
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011035965
NSN
5961-01-103-5965
4901-02-2191
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011035965
NSN
5961-01-103-5965
MFG
WAVETEK U S INC DIV OF WAVETEK CORP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39 ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING METHOD: TERMINAL ALL TRANSISTOR
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM ALL TRANSISTOR
TERMINAL LENGTH: 0.500 INCHES MINIMUM ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN ALL TRANSISTOR
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011036169
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011036169
NSN
5961-01-103-6169
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA DENRO SYSTEMS DIV LAND FORCES DIVISION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: DR0360
MANUFACTURERS CODE: 23934
MATERIAL: SILICON
OVERALL HEIGHT: 0.430 INCHES NOMINAL
OVERALL LENGTH: 0.870 INCHES NOMINAL
OVERALL WIDTH: 0.870 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011036169
NSN
5961-01-103-6169
MFG
WAGNER ELECTRIC CORP TUNG-OIL DIV
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: DR0360
MANUFACTURERS CODE: 23934
MATERIAL: SILICON
OVERALL HEIGHT: 0.430 INCHES NOMINAL
OVERALL LENGTH: 0.870 INCHES NOMINAL
OVERALL WIDTH: 0.870 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011036169
NSN
5961-01-103-6169
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011036169
NSN
5961-01-103-6169
MFG
POWER/MATE CO
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: DR0360
MANUFACTURERS CODE: 23934
MATERIAL: SILICON
OVERALL HEIGHT: 0.430 INCHES NOMINAL
OVERALL LENGTH: 0.870 INCHES NOMINAL
OVERALL WIDTH: 0.870 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
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8909NB
COVER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011036222
NSN
5961-01-103-6222
MFG
THERMALLOY CO INC
Description
BODY HEIGHT: 0.360 INCHES NOMINAL
BODY LENGTH: 1.585 INCHES NOMINAL
MATERIAL: NYLON
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101-000091
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011036333
NSN
5961-01-103-6333
101-000091
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011036333
NSN
5961-01-103-6333
MFG
DATA GENERAL CORP M/S 9S17
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
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RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011036333
NSN
5961-01-103-6333
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RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011036333
NSN
5961-01-103-6333
MFG
KECO INDUSTRIES INC.
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
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RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
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5961011036333
NSN
5961-01-103-6333
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RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011036333
NSN
5961-01-103-6333
MFG
GENERAL SEMICONDUCTOR INC
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
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RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011036333
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5961-01-103-6333
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RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011036333
NSN
5961-01-103-6333
MFG
FREESCALE SEMICONDUCTOR INC.
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL