My Quote Request
5961-01-182-6810
20 Products
MC510351
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011826810
NSN
5961-01-182-6810
MFG
MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-353-6579 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
HA20
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011826810
NSN
5961-01-182-6810
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-353-6579 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
M20FG
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011826810
NSN
5961-01-182-6810
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-353-6579 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2000.0 MAXIMUM REVERSE VOLTAGE, PEAK
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110927
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011826811
NSN
5961-01-182-6811
110927
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011826811
NSN
5961-01-182-6811
MFG
LINDE LIFT TRUCK CORP.
Description
CURRENT RATING PER CHARACTERISTIC: 63.00 AMPERES MINIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.018 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 3 UNINSULATED WIRE LEAD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MINIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
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125556
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011826811
NSN
5961-01-182-6811
125556
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011826811
NSN
5961-01-182-6811
MFG
SCHAEFF NAMCO INC
Description
CURRENT RATING PER CHARACTERISTIC: 63.00 AMPERES MINIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.018 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 3 UNINSULATED WIRE LEAD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MINIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
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259A2135G1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011826811
NSN
5961-01-182-6811
259A2135G1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011826811
NSN
5961-01-182-6811
MFG
GENERAL ELECTRIC CO GE DRIVE SYSTEMS GOVERNMENT BUSINESS OPN
Description
CURRENT RATING PER CHARACTERISTIC: 63.00 AMPERES MINIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.018 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 3 UNINSULATED WIRE LEAD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MINIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
271905
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011826811
NSN
5961-01-182-6811
271905
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011826811
NSN
5961-01-182-6811
MFG
NACCO MATERIALS HANDLING GROUP INC DBA HYSTER
Description
CURRENT RATING PER CHARACTERISTIC: 63.00 AMPERES MINIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.018 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 3 UNINSULATED WIRE LEAD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MINIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
5169138-02
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011826811
NSN
5961-01-182-6811
5169138-02
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011826811
NSN
5961-01-182-6811
MFG
NACCO MATERIALS HANDLING GROUP INC DBA YALE MATERIALS HANDLING DIV NACCO MATERIALS HANDLING GROUP INC.
Description
CURRENT RATING PER CHARACTERISTIC: 63.00 AMPERES MINIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.018 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 3 UNINSULATED WIRE LEAD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MINIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
ADMS12-0002
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011827636
NSN
5961-01-182-7636
ADMS12-0002
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011827636
NSN
5961-01-182-7636
MFG
CRISTEK INTERCONNECTS INC.
Description
III END ITEM IDENTIFICATION: APACHE HELICOPTER
MAJOR COMPONENTS: HOUSING 1, DIODE 5
OVERALL HEIGHT: 1.170 INCHES NOMINAL
OVERALL LENGTH: 1.020 INCHES NOMINAL
OVERALL WIDTH: 0.672 INCHES NOMINAL
Related Searches:
CTJ-420E016-513
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011827636
NSN
5961-01-182-7636
CTJ-420E016-513
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011827636
NSN
5961-01-182-7636
MFG
DEUTSCH ENGINEERED CONNECTING DEVICES INC DBA DEFENSE AEROSPACE OPERATIONS DIV DEFENSE AEROSPACE OPERATIONS
Description
III END ITEM IDENTIFICATION: APACHE HELICOPTER
MAJOR COMPONENTS: HOUSING 1, DIODE 5
OVERALL HEIGHT: 1.170 INCHES NOMINAL
OVERALL LENGTH: 1.020 INCHES NOMINAL
OVERALL WIDTH: 0.672 INCHES NOMINAL
Related Searches:
HS4790-03
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011827636
NSN
5961-01-182-7636
HS4790-03
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011827636
NSN
5961-01-182-7636
MFG
BOEING COMPANY THE DIV DEFENSE SPACE & SECURITY
Description
III END ITEM IDENTIFICATION: APACHE HELICOPTER
MAJOR COMPONENTS: HOUSING 1, DIODE 5
OVERALL HEIGHT: 1.170 INCHES NOMINAL
OVERALL LENGTH: 1.020 INCHES NOMINAL
OVERALL WIDTH: 0.672 INCHES NOMINAL
Related Searches:
HS4790-3
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011827636
NSN
5961-01-182-7636
HS4790-3
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011827636
NSN
5961-01-182-7636
MFG
MCDONNELL DOUGLAS HELICOPTER CO INC
Description
III END ITEM IDENTIFICATION: APACHE HELICOPTER
MAJOR COMPONENTS: HOUSING 1, DIODE 5
OVERALL HEIGHT: 1.170 INCHES NOMINAL
OVERALL LENGTH: 1.020 INCHES NOMINAL
OVERALL WIDTH: 0.672 INCHES NOMINAL
Related Searches:
JANTX1N3613
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011827636
NSN
5961-01-182-7636
JANTX1N3613
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011827636
NSN
5961-01-182-7636
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
III END ITEM IDENTIFICATION: APACHE HELICOPTER
MAJOR COMPONENTS: HOUSING 1, DIODE 5
OVERALL HEIGHT: 1.170 INCHES NOMINAL
OVERALL LENGTH: 1.020 INCHES NOMINAL
OVERALL WIDTH: 0.672 INCHES NOMINAL
Related Searches:
5169667-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011828222
NSN
5961-01-182-8222
5169667-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011828222
NSN
5961-01-182-8222
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND BURN IN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 53711-5169667 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, DC AND 30.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
584R241H03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011828222
NSN
5961-01-182-8222
584R241H03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011828222
NSN
5961-01-182-8222
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND BURN IN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 53711-5169667 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, DC AND 30.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
DQFJ104
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011828222
NSN
5961-01-182-8222
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND BURN IN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 53711-5169667 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, DC AND 30.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
0N442611-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011828223
NSN
5961-01-182-8223
0N442611-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011828223
NSN
5961-01-182-8223
MFG
NATIONAL SECURITY AGENCY
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: TELETYPEWRITER SET AN/UGC-136AX
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1-001-0402-0010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011828223
NSN
5961-01-182-8223
1-001-0402-0010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011828223
NSN
5961-01-182-8223
MFG
AVIONIC INSTRUMENTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: TELETYPEWRITER SET AN/UGC-136AX
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1901-1108
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011828223
NSN
5961-01-182-8223
MFG
HEWLETT PACKARD CO
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: TELETYPEWRITER SET AN/UGC-136AX
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
20-01027-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011828223
NSN
5961-01-182-8223
20-01027-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011828223
NSN
5961-01-182-8223
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: TELETYPEWRITER SET AN/UGC-136AX
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK