My Quote Request
5961-01-199-4280
20 Products
2710038-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011994280
NSN
5961-01-199-4280
2710038-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011994280
NSN
5961-01-199-4280
MFG
PHASE MATRIX INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
4807-03-0004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011994281
NSN
5961-01-199-4281
4807-03-0004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011994281
NSN
5961-01-199-4281
MFG
WAVETEK RF PRODUCTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM FORWARD VOLTAGE, DC
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34008-003
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011994282
NSN
5961-01-199-4282
34008-003
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011994282
NSN
5961-01-199-4282
MFG
DOVER DIVERSIFIED DE INC.
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
05G00050-0202
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011994304
NSN
5961-01-199-4304
05G00050-0202
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011994304
NSN
5961-01-199-4304
MFG
MAGNETEK INC INDUSTRIAL CONTROLS GROUP DIV DBA MAGNETEK
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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DD1115
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011994315
NSN
5961-01-199-4315
MFG
CONTINENTAL MICROWAVE AND TOOL CO. INC. DBA COBHAM SENSOR SYSTEMS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: METAL ALL SEMICONDUCTOR DEVICE DIODE
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352-0581-080
TRANSISTOR
NSN, MFG P/N
5961011994596
NSN
5961-01-199-4596
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.266 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.360 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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SJ7645
TRANSISTOR
NSN, MFG P/N
5961011994596
NSN
5961-01-199-4596
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.266 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.360 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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2139772G001
TRANSISTOR
NSN, MFG P/N
5961011995181
NSN
5961-01-199-5181
MFG
ITT CORPORATION
Description
III END ITEM IDENTIFICATION: AN/ALQ-117PM CM SET
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4710039
TRANSISTOR
NSN, MFG P/N
5961011995507
NSN
5961-01-199-5507
MFG
EIP MICROWAVE INC
Description
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
TERMINAL LENGTH: 0.531 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
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A8T4261-18
TRANSISTOR
NSN, MFG P/N
5961011995507
NSN
5961-01-199-5507
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
TERMINAL LENGTH: 0.531 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011995508
NSN
5961-01-199-5508
4803-02-0006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011995508
NSN
5961-01-199-5508
MFG
WAVETEK RF PRODUCTS INC
Description
SEMICONDUCTOR DEVICE,DIODE
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DKV6550B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011995508
NSN
5961-01-199-5508
MFG
SKYWORKS SOLUTIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
655-1119
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011995607
NSN
5961-01-199-5607
655-1119
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011995607
NSN
5961-01-199-5607
MFG
MICRO USPD INC
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.755 INCHES MAXIMUM
OVERALL WIDTH: 0.755 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 TURRET
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7845598P001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011995607
NSN
5961-01-199-5607
7845598P001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011995607
NSN
5961-01-199-5607
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.755 INCHES MAXIMUM
OVERALL WIDTH: 0.755 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 TURRET
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SCN-B-201
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011995607
NSN
5961-01-199-5607
SCN-B-201
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011995607
NSN
5961-01-199-5607
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.755 INCHES MAXIMUM
OVERALL WIDTH: 0.755 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
2710037
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011997018
NSN
5961-01-199-7018
MFG
EIP MICROWAVE INC
Description
CAPACITANCE RATING IN PICOFARADS: 0.2 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 0.02 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MINIMUM REVERSE VOLTAGE, DC
Related Searches:
SM-C-868948-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011997018
NSN
5961-01-199-7018
SM-C-868948-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011997018
NSN
5961-01-199-7018
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CAPACITANCE RATING IN PICOFARADS: 0.2 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 0.02 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MINIMUM REVERSE VOLTAGE, DC
Related Searches:
ZC800
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011997018
NSN
5961-01-199-7018
MFG
API ELECTRONICS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 0.2 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 0.02 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MINIMUM REVERSE VOLTAGE, DC
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155-0212-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011997019
NSN
5961-01-199-7019
155-0212-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011997019
NSN
5961-01-199-7019
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2N5031
TRANSISTOR
NSN, MFG P/N
5961011997315
NSN
5961-01-199-7315
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON