My Quote Request
5961-01-203-9422
20 Products
A315T303-101
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012039422
NSN
5961-01-203-9422
A315T303-101
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012039422
NSN
5961-01-203-9422
MFG
TELEPHONE SYSTEMS/COMMUNICATIONS
Description
MATERIAL: PLASTIC POLYAMIDE
MOUNTING FACILITY TYPE AND QUANTITY: 2 UNTHREADED HOLE SINGLE MOUNTING FACILITY
OVERALL HEIGHT: 0.480 INCHES NOMINAL
OVERALL LENGTH: 1.625 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
STYLE DESIGNATOR: 4B FOUR BEND-TAB PLATE
UNTHREADED MOUNTING HOLE DIAMETER: 0.210 INCHES NOMINAL SINGLE MOUNTING FACILITY
Related Searches:
409441
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012036103
NSN
5961-01-203-6103
MFG
TARGET CORPORATION DBA TARGET
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
SD10WEE/12V
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012036103
NSN
5961-01-203-6103
SD10WEE/12V
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012036103
NSN
5961-01-203-6103
MFG
MICRONETICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
167592
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012036104
NSN
5961-01-203-6104
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRMMAN NORDEN SYSTEMS DIV NAVAL AND MARINE SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.406 INCHES NOMINAL
OVERALL LENGTH: 0.812 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.343 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
B724-120-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012036104
NSN
5961-01-203-6104
B724-120-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012036104
NSN
5961-01-203-6104
MFG
EDAL INDUSTRIES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.406 INCHES NOMINAL
OVERALL LENGTH: 0.812 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.343 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1A7192-7TX
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012036749
NSN
5961-01-203-6749
1A7192-7TX
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012036749
NSN
5961-01-203-6749
MFG
GE AVIATIONS SYSTEMS LLC DBA GE AVIATION DIV ELECTRICAL POWER-POMPANO
Description
SPECIAL FEATURES: SILICON;200 VOLTS;150 AMPERE;METAL AND PLASTIC ENCASED;3 TURRET-TYPE TERMINALS;2.250 IN. LG;0.344 IN. W;1.000 IN. H
Related Searches:
5012-126
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012036749
NSN
5961-01-203-6749
5012-126
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012036749
NSN
5961-01-203-6749
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SPECIAL FEATURES: SILICON;200 VOLTS;150 AMPERE;METAL AND PLASTIC ENCASED;3 TURRET-TYPE TERMINALS;2.250 IN. LG;0.344 IN. W;1.000 IN. H
Related Searches:
SA8299
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012036749
NSN
5961-01-203-6749
SA8299
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012036749
NSN
5961-01-203-6749
MFG
SEMTECH CORPORATION
Description
SPECIAL FEATURES: SILICON;200 VOLTS;150 AMPERE;METAL AND PLASTIC ENCASED;3 TURRET-TYPE TERMINALS;2.250 IN. LG;0.344 IN. W;1.000 IN. H
Related Searches:
SENB258
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012036749
NSN
5961-01-203-6749
SENB258
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012036749
NSN
5961-01-203-6749
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
SPECIAL FEATURES: SILICON;200 VOLTS;150 AMPERE;METAL AND PLASTIC ENCASED;3 TURRET-TYPE TERMINALS;2.250 IN. LG;0.344 IN. W;1.000 IN. H
Related Searches:
1N1200B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012036924
NSN
5961-01-203-6924
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 250.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 0.800 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD
THREAD QUANTITY PER INCH: 32
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
019-005592-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012037356
NSN
5961-01-203-7356
019-005592-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012037356
NSN
5961-01-203-7356
MFG
EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES
Description
III END ITEM IDENTIFICATION: AN/ALQ-161;B-1B ACFT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 00752-019-005592 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
UZ5114HR2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012037356
NSN
5961-01-203-7356
MFG
MICRO USPD INC
Description
III END ITEM IDENTIFICATION: AN/ALQ-161;B-1B ACFT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 00752-019-005592 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
025-10107
TRANSISTOR
NSN, MFG P/N
5961012038234
NSN
5961-01-203-8234
MFG
YORK INTERNATIONAL CORPORATION DBA JOHNSON CONTROLS
Description
TRANSISTOR
Related Searches:
9360894
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012038238
NSN
5961-01-203-8238
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
DESIGN CONTROL REFERENCE: 95-4321
III END ITEM IDENTIFICATION: 20MM M163A2
MANUFACTURERS CODE: 59993
OVERALL LENGTH: 1.450 INCHES NOMINAL
SPECIAL FEATURES: OPERATING TEMPERATURE:MINUS 55 DEGREES TO PLUS 125 DEGREES C
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
95-4321
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012038238
NSN
5961-01-203-8238
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
DESIGN CONTROL REFERENCE: 95-4321
III END ITEM IDENTIFICATION: 20MM M163A2
MANUFACTURERS CODE: 59993
OVERALL LENGTH: 1.450 INCHES NOMINAL
SPECIAL FEATURES: OPERATING TEMPERATURE:MINUS 55 DEGREES TO PLUS 125 DEGREES C
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
10270662
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012038323
NSN
5961-01-203-8323
10270662
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012038323
NSN
5961-01-203-8323
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC ALL TRANSISTOR
DESIGN CONTROL REFERENCE: 10270662
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 18876
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
OVERALL WIDTH: 0.120 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.019 INCHES NOMINAL
TERMINAL LENGTH: 0.176 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 50.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
Related Searches:
2N3518
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012038323
NSN
5961-01-203-8323
2N3518
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012038323
NSN
5961-01-203-8323
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC ALL TRANSISTOR
DESIGN CONTROL REFERENCE: 10270662
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 18876
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
OVERALL WIDTH: 0.120 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.019 INCHES NOMINAL
TERMINAL LENGTH: 0.176 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 50.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
Related Searches:
SD2219AF
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012038323
NSN
5961-01-203-8323
SD2219AF
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012038323
NSN
5961-01-203-8323
MFG
SEMICOA DBA SEMICOA SEMI CONDUCTORS
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC ALL TRANSISTOR
DESIGN CONTROL REFERENCE: 10270662
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 18876
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
OVERALL WIDTH: 0.120 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.019 INCHES NOMINAL
TERMINAL LENGTH: 0.176 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 50.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
Related Searches:
JAN1N4571A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012038525
NSN
5961-01-203-8525
JAN1N4571A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012038525
NSN
5961-01-203-8525
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4571A
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/452
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/452 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
703-A
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012039422
NSN
5961-01-203-9422
MFG
ACCESSORIES FOR ELECTRONICS INC DBA AFE
Description
MATERIAL: PLASTIC POLYAMIDE
MOUNTING FACILITY TYPE AND QUANTITY: 2 UNTHREADED HOLE SINGLE MOUNTING FACILITY
OVERALL HEIGHT: 0.480 INCHES NOMINAL
OVERALL LENGTH: 1.625 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
STYLE DESIGNATOR: 4B FOUR BEND-TAB PLATE
UNTHREADED MOUNTING HOLE DIAMETER: 0.210 INCHES NOMINAL SINGLE MOUNTING FACILITY