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5961-01-170-6424
20 Products
FS101-1000-105N
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011706424
NSN
5961-01-170-6424
FS101-1000-105N
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011706424
NSN
5961-01-170-6424
MFG
BAE SYSTEMS INTEGRATED SYSTEM TECHNO LOGIES LTD
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.190 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS MAXIMUM PEAK ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 128.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
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67261-0001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011707623
NSN
5961-01-170-7623
67261-0001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011707623
NSN
5961-01-170-7623
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND BURN IN
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.760 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.65 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.120 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
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SHQ556H
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011707623
NSN
5961-01-170-7623
SHQ556H
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011707623
NSN
5961-01-170-7623
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND BURN IN
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.760 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.65 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.120 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
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SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011707686
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5961-01-170-7686
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -0.2 TO 0.2
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3279892
SEMICONDUCTOR DEVICE,DIODE
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5961-01-170-7687
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
SEMICONDUCTOR DEVICE,DIODE
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032289-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
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5961011707720
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RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011707720
NSN
5961-01-170-7720
MFG
CELAB LTD
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
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SEMICONDUCTOR DEVICE ASSEMBLY
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5961011708283
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5961-01-170-8283
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SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011708283
NSN
5961-01-170-8283
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
MAJOR COMPONENTS: RECTIFIER DIODES 6
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5961011708283
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5961-01-170-8283
MFG
SOLID STATE DEVICES INC.
Description
MAJOR COMPONENTS: RECTIFIER DIODES 6
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2N6072A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011709596
NSN
5961-01-170-9596
2N6072A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011709596
NSN
5961-01-170-9596
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR AND 110.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.439 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS NOMINAL PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
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KU122304B
THYSISTOR
NSN, MFG P/N
5961011710349
NSN
5961-01-171-0349
MFG
TELEPHONICS CORP/PRD INSTRUMENTS
Description
THYSISTOR
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ZTX213B
TRANSISTOR
NSN, MFG P/N
5961011710728
NSN
5961-01-171-0728
MFG
FERRANTI ELECTRIC INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC AND 0.50 MILLIAMPERES NOMINAL BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-39
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
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TRANSISTOR
NSN, MFG P/N
5961011710729
NSN
5961-01-171-0729
MFG
THALES OPTRONIQUE SA
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
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SDT5054
TRANSISTOR
NSN, MFG P/N
5961011710729
NSN
5961-01-171-0729
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
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NSN, MFG P/N
5961011710730
NSN
5961-01-171-0730
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 30377
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 20207
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL TEST FEATURES: TESTED PER BASE TEN SYSTEMS DWG 20207
TERMINAL CIRCLE DIAMETER: 0.034 INCHES MAXIMUM
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011710730
NSN
5961-01-171-0730
MFG
SMITHS AEROSPACE INC. ELECTRONIC SYSTEMS-GRAND RAPIDS
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 30377
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 20207
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL TEST FEATURES: TESTED PER BASE TEN SYSTEMS DWG 20207
TERMINAL CIRCLE DIAMETER: 0.034 INCHES MAXIMUM
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
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SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011711498
NSN
5961-01-171-1498
MFG
GENERAL DYNAMICS LAND SYSTEMS INC . DBA WOODBRIDGE TECHNICAL CENTER DIV GENERAL DYNAMICS LAND SYSTEMS INC-WOODBRIDGE TECHNICAL CENTE
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, AVERAGE AND 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
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SEMICONDUCTOR DEVICE,DIODE
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5961011711498
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011711498
NSN
5961-01-171-1498
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, AVERAGE AND 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
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5961011711680
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011711680
NSN
5961-01-171-1680
MFG
WESTINGHOUSE ELECTRIC CORP MEDIUM AC MOTOR AND GEARING DIV
Description
RECTIFIER,SEMICONDUCTOR DEVICE
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75566-0001
TRANSISTOR
NSN, MFG P/N
5961011711756
NSN
5961-01-171-1756
MFG
NARCO SCIENTIFIC INC
Description
TRANSISTOR
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092450945
SEMICONDUCTOR DEVICE,DIODE
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5961011711758
NSN
5961-01-171-1758
MFG
CALLANAN CO
Description
SEMICONDUCTOR DEVICE,DIODE