My Quote Request
5961-01-182-3465
20 Products
SG2167
TRANSISTOR
NSN, MFG P/N
5961011823465
NSN
5961-01-182-3465
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL BASE CURRENT, DC
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-46
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.565 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
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SA4067
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011821793
NSN
5961-01-182-1793
SA4067
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011821793
NSN
5961-01-182-1793
MFG
SEMTECH CORPORATION
Description
SPECIAL FEATURES: THREE PHASE RECTIFIER;300 VDC;25 ADC;150 DEGREE CELSIUS MAX OPERATING TEMP;2.250 IN. LG;0.813 IN. MAX H;STORAGE TEMP RANGE:M55.0 TO 150.0 DEG C
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452-800021
TRANSISTOR
NSN, MFG P/N
5961011822581
NSN
5961-01-182-2581
MFG
RAYTHEON COMPANY DBA RAYTHEON DIV MISSILE SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 40.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 150.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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66276
TRANSISTOR
NSN, MFG P/N
5961011822581
NSN
5961-01-182-2581
MFG
INTERSIL CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 40.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 150.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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0N242368
TRANSISTOR
NSN, MFG P/N
5961011822582
NSN
5961-01-182-2582
MFG
NATIONAL SECURITY AGENCY
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.392 INCHES MAXIMUM
OVERALL LENGTH: 1.575 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED
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PMD-20K-150
TRANSISTOR
NSN, MFG P/N
5961011822582
NSN
5961-01-182-2582
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.392 INCHES MAXIMUM
OVERALL LENGTH: 1.575 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED
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3130357G001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011822583
NSN
5961-01-182-2583
3130357G001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011822583
NSN
5961-01-182-2583
MFG
ITT CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4I
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.192 INCHES
OVERALL LENGTH: 1.173 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 1.5 MAXIMUM FORWARD VOLTAGE, DC
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SVD450-12I
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011822583
NSN
5961-01-182-2583
SVD450-12I
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011822583
NSN
5961-01-182-2583
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4I
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.192 INCHES
OVERALL LENGTH: 1.173 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 1.5 MAXIMUM FORWARD VOLTAGE, DC
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12-679126-04
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011822585
NSN
5961-01-182-2585
12-679126-04
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011822585
NSN
5961-01-182-2585
MFG
EMERSON ELECTRIC CO COMPUTER POWER DIV
Description
CURRENT RATING PER CHARACTERISTIC: 315.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.600 INCHES NOMINAL
OVERALL LENGTH: 0.520 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 8.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE
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C-384SX135
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011822585
NSN
5961-01-182-2585
C-384SX135
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011822585
NSN
5961-01-182-2585
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 315.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.600 INCHES NOMINAL
OVERALL LENGTH: 0.520 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 8.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE
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SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011822585
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5961-01-182-2585
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SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011822585
NSN
5961-01-182-2585
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 315.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.600 INCHES NOMINAL
OVERALL LENGTH: 0.520 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 8.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE
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12-679130-11
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011822586
NSN
5961-01-182-2586
12-679130-11
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011822586
NSN
5961-01-182-2586
MFG
EMERSON ELECTRIC CO COMPUTER POWER DIV
Description
CURRENT RATING PER CHARACTERISTIC: 750.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.250 INCHES NOMINAL
OVERALL LENGTH: 1.040 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 20.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE
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SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011822586
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5961-01-182-2586
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SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011822586
NSN
5961-01-182-2586
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 750.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.250 INCHES NOMINAL
OVERALL LENGTH: 1.040 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 20.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE
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SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011822586
NSN
5961-01-182-2586
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SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011822586
NSN
5961-01-182-2586
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 750.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.250 INCHES NOMINAL
OVERALL LENGTH: 1.040 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 20.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE
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SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011822586
NSN
5961-01-182-2586
T72012504HF
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011822586
NSN
5961-01-182-2586
MFG
WESTINGHOUSE ELECTRIC CORP POWER CIRCUIT BREAKER DIV INDUSTRIAL CERAMICS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 750.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.250 INCHES NOMINAL
OVERALL LENGTH: 1.040 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 20.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE
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T720125504HF
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011822586
NSN
5961-01-182-2586
T720125504HF
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011822586
NSN
5961-01-182-2586
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 750.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.250 INCHES NOMINAL
OVERALL LENGTH: 1.040 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 20.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE
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RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011822744
NSN
5961-01-182-2744
D-5
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011822744
NSN
5961-01-182-2744
MFG
STANDARD MOTOR PRODUCTS
Description
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
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20-01011-001
TRANSISTOR
NSN, MFG P/N
5961011823083
NSN
5961-01-182-3083
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 0.80 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
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2N2222A
TRANSISTOR
NSN, MFG P/N
5961011823083
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TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 0.80 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
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2500263-3
TRANSISTOR
NSN, MFG P/N
5961011823465
NSN
5961-01-182-3465
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL BASE CURRENT, DC
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-46
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.565 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD