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5961-01-146-4033

20 Products

AED003688-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011464033

NSN

5961-01-146-4033

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AED003688-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011464033

NSN

5961-01-146-4033

MFG

GOODRICH CONTROL SYSTEMS LTD

Description

CURRENT RATING PER CHARACTERISTIC: 85.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.700 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.263 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 38.6 MAXIMUM NOMINAL REGULATOR VOLTAGE

2N5592

TRANSISTOR

NSN, MFG P/N

5961011463015

NSN

5961-01-146-3015

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2N5592

TRANSISTOR

NSN, MFG P/N

5961011463015

NSN

5961-01-146-3015

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: VARIOUS
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5903 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -50.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE AND 50.0 MAXIMUM DRAIN TO GATE VOLTAGE

JANTX1N647-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011463016

NSN

5961-01-146-3016

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JANTX1N647-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011463016

NSN

5961-01-146-3016

MFG

GENERAL SEMICONDUCTOR INC

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
III END ITEM IDENTIFICATION: MONITOR VOLT. 94271
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO. L03243; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 480.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

L03243

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011463016

NSN

5961-01-146-3016

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L03243

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011463016

NSN

5961-01-146-3016

MFG

DLA LAND AND MARITIME

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
III END ITEM IDENTIFICATION: MONITOR VOLT. 94271
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO. L03243; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 480.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

JAN1N4978

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011463018

NSN

5961-01-146-3018

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JAN1N4978

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011463018

NSN

5961-01-146-3018

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4978
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 68.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

1884-0208

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011463574

NSN

5961-01-146-3574

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1884-0208

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011463574

NSN

5961-01-146-3574

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-48
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.615 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPNP
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 150.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE

JANTX2N2608

TRANSISTOR

NSN, MFG P/N

5961011463635

NSN

5961-01-146-3635

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JANTX2N2608

TRANSISTOR

NSN, MFG P/N

5961011463635

NSN

5961-01-146-3635

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N2608
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
III END ITEM IDENTIFICATION: VARIOUS
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/295
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/295 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES MINIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

1N755A-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011463636

NSN

5961-01-146-3636

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1N755A-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011463636

NSN

5961-01-146-3636

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 55.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N755A-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL S
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: 5865-01-109-1701
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

JAN1N755A-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011463636

NSN

5961-01-146-3636

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JAN1N755A-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011463636

NSN

5961-01-146-3636

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 55.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N755A-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL S
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: 5865-01-109-1701
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

003825-1

TRANSISTOR

NSN, MFG P/N

5961011464024

NSN

5961-01-146-4024

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003825-1

TRANSISTOR

NSN, MFG P/N

5961011464024

NSN

5961-01-146-4024

MFG

KELSEY-HAYES COMPANY INC DBA TRW AERONAUTICAL SYSTEMS-LUCAS AEROSPACE DIV CUSTOMER SUPPORT AMERICAS SPARES

AED003825-1

TRANSISTOR

NSN, MFG P/N

5961011464024

NSN

5961-01-146-4024

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AED003825-1

TRANSISTOR

NSN, MFG P/N

5961011464024

NSN

5961-01-146-4024

MFG

GOODRICH CONTROL SYSTEMS LTD

AED003672-1

TRANSISTOR

NSN, MFG P/N

5961011464025

NSN

5961-01-146-4025

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AED003672-1

TRANSISTOR

NSN, MFG P/N

5961011464025

NSN

5961-01-146-4025

MFG

GOODRICH CONTROL SYSTEMS LTD

Description

CURRENT RATING PER CHARACTERISTIC: -2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND -6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

003858-1

TRANSISTOR

NSN, MFG P/N

5961011464026

NSN

5961-01-146-4026

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003858-1

TRANSISTOR

NSN, MFG P/N

5961011464026

NSN

5961-01-146-4026

MFG

KELSEY-HAYES COMPANY INC DBA TRW AERONAUTICAL SYSTEMS-LUCAS AEROSPACE DIV CUSTOMER SUPPORT AMERICAS SPARES

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 10.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 200.0 MINIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

AED003858-1

TRANSISTOR

NSN, MFG P/N

5961011464026

NSN

5961-01-146-4026

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AED003858-1

TRANSISTOR

NSN, MFG P/N

5961011464026

NSN

5961-01-146-4026

MFG

GOODRICH CONTROL SYSTEMS LTD

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 10.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 200.0 MINIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

AED003042-1

TRANSISTOR

NSN, MFG P/N

5961011464027

NSN

5961-01-146-4027

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AED003042-1

TRANSISTOR

NSN, MFG P/N

5961011464027

NSN

5961-01-146-4027

MFG

GOODRICH CONTROL SYSTEMS LTD

003227-2

TRANSISTOR

NSN, MFG P/N

5961011464028

NSN

5961-01-146-4028

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003227-2

TRANSISTOR

NSN, MFG P/N

5961011464028

NSN

5961-01-146-4028

MFG

KELSEY-HAYES COMPANY INC DBA TRW AERONAUTICAL SYSTEMS-LUCAS AEROSPACE DIV CUSTOMER SUPPORT AMERICAS SPARES

AED003227-2

TRANSISTOR

NSN, MFG P/N

5961011464028

NSN

5961-01-146-4028

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AED003227-2

TRANSISTOR

NSN, MFG P/N

5961011464028

NSN

5961-01-146-4028

MFG

GOODRICH CONTROL SYSTEMS LTD

15-251009-002

TRANSISTOR

NSN, MFG P/N

5961011464029

NSN

5961-01-146-4029

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15-251009-002

TRANSISTOR

NSN, MFG P/N

5961011464029

NSN

5961-01-146-4029

MFG

C&D TECHNOLOGIES INC. DBA DYNASTY DIVISION

AED003475-12

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011464030

NSN

5961-01-146-4030

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AED003475-12

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011464030

NSN

5961-01-146-4030

MFG

GOODRICH CONTROL SYSTEMS LTD

AED003475-4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011464032

NSN

5961-01-146-4032

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AED003475-4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011464032

NSN

5961-01-146-4032

MFG

GOODRICH CONTROL SYSTEMS LTD