My Quote Request
5961-01-140-2827
20 Products
4271-0700
TRANSISTOR
NSN, MFG P/N
5961011402827
NSN
5961-01-140-2827
MFG
GENRAD INC
Description
TRANSISTOR
Related Searches:
357880-4
TRANSISTOR
NSN, MFG P/N
5961011402827
NSN
5961-01-140-2827
MFG
CENTRAL STATES MAINTENANCE INC
Description
TRANSISTOR
Related Searches:
1188AS4065
TRANSISTOR
NSN, MFG P/N
5961011402829
NSN
5961-01-140-2829
MFG
NAVAL AIR SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 0.70 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.20 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
128
TRANSISTOR
NSN, MFG P/N
5961011402829
NSN
5961-01-140-2829
MFG
NTE ELECTRONICS INC SUB OF SOLID STATE INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.70 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.20 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
40407
TRANSISTOR
NSN, MFG P/N
5961011402829
NSN
5961-01-140-2829
MFG
HARRIS CORP SEMICONDUCTOR SECTOR
Description
CURRENT RATING PER CHARACTERISTIC: 0.70 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.20 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
40407S
TRANSISTOR
NSN, MFG P/N
5961011402829
NSN
5961-01-140-2829
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 0.70 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.20 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
ECG128
TRANSISTOR
NSN, MFG P/N
5961011402829
NSN
5961-01-140-2829
MFG
PHILIPS ECG INC DIV OF NORTH AMERICAN PHILIPS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 0.70 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.20 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2N6550
TRANSISTOR
NSN, MFG P/N
5961011402830
NSN
5961-01-140-2830
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
C413N
TRANSISTOR
NSN, MFG P/N
5961011402830
NSN
5961-01-140-2830
MFG
TELEDYNE INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
641C029G01
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011402849
NSN
5961-01-140-2849
641C029G01
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011402849
NSN
5961-01-140-2849
MFG
WESTINGHOUSE ELECTRIC CORP GENERAL CONTROL DIV
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
75HQ045
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011402963
NSN
5961-01-140-2963
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/SQS53A EC7 03538
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 03538-7849537 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
7849537P001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011402963
NSN
5961-01-140-2963
7849537P001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011402963
NSN
5961-01-140-2963
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/SQS53A EC7 03538
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 03538-7849537 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
2N6661
TRANSISTOR
NSN, MFG P/N
5961011403180
NSN
5961-01-140-3180
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM OFF-STATE CURRENT, DC AND 100.00 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 8.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 03538-7849836P001 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 90.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 15.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE
Related Searches:
7849836P001
TRANSISTOR
NSN, MFG P/N
5961011403180
NSN
5961-01-140-3180
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM OFF-STATE CURRENT, DC AND 100.00 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 8.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 03538-7849836P001 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 90.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 15.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE
Related Searches:
PC70848-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011403181
NSN
5961-01-140-3181
MFG
ROCKWELL COLLINS AEROSPACE & ELECTRONICS INC. DBA RC DISPLAYS SYSTEMS
Description
DESIGN CONTROL REFERENCE: PC70848-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 09344
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
D77E0005-33
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011403817
NSN
5961-01-140-3817
D77E0005-33
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011403817
NSN
5961-01-140-3817
MFG
MCDONNELL DOUGLAS CORP MCDONNELL DOUGLAS ELECTRONIC SYSTEMS CO
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DESIGN CONTROL REFERENCE: D77E0005-33
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 12464
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
JAN2N6385
TRANSISTOR
NSN, MFG P/N
5961011404217
NSN
5961-01-140-4217
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 0.25 AMPERES NOMINAL BASE CURRENT, DC AND 10.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N6385
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/523
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/523 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2N5347
TRANSISTOR
NSN, MFG P/N
5961011404369
NSN
5961-01-140-4369
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: CLOSED-LOOP 03950
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-59
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.320 INCHES MINIMUM AND 0.468 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5835 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
151-0693-01
TRANSISTOR
NSN, MFG P/N
5961011404370
NSN
5961-01-140-4370
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
CURRENT RATING PER CHARACTERISTIC: 0.10 MICROAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-202
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.880 INCHES MAXIMUM
OVERALL WIDTH: 0.410 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: THE MAXIMUM VOLTAGE RATING IS A MINIMUM VALUE IAW DWG NO. 151-0683-01 FSCM 80009; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.400 INCHES MINIMUM AND 0.510 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
151-0694-01
TRANSISTOR
NSN, MFG P/N
5961011404371
NSN
5961-01-140-4371
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-202
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.880 INCHES MAXIMUM
OVERALL WIDTH: 0.410 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.400 INCHES MINIMUM AND 0.510 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN