My Quote Request
5961-01-150-8677
20 Products
202001-004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011508677
NSN
5961-01-150-8677
202001-004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011508677
NSN
5961-01-150-8677
MFG
C&D TECHNOLOGIES INC. DBA DYNASTY DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.128 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
151-0406-02
TRANSISTOR
NSN, MFG P/N
5961011508667
NSN
5961-01-150-8667
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.00 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 45.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 250.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 150.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
ST1264H
TRANSISTOR
NSN, MFG P/N
5961011508667
NSN
5961-01-150-8667
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.00 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 45.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 250.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 150.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
3-22701
TRANSISTOR
NSN, MFG P/N
5961011508668
NSN
5961-01-150-8668
MFG
DATA CHECK CORP DIVISION OF LAVI SYSTEMS
Description
TRANSISTOR
Related Searches:
KE4093
TRANSISTOR
NSN, MFG P/N
5961011508668
NSN
5961-01-150-8668
MFG
SOLITRON DEVICES INC.
Description
TRANSISTOR
Related Searches:
742C3025-02-020
TRANSISTOR
NSN, MFG P/N
5961011508671
NSN
5961-01-150-8671
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV INFORMATION SYSTEMS - GERMANTOWN
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.25 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 90.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
VA1136
TRANSISTOR
NSN, MFG P/N
5961011508671
NSN
5961-01-150-8671
MFG
ECKERT & ZIEGLER ISOTOPE PRODUCTS INC. DBA ISOTOPE PRODUCTS LABORATORIES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.25 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 90.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
14645
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011508672
NSN
5961-01-150-8672
MFG
ELECTRONIC RESEARCH ASSOCIATES INC TRANSPAC POWER SUPPLY DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
D75
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011508673
NSN
5961-01-150-8673
MFG
QUANTA SYSTEMS CORP DBA DATA-CONTROL SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G830
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011508673
NSN
5961-01-150-8673
MFG
ITT SEMICONDUCTORS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
8792075-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011508674
NSN
5961-01-150-8674
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS AUTOMATED SPARES
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
GSV101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011508674
NSN
5961-01-150-8674
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
48 203-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011508675
NSN
5961-01-150-8675
48 203-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011508675
NSN
5961-01-150-8675
MFG
ROCKWELL COLLINS DEUTSCHLAND GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 53.70 AMPERES MAXIMUM PEAK PULSE CURRENT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
7030040-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011508675
NSN
5961-01-150-8675
MFG
ELECTRODYNAMICS INC. DBA L-3 COMMUNICATIONS ELECTRODYNAMICS
Description
CURRENT RATING PER CHARACTERISTIC: 53.70 AMPERES MAXIMUM PEAK PULSE CURRENT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
950044-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011508675
NSN
5961-01-150-8675
950044-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011508675
NSN
5961-01-150-8675
MFG
DATAMETRICS CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 53.70 AMPERES MAXIMUM PEAK PULSE CURRENT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
CD3027
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011508675
NSN
5961-01-150-8675
MFG
VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 53.70 AMPERES MAXIMUM PEAK PULSE CURRENT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
SAB5.0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011508675
NSN
5961-01-150-8675
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 53.70 AMPERES MAXIMUM PEAK PULSE CURRENT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
TVS505
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011508675
NSN
5961-01-150-8675
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 53.70 AMPERES MAXIMUM PEAK PULSE CURRENT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
SAB12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011508676
NSN
5961-01-150-8676
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE SILVER
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
TVS512
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011508676
NSN
5961-01-150-8676
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE SILVER
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD