My Quote Request
5961-01-187-0789
20 Products
SDA150-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011870789
NSN
5961-01-187-0789
MFG
SOLID STATE DEVICES INC.
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 3.500 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
READINESS SPARE PART ITEM
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011870077
NSN
5961-01-187-0077
READINESS SPARE PART ITEM
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011870077
NSN
5961-01-187-0077
MFG
DEFENSE LOGISTICS AGENCY DIRECTORATE OF MEDICAL MATERIEL DEFENSE SUPPLY CENTER PHILADELPHIA
Description
SPECIAL FEATURES: USED WITH RESPIRATOR,MOBILE; 6630011332606; FSCM 49315; PART NO. MA-1 MODIFIED
Related Searches:
720605-14
SEMICONDUCTOR
NSN, MFG P/N
5961011870309
NSN
5961-01-187-0309
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR
Related Searches:
SA8854
SEMICONDUCTOR
NSN, MFG P/N
5961011870309
NSN
5961-01-187-0309
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
SEMICONDUCTOR
Related Searches:
723084-41
TRANSISTOR
NSN, MFG P/N
5961011870541
NSN
5961-01-187-0541
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
7899607
TRANSISTOR
NSN, MFG P/N
5961011870541
NSN
5961-01-187-0541
MFG
GENERAL MOTORS CORP DELCO ELECTRONICS DIV
Description
TRANSISTOR
Related Searches:
723097-18
TRANSISTOR
NSN, MFG P/N
5961011870542
NSN
5961-01-187-0542
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
C378PDX28
TRANSISTOR
NSN, MFG P/N
5961011870542
NSN
5961-01-187-0542
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
TRANSISTOR
Related Searches:
44994-5
TRANSISTOR
NSN, MFG P/N
5961011870543
NSN
5961-01-187-0543
MFG
HAMILTON STANDARD ELECTRONICS SYSTEMS INC TELE-DYNAMICS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-60
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.935 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
200085-2
TRANSISTOR
NSN, MFG P/N
5961011870544
NSN
5961-01-187-0544
MFG
ARNOUX CORP DYNAMIC SYSTEM ELECTRONICS DIV
Description
TRANSISTOR
Related Searches:
5MSD1W12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011870546
NSN
5961-01-187-0546
MFG
SOLITRON DEVICES INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
852423
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011870546
NSN
5961-01-187-0546
MFG
L-3 COMMUNICATIONS CORPORATION DIV LINK SIMULATION & TRAINING DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1855-0222
TRANSISTOR
NSN, MFG P/N
5961011870785
NSN
5961-01-187-0785
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES NOMINAL ZERO-GATE-VOLTAGE DRAIN CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
803549-1
TRANSISTOR
NSN, MFG P/N
5961011870787
NSN
5961-01-187-0787
MFG
RAYTHEON COMPANY
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND BURN IN
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.312 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 UNINSULATED WIRE LEAD
Related Searches:
9324-013056
TRANSISTOR
NSN, MFG P/N
5961011870788
NSN
5961-01-187-0788
MFG
GMC-I MESSTECHNIK GMBH
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INTERNAL CONFIGURATION: FIELD EFFECT
SEMICONDUCTOR MATERIAL: SILICON CARBIDE
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
AM0108527
TRANSISTOR
NSN, MFG P/N
5961011870788
NSN
5961-01-187-0788
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INTERNAL CONFIGURATION: FIELD EFFECT
SEMICONDUCTOR MATERIAL: SILICON CARBIDE
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
BF245A
TRANSISTOR
NSN, MFG P/N
5961011870788
NSN
5961-01-187-0788
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INTERNAL CONFIGURATION: FIELD EFFECT
SEMICONDUCTOR MATERIAL: SILICON CARBIDE
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
533167-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011870789
NSN
5961-01-187-0789
MFG
RAYTHEON COMPANY
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 3.500 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
RA400
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011870789
NSN
5961-01-187-0789
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 3.500 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SA8446
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011870789
NSN
5961-01-187-0789
MFG
SEMTECH CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 3.500 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20000.0 MAXIMUM REVERSE VOLTAGE, PEAK