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5961-01-199-8867
20 Products
HC18/U
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011998867
NSN
5961-01-199-8867
MFG
UNITED STATES CRYSTAL CORP
Description
SEMICONDUCTOR DEVICE,DIODE
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472-1435-001
TRANSISTOR
NSN, MFG P/N
5961011997315
NSN
5961-01-199-7315
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
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SRF5177H
TRANSISTOR
NSN, MFG P/N
5961011997315
NSN
5961-01-199-7315
MFG
FREESCALE SEMICONDUCTOR INC.
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
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G390364-1
TRANSISTOR
NSN, MFG P/N
5961011997316
NSN
5961-01-199-7316
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM EMITTER CURRENT, RMS VALUE OF ALTERNATION COMPONENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 75.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM COLLECTOR-TO-BASE VOLTAGE, INSTANTANEOUS
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MJ10020
TRANSISTOR
NSN, MFG P/N
5961011997316
NSN
5961-01-199-7316
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM EMITTER CURRENT, RMS VALUE OF ALTERNATION COMPONENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 75.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM COLLECTOR-TO-BASE VOLTAGE, INSTANTANEOUS
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4902-00-9050
TRANSISTOR
NSN, MFG P/N
5961011997318
NSN
5961-01-199-7318
MFG
WAVETEK RF PRODUCTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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MRF905
TRANSISTOR
NSN, MFG P/N
5961011997318
NSN
5961-01-199-7318
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011997320
NSN
5961-01-199-7320
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 4.0 GRAMS
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM ON-STATE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.750 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 66.3 MAXIMUM BREAKDOWN VOLTAGE, DC
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011997322
NSN
5961-01-199-7322
479-1476-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011997322
NSN
5961-01-199-7322
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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KV1802
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011997322
NSN
5961-01-199-7322
MFG
NAMEPLATE INC
Description
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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MV1401
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011997322
NSN
5961-01-199-7322
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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880650-0096
TRANSISTOR
NSN, MFG P/N
5961011997655
NSN
5961-01-199-7655
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
TRANSISTOR
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12705251-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011998667
NSN
5961-01-199-8667
12705251-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011998667
NSN
5961-01-199-8667
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
RECTIFIER,SEMICONDUCTOR DEVICE
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011998667
NSN
5961-01-199-8667
SUES2602
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011998667
NSN
5961-01-199-8667
MFG
SEMICON COMPONENTS INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
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UES2602
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011998667
NSN
5961-01-199-8667
UES2602
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011998667
NSN
5961-01-199-8667
MFG
MICRO USPD INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
12705249-1
TRANSISTOR
NSN, MFG P/N
5961011998684
NSN
5961-01-199-8684
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
TRANSISTOR
Related Searches:
2N6686
TRANSISTOR
NSN, MFG P/N
5961011998684
NSN
5961-01-199-8684
MFG
HARRIS CORP FINDLAY OPNS
Description
TRANSISTOR
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12705089-1
TRANSISTOR
NSN, MFG P/N
5961011998686
NSN
5961-01-199-8686
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
TRANSISTOR
Related Searches:
12705104-1
TRANSISTOR
NSN, MFG P/N
5961011998687
NSN
5961-01-199-8687
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
TRANSISTOR
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C7521
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011998867
NSN
5961-01-199-8867
MFG
HOWELL INSTRUMENTS INC .
Description
SEMICONDUCTOR DEVICE,DIODE