My Quote Request
5961-01-106-3300
20 Products
141-111-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011063300
NSN
5961-01-106-3300
141-111-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011063300
NSN
5961-01-106-3300
MFG
KONTRON AG
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 95542
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 141-111
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.162 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
9800216-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011063301
NSN
5961-01-106-3301
9800216-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011063301
NSN
5961-01-106-3301
MFG
I S S DIV OF SPERRY UNIVAC
Description
III END ITEM IDENTIFICATION: AUTOMATED RADAR TERMINAL SYSTEM 3 (ARTS3)
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.115 INCHES NOMINAL
OVERALL LENGTH: 0.253 INCHES NOMINAL
TERMINAL CIRCLE DIAMETER: 0.032 INCHES NOMINAL
TERMINAL LENGTH: 1.148 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
D301A9
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011063301
NSN
5961-01-106-3301
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: AUTOMATED RADAR TERMINAL SYSTEM 3 (ARTS3)
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.115 INCHES NOMINAL
OVERALL LENGTH: 0.253 INCHES NOMINAL
TERMINAL CIRCLE DIAMETER: 0.032 INCHES NOMINAL
TERMINAL LENGTH: 1.148 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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MPSP13
TRANSISTOR
NSN, MFG P/N
5961011063772
NSN
5961-01-106-3772
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
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MA-4E062
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011063775
NSN
5961-01-106-3775
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
HA31025
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011063776
NSN
5961-01-106-3776
MFG
DOWTY RFL INDUSTRIES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
HA31758
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011063777
NSN
5961-01-106-3777
MFG
DOWTY RFL INDUSTRIES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
15-12589-00
TRANSISTOR
NSN, MFG P/N
5961011064005
NSN
5961-01-106-4005
MFG
COMPAQ FEDERAL LLC
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
Related Searches:
57977-90002
TRANSISTOR
NSN, MFG P/N
5961011064006
NSN
5961-01-106-4006
MFG
AAI CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 32.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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SF58025
TRANSISTOR
NSN, MFG P/N
5961011064006
NSN
5961-01-106-4006
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 32.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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353-3591-441
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011064007
NSN
5961-01-106-4007
353-3591-441
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011064007
NSN
5961-01-106-4007
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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11-10051-00
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011064140
NSN
5961-01-106-4140
11-10051-00
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011064140
NSN
5961-01-106-4140
MFG
COMPAQ FEDERAL LLC
Description
MATERIAL: SILICON
Related Searches:
ECG5414
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011064448
NSN
5961-01-106-4448
MFG
PHILIPS ECG INC DIV OF NORTH AMERICAN PHILIPS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
15-11686-00
TRANSISTOR
NSN, MFG P/N
5961011064610
NSN
5961-01-106-4610
MFG
COMPAQ FEDERAL LLC
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
15-09142-01
TRANSISTOR
NSN, MFG P/N
5961011064611
NSN
5961-01-106-4611
MFG
COMPAQ FEDERAL LLC
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
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15-12590-00
TRANSISTOR
NSN, MFG P/N
5961011064612
NSN
5961-01-106-4612
MFG
COMPAQ FEDERAL LLC
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
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EP1275
TRANSISTOR
NSN, MFG P/N
5961011064612
NSN
5961-01-106-4612
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
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PN3565
TRANSISTOR
NSN, MFG P/N
5961011064613
NSN
5961-01-106-4613
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.3 GRAMS
CURRENT RATING PER CHARACTERISTIC: 0.10 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 1.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MINIMUM VOLTAGE; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.475 INCHES MINIMUM AND 0.525 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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B4029132
TRANSISTOR
NSN, MFG P/N
5961011064614
NSN
5961-01-106-4614
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TEST DATA DOCUMENT: 80063-SM-B-963752 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
CD1629
TRANSISTOR
NSN, MFG P/N
5961011064614
NSN
5961-01-106-4614
MFG
VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TEST DATA DOCUMENT: 80063-SM-B-963752 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN