My Quote Request
5961-01-155-7823
20 Products
LO3290
TRANSISTOR
NSN, MFG P/N
5961011557823
NSN
5961-01-155-7823
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: KGU327
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 06RP6
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO3290; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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2N989
TRANSISTOR
NSN, MFG P/N
5961011557824
NSN
5961-01-155-7824
MFG
SOLID STATE DEVICES INC.
Description
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR-TO-EMITTER, RESISTANCE BETWEEN BASE AND EMITTER AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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SM-B-416405
TRANSISTOR
NSN, MFG P/N
5961011557824
NSN
5961-01-155-7824
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR-TO-EMITTER, RESISTANCE BETWEEN BASE AND EMITTER AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
SMB416405
TRANSISTOR
NSN, MFG P/N
5961011557824
NSN
5961-01-155-7824
MFG
NAVAL INVENTORY CONTROL POINT MECHANICSBURG
Description
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR-TO-EMITTER, RESISTANCE BETWEEN BASE AND EMITTER AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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104765-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011557827
NSN
5961-01-155-7827
MFG
EDO CORPORATION DBA EDO NAVAL COMMAND AND SONAR SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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CND-2083
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011557827
NSN
5961-01-155-7827
MFG
C O D I CORP DBA CODI SEMICONDUCTOR INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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NOD-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011557827
NSN
5961-01-155-7827
MFG
SOLITRON DEVICES INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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2887706-3
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011557829
NSN
5961-01-155-7829
2887706-3
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011557829
NSN
5961-01-155-7829
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 1.20 AMPERES MAXIMUM FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 0.874 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.068 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 BANANA PLUG AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
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78-5602
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011557829
NSN
5961-01-155-7829
78-5602
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011557829
NSN
5961-01-155-7829
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 1.20 AMPERES MAXIMUM FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 0.874 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.068 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 BANANA PLUG AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
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T507127064AA-12
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011557829
NSN
5961-01-155-7829
T507127064AA-12
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011557829
NSN
5961-01-155-7829
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.20 AMPERES MAXIMUM FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 0.874 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.068 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 BANANA PLUG AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
280-20032-732
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011558113
NSN
5961-01-155-8113
280-20032-732
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011558113
NSN
5961-01-155-8113
MFG
THE BOEING COMPANY DBA BOEING
Description
III END ITEM IDENTIFICATION: LGM 30
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20032-732
SPEC/STD CONTROLLING DATA:
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SZG471H732
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011558113
NSN
5961-01-155-8113
SZG471H732
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011558113
NSN
5961-01-155-8113
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: LGM 30
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20032-732
SPEC/STD CONTROLLING DATA:
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5013390
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011558143
NSN
5961-01-155-8143
MFG
NAVAL SEA SYSTEMS COMMAND
Description
DESIGN CONTROL REFERENCE: Z5-1
MANUFACTURERS CODE: 81071
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
OVERALL LENGTH: 0.205 INCHES NOMINAL
TERMINAL CIRCLE DIAMETER: 0.028 INCHES NOMINAL
TERMINAL LENGTH: 1.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
Z5-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011558143
NSN
5961-01-155-8143
MFG
JAPLAR GROUP INC. DBA JAPLAR SCHAUER
Description
DESIGN CONTROL REFERENCE: Z5-1
MANUFACTURERS CODE: 81071
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES NOMINAL
OVERALL LENGTH: 0.205 INCHES NOMINAL
TERMINAL CIRCLE DIAMETER: 0.028 INCHES NOMINAL
TERMINAL LENGTH: 1.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
508C697G03
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011558618
NSN
5961-01-155-8618
508C697G03
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011558618
NSN
5961-01-155-8618
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
508C697G13
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011558618
NSN
5961-01-155-8618
508C697G13
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011558618
NSN
5961-01-155-8618
MFG
POWEREX INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
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10777556-1
TRANSISTOR
NSN, MFG P/N
5961011558763
NSN
5961-01-155-8763
MFG
BALLISTIC MISSILE DEFENSE SYSTEMS COMMAND
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 5840-01-141-4378
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.225 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
Related Searches:
RF3023R
TRANSISTOR
NSN, MFG P/N
5961011558763
NSN
5961-01-155-8763
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 5840-01-141-4378
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.225 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
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SD1853-06H
TRANSISTOR
NSN, MFG P/N
5961011558763
NSN
5961-01-155-8763
MFG
MICROSEMI CORP. - MONTGOMERYVILLE
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 5840-01-141-4378
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.225 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
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TRW52601
TRANSISTOR
NSN, MFG P/N
5961011558763
NSN
5961-01-155-8763
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 5840-01-141-4378
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.225 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON