My Quote Request
5961-01-177-3601
20 Products
SM-C-800829-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011773601
NSN
5961-01-177-3601
SM-C-800829-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011773601
NSN
5961-01-177-3601
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES REPETITIVE PEAK FORWARD CURRENT AND 30.00 AMPERES PEAK REVERSE SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 REVERSE VOLTAGE, TOTAL RMS AND 100.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.450 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
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14BB104
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011774018
NSN
5961-01-177-4018
MFG
SOLITRON DEVICES INC.
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 1 ALL TRANSISTOR
MOUNTING METHOD: THREADED STUD ALL TRANSISTOR
NOMINAL THREAD SIZE: 0.250 INCHES ALL TRANSISTOR
OVERALL LENGTH: 1.062 INCHES MINIMUM AND 1.245 INCHES MAXIMUM ALL TRANSISTOR
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG ALL TRANSISTOR
THREAD SERIES DESIGNATOR: UNF ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR
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6086661-1
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011774018
NSN
5961-01-177-4018
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 1 ALL TRANSISTOR
MOUNTING METHOD: THREADED STUD ALL TRANSISTOR
NOMINAL THREAD SIZE: 0.250 INCHES ALL TRANSISTOR
OVERALL LENGTH: 1.062 INCHES MINIMUM AND 1.245 INCHES MAXIMUM ALL TRANSISTOR
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG ALL TRANSISTOR
THREAD SERIES DESIGNATOR: UNF ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR
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D20032A
TRANSISTOR
NSN, MFG P/N
5961011774284
NSN
5961-01-177-4284
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV INFORMATION SYSTEMS - GERMANTOWN
Description
III END ITEM IDENTIFICATION: F-16 AIRCRAFT
SPECIAL FEATURES: SELECTED ITEM DRAWING
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VQ1001P
TRANSISTOR
NSN, MFG P/N
5961011774284
NSN
5961-01-177-4284
MFG
SUPERTEX INC.
Description
III END ITEM IDENTIFICATION: F-16 AIRCRAFT
SPECIAL FEATURES: SELECTED ITEM DRAWING
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VQ1001P/750
TRANSISTOR
NSN, MFG P/N
5961011774284
NSN
5961-01-177-4284
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
III END ITEM IDENTIFICATION: F-16 AIRCRAFT
SPECIAL FEATURES: SELECTED ITEM DRAWING
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D20020A
TRANSISTOR
NSN, MFG P/N
5961011774285
NSN
5961-01-177-4285
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV INFORMATION SYSTEMS - GERMANTOWN
Description
III END ITEM IDENTIFICATION: F-16 AIRCRAFT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.360 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
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D25130A-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011774287
NSN
5961-01-177-4287
D25130A-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011774287
NSN
5961-01-177-4287
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV INFORMATION SYSTEMS - GERMANTOWN
Description
III END ITEM IDENTIFICATION: F-16 AIRCRAFT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.177 INCHES MINIMUM AND 1.197 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, DC
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HES514Q
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011774287
NSN
5961-01-177-4287
MFG
MICRO QUALITY SEMICONDUCTOR INC SUB OF MICROSEMI CORP
Description
III END ITEM IDENTIFICATION: F-16 AIRCRAFT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.177 INCHES MINIMUM AND 1.197 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, DC
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UES 2603
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011774287
NSN
5961-01-177-4287
MFG
MICRO USPD INC
Description
III END ITEM IDENTIFICATION: F-16 AIRCRAFT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.177 INCHES MINIMUM AND 1.197 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, DC
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16E1039-147
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011774288
NSN
5961-01-177-4288
16E1039-147
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011774288
NSN
5961-01-177-4288
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV LOCKHEED MARTIN AERONAUTICS COMPANY
Description
III END ITEM IDENTIFICATION: F-16 ACFT
MAJOR COMPONENTS: PRINTED WIRING BD 1,DIODES 2
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12079-20E-009
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011774550
NSN
5961-01-177-4550
12079-20E-009
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011774550
NSN
5961-01-177-4550
MFG
AMPHENOL OPTIMIZE MANUFACTURING CO . DIV AMPHENOL AEROSPACE OPERATIONS
Description
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.310 INCHES MAXIMUM
OVERALL LENGTH: 1.750 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
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591857-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011774550
NSN
5961-01-177-4550
591857-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011774550
NSN
5961-01-177-4550
MFG
TYCO ELECTRONICS CORPORATION
Description
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.310 INCHES MAXIMUM
OVERALL LENGTH: 1.750 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
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FBMZ168
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011774551
NSN
5961-01-177-4551
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 76.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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588101-13
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011774552
NSN
5961-01-177-4552
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
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588101-9
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011774553
NSN
5961-01-177-4553
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
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VH248X
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011774554
NSN
5961-01-177-4554
VH248X
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011774554
NSN
5961-01-177-4554
MFG
MICRO QUALITY SEMICONDUCTOR INC SUB OF MICROSEMI CORP
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
OPERATING TEMP RANGE: -50.0 TO 135.0 DEG CELSIUS
OVERALL HEIGHT: 0.195 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.590 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
OVERALL WIDTH: 0.590 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
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201003-004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011774556
NSN
5961-01-177-4556
201003-004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011774556
NSN
5961-01-177-4556
MFG
C&D TECHNOLOGIES INC. DBA DYNASTY DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
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6086662-1
TRANSISTOR
NSN, MFG P/N
5961011774717
NSN
5961-01-177-4717
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-111
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.218 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 37.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 WIRE HOOK
THREAD SERIES DESIGNATOR: UNF
TRANSFER RATIO: 40.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 120.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
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91SH115
TRANSISTOR
NSN, MFG P/N
5961011774717
NSN
5961-01-177-4717
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-111
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.218 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 37.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG AND 1 WIRE HOOK
THREAD SERIES DESIGNATOR: UNF
TRANSFER RATIO: 40.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 120.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC