My Quote Request
5961-01-143-3242
20 Products
MA-45125-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011433242
NSN
5961-01-143-3242
MA-45125-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011433242
NSN
5961-01-143-3242
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CURRENT RATING PER CHARACTERISTIC: 0.01 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 9N770
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 600.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: CR2088001
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.123 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE GATE TO SOURCE BREAKDOWN VOLTAGE
Related Searches:
2N6659/750
TRANSISTOR
NSN, MFG P/N
5961011432530
NSN
5961-01-143-2530
MFG
SEMTECH CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM PEAK PULSE CURRENT AND 2.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 8.33 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: BURN-IN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 96214-808382 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 35.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 15.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE
Related Searches:
808382-2
TRANSISTOR
NSN, MFG P/N
5961011432530
NSN
5961-01-143-2530
MFG
SEMITRONICS CORP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM PEAK PULSE CURRENT AND 2.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 8.33 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: BURN-IN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 96214-808382 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 35.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 15.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE
Related Searches:
SC5961-0099-1
TRANSISTOR
NSN, MFG P/N
5961011432530
NSN
5961-01-143-2530
MFG
DRS ICAS, LLC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM PEAK PULSE CURRENT AND 2.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 8.33 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: BURN-IN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 96214-808382 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 35.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 15.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE
Related Searches:
014-654
TRANSISTOR
NSN, MFG P/N
5961011432532
NSN
5961-01-143-2532
MFG
DOA INC
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES NOMINAL
OVERALL HEIGHT: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 0.4 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
PM3646-18
TRANSISTOR
NSN, MFG P/N
5961011432532
NSN
5961-01-143-2532
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES NOMINAL
OVERALL HEIGHT: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 0.4 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
SVD300-12-D04ISOLATED
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011432533
NSN
5961-01-143-2533
SVD300-12-D04ISOLATED
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011432533
NSN
5961-01-143-2533
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1072-7931
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011432534
NSN
5961-01-143-2534
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN MISSION SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.030 INCHES MINIMUM AND 0.034 INCHES MAXIMUM
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
580-933
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011432535
NSN
5961-01-143-2535
MFG
DOA INC
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-92
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE
Related Searches:
J174-18
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011432535
NSN
5961-01-143-2535
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-92
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE
Related Searches:
238Z024U01
TRANSISTOR
NSN, MFG P/N
5961011432536
NSN
5961-01-143-2536
MFG
DELTA DATA SYSTEMS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 84.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 50.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 350.0 MINIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 2.0 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
Related Searches:
SVT6251
TRANSISTOR
NSN, MFG P/N
5961011432536
NSN
5961-01-143-2536
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 84.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 50.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 350.0 MINIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 2.0 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
Related Searches:
MBD701
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011432539
NSN
5961-01-143-2539
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.016 INCHES MINIMUM AND 0.019 INCHES MAXIMUM
TERMINAL LENGTH: 0.594 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
FD1029CK
TRANSISTOR
NSN, MFG P/N
5961011433038
NSN
5961-01-143-3038
MFG
GTE COMMUNICATION SYSTEMS CORP
Description
CURRENT RATING PER CHARACTERISTIC: -7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -3.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 30.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -95.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -95.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -20.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
479-1240-047
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011433132
NSN
5961-01-143-3132
479-1240-047
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011433132
NSN
5961-01-143-3132
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 19.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4468
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: LGM 30 11293
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
JANTXV1N4468
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011433132
NSN
5961-01-143-3132
JANTXV1N4468
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011433132
NSN
5961-01-143-3132
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 19.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4468
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: LGM 30 11293
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
11500479-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011433189
NSN
5961-01-143-3189
11500479-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011433189
NSN
5961-01-143-3189
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CAPACITANCE RATING IN PICOFARADS: 10000.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: BURN IN
FUNCTION FOR WHICH DESIGNED: VARACTOR DIODE
III END ITEM IDENTIFICATION: 6920-01-234-7465
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 18876
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 11500479-5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.636 INCHES MAXIMUM
OVERALL LENGTH: 0.745 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 47.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
V47ZXR100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011433189
NSN
5961-01-143-3189
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
CAPACITANCE RATING IN PICOFARADS: 10000.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: BURN IN
FUNCTION FOR WHICH DESIGNED: VARACTOR DIODE
III END ITEM IDENTIFICATION: 6920-01-234-7465
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 18876
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 11500479-5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.636 INCHES MAXIMUM
OVERALL LENGTH: 0.745 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 47.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
810002-529
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011433216
NSN
5961-01-143-3216
810002-529
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011433216
NSN
5961-01-143-3216
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CR2088001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011433242
NSN
5961-01-143-3242
MFG
TELEPHONICS CORP/PRD INSTRUMENTS
Description
CURRENT RATING PER CHARACTERISTIC: 0.01 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 9N770
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 600.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: CR2088001
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.123 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE GATE TO SOURCE BREAKDOWN VOLTAGE