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5961-01-189-5476

20 Products

0N303489-1

TRANSISTOR

NSN, MFG P/N

5961011895476

NSN

5961-01-189-5476

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0N303489-1

TRANSISTOR

NSN, MFG P/N

5961011895476

NSN

5961-01-189-5476

MFG

NATIONAL SECURITY AGENCY

Description

III END ITEM IDENTIFICATION: KG-81 PROD
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.573 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SELECTED ITEM DRAWING;SUGGESTED SOURCE;RCA CORP(0273J) SIMILAR TO 2N5672EQUIVALENT JEDEC OUTLINE IS THE TO-3. 3. DIMENSIONS ARE IN INCHES.MIL STANDARD JANTX2N5672,NPN,SILICON POWER TRNSISTOR,MIL SPECIFICATIONS: MIL-S-19500/488 SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 120.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
~1: DEVICES,TRANISTOR,NPN,SILCON,HIGH POWER,TYPE 2N5672,JANTX. STORAGE TIME PARAMETER (TS) MEASUREMENT LIMITS OF TABLE 1. MARKING: PARTS SHALL BE MARKED WITH THE FOLLOWING MINIMUM INFORMATION: A. PART NUMBER,0N303489-1,B. FSCM CODE 98230,C. DATE CODE,D.
~2: SERIAL NUMBER,CONTRACT NO. MDA904-80-C-0753. SUGGESTED SOURCE OF SUPPLY. RCA CORP. RT. NO. 202 SOMMERVILLE,NJ 08876 CODE IDENT: 0273J,ITEM I.D. OF SIMILAR COMMERCIAL TYPE 2N5672

10673229-011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011892492

NSN

5961-01-189-2492

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10673229-011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011892492

NSN

5961-01-189-2492

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 14.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES NOMINAL
OVERALL LENGTH: 0.371 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 18876-10673229 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

2902745-3

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011893340

NSN

5961-01-189-3340

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2902745-3

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011893340

NSN

5961-01-189-3340

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 0.25 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 10.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7500.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 2.130 INCHES NOMINAL
OVERALL HEIGHT: 0.580 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 TURRET

SA3634

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011893340

NSN

5961-01-189-3340

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SA3634

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011893340

NSN

5961-01-189-3340

MFG

SEMTECH CORPORATION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 0.25 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 10.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7500.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 2.130 INCHES NOMINAL
OVERALL HEIGHT: 0.580 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 TURRET

SDA296-3

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011893340

NSN

5961-01-189-3340

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SDA296-3

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011893340

NSN

5961-01-189-3340

MFG

SOLID STATE DEVICES INC.

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 0.25 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 10.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7500.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 2.130 INCHES NOMINAL
OVERALL HEIGHT: 0.580 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 TURRET

B70-28

TRANSISTOR

NSN, MFG P/N

5961011894123

NSN

5961-01-189-4123

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B70-28

TRANSISTOR

NSN, MFG P/N

5961011894123

NSN

5961-01-189-4123

MFG

ACRIAN INC

2N3442

TRANSISTOR

NSN, MFG P/N

5961011894124

NSN

5961-01-189-4124

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2N3442

TRANSISTOR

NSN, MFG P/N

5961011894124

NSN

5961-01-189-4124

MFG

HARRIS CORP SEMICONDUCTOR SECTOR

Description

III END ITEM IDENTIFICATION: F-111D AIRCRAFT
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3442
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/370
OVERALL LENGTH: 0.350 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JANTX2N3442 TRANSISTOR SELECTED FOR FWD CURRENT TRANSFER RATIO AND SMALL-SIGNAL SHORT-CIRCUIT FWD CURRENT TRANSFER RATIO
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN

958-091-0001

TRANSISTOR

NSN, MFG P/N

5961011894124

NSN

5961-01-189-4124

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958-091-0001

TRANSISTOR

NSN, MFG P/N

5961011894124

NSN

5961-01-189-4124

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS

Description

III END ITEM IDENTIFICATION: F-111D AIRCRAFT
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3442
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/370
OVERALL LENGTH: 0.350 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JANTX2N3442 TRANSISTOR SELECTED FOR FWD CURRENT TRANSFER RATIO AND SMALL-SIGNAL SHORT-CIRCUIT FWD CURRENT TRANSFER RATIO
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN

JANTX2N3442

TRANSISTOR

NSN, MFG P/N

5961011894124

NSN

5961-01-189-4124

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JANTX2N3442

TRANSISTOR

NSN, MFG P/N

5961011894124

NSN

5961-01-189-4124

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

III END ITEM IDENTIFICATION: F-111D AIRCRAFT
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3442
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/370
OVERALL LENGTH: 0.350 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JANTX2N3442 TRANSISTOR SELECTED FOR FWD CURRENT TRANSFER RATIO AND SMALL-SIGNAL SHORT-CIRCUIT FWD CURRENT TRANSFER RATIO
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN

479-0011-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011894125

NSN

5961-01-189-4125

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479-0011-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011894125

NSN

5961-01-189-4125

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

III END ITEM IDENTIFICATION: MISSILE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
SEMICONDUCTOR MATERIAL: SILICON

DT2013

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011894125

NSN

5961-01-189-4125

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DT2013

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011894125

NSN

5961-01-189-4125

MFG

COMPENSATED DEVICES INC

Description

III END ITEM IDENTIFICATION: MISSILE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
SEMICONDUCTOR MATERIAL: SILICON

40-666-2394

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011894129

NSN

5961-01-189-4129

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40-666-2394

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011894129

NSN

5961-01-189-4129

MFG

GE AVIATION BISHOPS CLEEVE CHELTENHAM

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.438 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

AG0869930

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011894129

NSN

5961-01-189-4129

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AG0869930

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011894129

NSN

5961-01-189-4129

MFG

ROHDE & SCHWARZ GMBH & CO. KG

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.438 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

MBR2540

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011894129

NSN

5961-01-189-4129

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MBR2540

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011894129

NSN

5961-01-189-4129

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.438 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

SM-C-955514

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961011894487

NSN

5961-01-189-4487

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SM-C-955514

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961011894487

NSN

5961-01-189-4487

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
III END ITEM IDENTIFICATION: XM23 COMPUTER BALLISTICS MORTAR
SPECIAL FEATURES: SET OF 4 TRANSISTORS IN A 14 PIN FLAT-PACK(MOTOROLA CALLS THE CASE;607-04 STYLE 1)

66-393-329

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011895094

NSN

5961-01-189-5094

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66-393-329

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011895094

NSN

5961-01-189-5094

MFG

COMMUNICATIONS & POWER INDUSTRIES INC. DBA SATCOM DIVISION DIV SATCOM DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 350.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3000.0 MAXIMUM REVERSE VOLTAGE, PEAK

RG300A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011895094

NSN

5961-01-189-5094

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RG300A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011895094

NSN

5961-01-189-5094

MFG

ELECTRONIC DEVICES INC DBA E D I

Description

CURRENT RATING PER CHARACTERISTIC: 350.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3000.0 MAXIMUM REVERSE VOLTAGE, PEAK

JANTX1N6118A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011895143

NSN

5961-01-189-5143

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JANTX1N6118A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011895143

NSN

5961-01-189-5143

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6118A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/516 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 31.4 MINIMUM BREAKDOWN VOLTAGE, DC

2N6584

TRANSISTOR

NSN, MFG P/N

5961011895314

NSN

5961-01-189-5314

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2N6584

TRANSISTOR

NSN, MFG P/N

5961011895314

NSN

5961-01-189-5314

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 5.00 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE6663A PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 35.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 550.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 9.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 450.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

2N5625

TRANSISTOR

NSN, MFG P/N

5961011895315

NSN

5961-01-189-5315

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2N5625

TRANSISTOR

NSN, MFG P/N

5961011895315

NSN

5961-01-189-5315

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 3.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5981 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN