My Quote Request
5961-01-110-3045
20 Products
MR751
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011103045
NSN
5961-01-110-3045
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 22.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 400.00 AMPERES MAXIMUM FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.395 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL LENGTH: 0.259 INCHES MINIMUM AND 0.281 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 120.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 70.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
1901-0781
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011103046
NSN
5961-01-110-3046
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
III END ITEM IDENTIFICATION: SUPPORT EQUIPMENT, F-15 AIRCRAFT
Related Searches:
MR754
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011103046
NSN
5961-01-110-3046
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: SUPPORT EQUIPMENT, F-15 AIRCRAFT
Related Searches:
1901-0732
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011103047
NSN
5961-01-110-3047
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SR3010-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011103047
NSN
5961-01-110-3047
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1902-0644
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011103048
NSN
5961-01-110-3048
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SZP40127
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011103048
NSN
5961-01-110-3048
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1902-0643
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011103049
NSN
5961-01-110-3049
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N2979B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011103049
NSN
5961-01-110-3049
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1906-0051
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011103052
NSN
5961-01-110-3052
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
VE18X
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011103052
NSN
5961-01-110-3052
MFG
MICRO QUALITY SEMICONDUCTOR INC SUB OF MICROSEMI CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1906-0080
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011103053
NSN
5961-01-110-3053
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: STRATEGIC WEAPON SYSTEMS (POSEIDON & TRIDENT); SUPPORT EQUIPMENT, B-1 AIRCRAFT; GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE, LOS ANGELES CLASS SSN (688), SPRUANCE CLASS DD (963), EMORY S. LAND CLASS AS
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
VJ647
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011103053
NSN
5961-01-110-3053
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: STRATEGIC WEAPON SYSTEMS (POSEIDON & TRIDENT); SUPPORT EQUIPMENT, B-1 AIRCRAFT; GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE, LOS ANGELES CLASS SSN (688), SPRUANCE CLASS DD (963), EMORY S. LAND CLASS AS
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
38000004-1001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011103054
NSN
5961-01-110-3054
38000004-1001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011103054
NSN
5961-01-110-3054
MFG
GENICOM CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SD5154
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011103056
NSN
5961-01-110-3056
MFG
TRANSISTOR DEVICES INC . DBA TDI POWER
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
D44R3
TRANSISTOR
NSN, MFG P/N
5961011103359
NSN
5961-01-110-3359
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.390 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MINIMUM AND 0.355 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 500.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE, WITH BASE SHORT-CIRCUITED TO EMITTER AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
345-224-016
TRANSISTOR
NSN, MFG P/N
5961011103360
NSN
5961-01-110-3360
MFG
INTERSTATE ELECTRONICS CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.140 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.560 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
547010
TRANSISTOR
NSN, MFG P/N
5961011103360
NSN
5961-01-110-3360
MFG
PIONEER MAGNETICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.140 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.560 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
D45C11
TRANSISTOR
NSN, MFG P/N
5961011103360
NSN
5961-01-110-3360
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.140 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.560 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
1N3050B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011103365
NSN
5961-01-110-3365
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.40 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3050B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/115
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0