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5961-01-133-5970

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MR818

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011335970

NSN

5961-01-133-5970

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MR818

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011335970

NSN

5961-01-133-5970

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: ACNI 94987
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

922-6508-012

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011334566

NSN

5961-01-133-4566

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922-6508-012

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011334566

NSN

5961-01-133-4566

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DATA LINK;AIRCRAFT, C-2A (REPROCURED); HELICOPTER, H-53E; EMORY S. LAND CLASS AS; HELICOPTER, ADVANCE ATTACK, AH-1W; 2M/ATE MICROMINIAUTURE AUTOMATIC TEST EQUIPMENT; TARAWA CLASS LHA; LANDING CRAFT AIR CUSHION (LCAC); HELICOPTER, SEARCH AND RESCUE,
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
~1: HH-60H; HELICOPTER, USCG SEARCH AND RESCUE, HH-60J

GC40605

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011334566

NSN

5961-01-133-4566

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GC40605

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011334566

NSN

5961-01-133-4566

MFG

MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DATA LINK;AIRCRAFT, C-2A (REPROCURED); HELICOPTER, H-53E; EMORY S. LAND CLASS AS; HELICOPTER, ADVANCE ATTACK, AH-1W; 2M/ATE MICROMINIAUTURE AUTOMATIC TEST EQUIPMENT; TARAWA CLASS LHA; LANDING CRAFT AIR CUSHION (LCAC); HELICOPTER, SEARCH AND RESCUE,
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
~1: HH-60H; HELICOPTER, USCG SEARCH AND RESCUE, HH-60J

MA47230

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011334566

NSN

5961-01-133-4566

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MA47230

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011334566

NSN

5961-01-133-4566

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DATA LINK;AIRCRAFT, C-2A (REPROCURED); HELICOPTER, H-53E; EMORY S. LAND CLASS AS; HELICOPTER, ADVANCE ATTACK, AH-1W; 2M/ATE MICROMINIAUTURE AUTOMATIC TEST EQUIPMENT; TARAWA CLASS LHA; LANDING CRAFT AIR CUSHION (LCAC); HELICOPTER, SEARCH AND RESCUE,
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
~1: HH-60H; HELICOPTER, USCG SEARCH AND RESCUE, HH-60J

QPND-4912

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011334566

NSN

5961-01-133-4566

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QPND-4912

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011334566

NSN

5961-01-133-4566

MFG

HEWLETT PACKARD CO

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DATA LINK;AIRCRAFT, C-2A (REPROCURED); HELICOPTER, H-53E; EMORY S. LAND CLASS AS; HELICOPTER, ADVANCE ATTACK, AH-1W; 2M/ATE MICROMINIAUTURE AUTOMATIC TEST EQUIPMENT; TARAWA CLASS LHA; LANDING CRAFT AIR CUSHION (LCAC); HELICOPTER, SEARCH AND RESCUE,
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
~1: HH-60H; HELICOPTER, USCG SEARCH AND RESCUE, HH-60J

U9510

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011334566

NSN

5961-01-133-4566

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U9510

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011334566

NSN

5961-01-133-4566

MFG

MICRO USPD INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DATA LINK;AIRCRAFT, C-2A (REPROCURED); HELICOPTER, H-53E; EMORY S. LAND CLASS AS; HELICOPTER, ADVANCE ATTACK, AH-1W; 2M/ATE MICROMINIAUTURE AUTOMATIC TEST EQUIPMENT; TARAWA CLASS LHA; LANDING CRAFT AIR CUSHION (LCAC); HELICOPTER, SEARCH AND RESCUE,
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
~1: HH-60H; HELICOPTER, USCG SEARCH AND RESCUE, HH-60J

692976

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011334812

NSN

5961-01-133-4812

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692976

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011334812

NSN

5961-01-133-4812

MFG

CATERPILLAR INC. DBA CATERPILLAR DIV GOVERNMENTAL AND DEFENSE PRODUCTS

SR453

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011334812

NSN

5961-01-133-4812

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SR453

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011334812

NSN

5961-01-133-4812

MFG

EFCOR INC

54085164

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961011334988

NSN

5961-01-133-4988

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54085164

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961011334988

NSN

5961-01-133-4988

MFG

RICOH AMERICAS CORPORATION

SR14-12

SILICON RECTIFIER

NSN, MFG P/N

5961011335111

NSN

5961-01-133-5111

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SR14-12

SILICON RECTIFIER

NSN, MFG P/N

5961011335111

NSN

5961-01-133-5111

MFG

TTC/WILKINSON

12043-0161

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011335413

NSN

5961-01-133-5413

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12043-0161

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011335413

NSN

5961-01-133-5413

MFG

RAYTHEON COMPANY DBA RAYTHEON

SR1557

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011335414

NSN

5961-01-133-5414

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SR1557

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011335414

NSN

5961-01-133-5414

MFG

FREESCALE SEMICONDUCTOR INC.

227-6035P010

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011335755

NSN

5961-01-133-5755

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227-6035P010

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011335755

NSN

5961-01-133-5755

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

2N6577

TRANSISTOR

NSN, MFG P/N

5961011335967

NSN

5961-01-133-5967

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2N6577

TRANSISTOR

NSN, MFG P/N

5961011335967

NSN

5961-01-133-5967

MFG

SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205

50240109

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011335968

NSN

5961-01-133-5968

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50240109

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011335968

NSN

5961-01-133-5968

MFG

SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205

95575001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011335969

NSN

5961-01-133-5969

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95575001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011335969

NSN

5961-01-133-5969

MFG

SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205

38100818-1001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011335970

NSN

5961-01-133-5970

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38100818-1001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011335970

NSN

5961-01-133-5970

MFG

GENICOM CORP

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: ACNI 94987
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

D2601N

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011335970

NSN

5961-01-133-5970

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D2601N

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011335970

NSN

5961-01-133-5970

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: ACNI 94987
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

F52003050

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011335970

NSN

5961-01-133-5970

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F52003050

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011335970

NSN

5961-01-133-5970

MFG

FSG INC

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: ACNI 94987
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

GI818

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011335970

NSN

5961-01-133-5970

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GI818

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011335970

NSN

5961-01-133-5970

MFG

GENERAL INSTRUMENT CORP OPTOELECTRONICS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: ACNI 94987
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE