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5961-01-139-6285
20 Products
1-182
FLOOD DIODE ASSEMBL
NSN, MFG P/N
5961011396285
NSN
5961-01-139-6285
MFG
MOTOROLA INC MOTOROLA AUTOMOTIVE ELECTRONICS
Description
III END ITEM IDENTIFICATION: 1905-00-935-6057
Related Searches:
28459/014
TRANSISTOR
NSN, MFG P/N
5961011394332
NSN
5961-01-139-4332
MFG
AEROFLEX WICHITA INC.
Description
TRANSISTOR
Related Searches:
2N4859A
TRANSISTOR
NSN, MFG P/N
5961011394332
NSN
5961-01-139-4332
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
TRANSISTOR
Related Searches:
1377-8938
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011394335
NSN
5961-01-139-4335
MFG
LINDE LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
5930247
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011394336
NSN
5961-01-139-4336
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES NOMINAL REVERSE CURRENT, INSTANTANEOUS
FUNCTION FOR WHICH DESIGNED: VARACTOR DIODE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.060 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
DKV4533-90
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011394336
NSN
5961-01-139-4336
DKV4533-90
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011394336
NSN
5961-01-139-4336
MFG
SKYWORKS SOLUTIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES NOMINAL REVERSE CURRENT, INSTANTANEOUS
FUNCTION FOR WHICH DESIGNED: VARACTOR DIODE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.060 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
28372-213
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011394338
NSN
5961-01-139-4338
MFG
AEROFLEX WICHITA INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
28372-473
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011394339
NSN
5961-01-139-4339
MFG
AEROFLEX WICHITA INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
153-0603-01
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011394340
NSN
5961-01-139-4340
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
153-0610-02
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011394341
NSN
5961-01-139-4341
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
INCLOSURE MATERIAL: PLASTIC ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: PNP ALL TRANSISTOR
MOUNTING METHOD: TERMINAL ALL TRANSISTOR
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM ALL TRANSISTOR
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM ALL TRANSISTOR
TERMINAL LENGTH: 0.500 INCHES MINIMUM ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD ALL TRANSISTOR
TRANSFER RATIO: 70.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 110.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
Related Searches:
0N502682
TRANSISTOR
NSN, MFG P/N
5961011395047
NSN
5961-01-139-5047
MFG
NATIONAL SECURITY AGENCY
Description
INCLOSURE MATERIAL: METAL
OVERALL LENGTH: 0.710 INCHES NOMINAL
Related Searches:
4271-2906
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011395218
NSN
5961-01-139-5218
4271-2906
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011395218
NSN
5961-01-139-5218
MFG
GENRAD INC
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.785 INCHES NOMINAL
OVERALL WIDTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION SEMICONDUCTOR PNP
Related Searches:
MPQ2906
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011395218
NSN
5961-01-139-5218
MPQ2906
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011395218
NSN
5961-01-139-5218
MFG
FREESCALE SEMICONDUCTOR INC.
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.785 INCHES NOMINAL
OVERALL WIDTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION SEMICONDUCTOR PNP
Related Searches:
77228
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011395227
NSN
5961-01-139-5227
MFG
DURHAM ELECTRIC CO INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
A-2105
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011395227
NSN
5961-01-139-5227
MFG
BURKE PRODUCTS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MR-752
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011395227
NSN
5961-01-139-5227
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
T500-14-80-0-4-AB
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011395267
NSN
5961-01-139-5267
T500-14-80-0-4-AB
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011395267
NSN
5961-01-139-5267
MFG
EATON CORPORATION
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
T500148004AB
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011395267
NSN
5961-01-139-5267
T500148004AB
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011395267
NSN
5961-01-139-5267
MFG
POWEREX INC
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
1282V027
TRANSISTOR
NSN, MFG P/N
5961011395497
NSN
5961-01-139-5497
MFG
HONEYWELL AEROSPACE YEOVIL HONEYWELL AEROSPACE YEOVIL
Description
TRANSISTOR
Related Searches:
J175
TRANSISTOR
NSN, MFG P/N
5961011395499
NSN
5961-01-139-5499
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.188 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.022 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM GATE TO SOURCE VOLTAGE