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5961-01-134-5245
20 Products
STM1002
TRANSISTOR
NSN, MFG P/N
5961011345245
NSN
5961-01-134-5245
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
CURRENT RATING PER CHARACTERISTIC: -2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N5153L
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/545
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/545 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.141 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND -100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
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922-6511-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011345247
NSN
5961-01-134-5247
922-6511-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011345247
NSN
5961-01-134-5247
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: 922-6511-012
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-35
MANUFACTURERS CODE: 13499
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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16R1A120
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011345248
NSN
5961-01-134-5248
16R1A120
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011345248
NSN
5961-01-134-5248
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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16RIA120
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011345248
NSN
5961-01-134-5248
16RIA120
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011345248
NSN
5961-01-134-5248
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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GR836P1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011345248
NSN
5961-01-134-5248
GR836P1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011345248
NSN
5961-01-134-5248
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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14233700-02
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011345336
NSN
5961-01-134-5336
14233700-02
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011345336
NSN
5961-01-134-5336
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
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SDAX180CAT
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011345336
NSN
5961-01-134-5336
SDAX180CAT
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011345336
NSN
5961-01-134-5336
MFG
SOLID STATE DEVICES INC.
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
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583R531H05
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011346494
NSN
5961-01-134-6494
583R531H05
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011346494
NSN
5961-01-134-6494
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REVERSE VOLTAGE, INSTANTANEOUS AND 200.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.600 INCHES MAXIMUM
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.450 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
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SA7641
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011346494
NSN
5961-01-134-6494
SA7641
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011346494
NSN
5961-01-134-6494
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REVERSE VOLTAGE, INSTANTANEOUS AND 200.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.600 INCHES MAXIMUM
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.450 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
119306-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011347174
NSN
5961-01-134-7174
119306-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011347174
NSN
5961-01-134-7174
MFG
THALES ATM INC.
Description
DESIGN CONTROL REFERENCE: 119306-0001
III END ITEM IDENTIFICATION: PART OF ILS
MAJOR COMPONENTS: DIODE 20,PRINTED WIRING BOARD 1
MANUFACTURERS CODE: 65597
MOUNTING CONFIGURATION: PLUGIN MTD
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 8.500 INCHES NOMINAL
OVERALL WIDTH: 4.500 INCHES NOMINAL
THE MANUFACTURERS DATA:
Related Searches:
119356-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011347175
NSN
5961-01-134-7175
119356-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011347175
NSN
5961-01-134-7175
MFG
THALES ATM INC.
Description
DESIGN CONTROL REFERENCE: 119356-0001
III END ITEM IDENTIFICATION: PART OF ILS
MAJOR COMPONENTS: DIODE 19,PRINTED WIRING BOARD 1
MANUFACTURERS CODE: 65597
MOUNTING CONFIGURATION: PLUGIN MTD
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 7.250 INCHES NOMINAL
OVERALL WIDTH: 5.750 INCHES NOMINAL
THE MANUFACTURERS DATA:
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MA-4325F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011347610
NSN
5961-01-134-7610
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.018 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 48.0 MAXIMUM BASE SUPPLY VOLTAGE
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MHQ2483
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011347826
NSN
5961-01-134-7826
MHQ2483
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011347826
NSN
5961-01-134-7826
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
295540
TRANSISTOR
NSN, MFG P/N
5961011347968
NSN
5961-01-134-7968
MFG
EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 0.25 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: EXTERNAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.275 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.1 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER
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C1-12Z
TRANSISTOR
NSN, MFG P/N
5961011347968
NSN
5961-01-134-7968
MFG
VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 0.25 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: EXTERNAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.275 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.1 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011349061
NSN
5961-01-134-9061
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2N6151
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011349062
NSN
5961-01-134-9062
MFG
TRIAC ELECTRONIC SYSTEMS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
584R517H01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011349140
NSN
5961-01-134-9140
584R517H01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011349140
NSN
5961-01-134-9140
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: 584R517H01
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 97942
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
354298-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011350006
NSN
5961-01-135-0006
354298-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011350006
NSN
5961-01-135-0006
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 18.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 SOURCE SUPPLY VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
DESIGN CONTROL REFERENCE: 354298-1
MANUFACTURERS CODE: 3B150
MATERIAL: SILICON
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 4.125 INCHES MAXIMUM
OVERALL LENGTH: 5.887 INCHES MINIMUM AND 6.087 INCHES MAXIMUM
OVERALL WIDTH: 2.485 INCHES MINIMUM AND 2.515 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
2801035
RECTIFIER,ROTATING
NSN, MFG P/N
5961011350072
NSN
5961-01-135-0072
MFG
GENERAL MOTORS CORP DELCO PRODUCTS DIV MACHINE CONTROL SYSTEMS
Description
RECTIFIER,ROTATING