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5961-01-207-6545
20 Products
SV317-6036A1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012076545
NSN
5961-01-207-6545
SV317-6036A1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012076545
NSN
5961-01-207-6545
MFG
TREADWELL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1000.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC AND 10.00 MILLIAMPERES MAXIMUM REVERSE BREAKDOWN CURRENT, INSTANTANEOUS
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6036A
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.570 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.13 MINIMUM BREAKDOWN VOLTAGE, DC AND 7.88 MAXIMUM BREAKDOWN VOLTAGE, DC
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MIS-30195-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012072893
NSN
5961-01-207-2893
MIS-30195-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012072893
NSN
5961-01-207-2893
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
26402-0013
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012073084
NSN
5961-01-207-3084
26402-0013
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012073084
NSN
5961-01-207-3084
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
OVERALL LENGTH: 1.997 INCHES MINIMUM AND 2.030 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 31.5 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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GZ14930A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012073084
NSN
5961-01-207-3084
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
OVERALL LENGTH: 1.997 INCHES MINIMUM AND 2.030 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 31.5 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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240715
TRANSISTOR
NSN, MFG P/N
5961012073433
NSN
5961-01-207-3433
MFG
LOCKHEED MARTIN CORP ELECTRONICS AND MISSILES DIV
Description
TRANSISTOR
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JANTXV2N6287
TRANSISTOR
NSN, MFG P/N
5961012073433
NSN
5961-01-207-3433
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
TRANSISTOR
Related Searches:
1N4773A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012074677
NSN
5961-01-207-4677
MFG
N A P SMD TECHNOLOGY INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
720602-17
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012074677
NSN
5961-01-207-4677
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CIL250
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012075211
NSN
5961-01-207-5211
MFG
CRYSTALONICS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
980 2126
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961012076291
NSN
5961-01-207-6291
MFG
CARGOTEC USA INC.
Description
III END ITEM IDENTIFICATION: HEMTT FAMILY (HEAVY EXPANDED MOBILITY TACTICAL TRUCKS); 2320-01-097-0260 HIAB CRANE (HEMTT)
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2N6432
TRANSISTOR
NSN, MFG P/N
5961012076541
NSN
5961-01-207-6541
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 150.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 200.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
B4028527
TRANSISTOR
NSN, MFG P/N
5961012076541
NSN
5961-01-207-6541
MFG
DEPARTMENT OF THE ARMY HQ UNITED STATES ARMY COMMUNICATIONS RESEARCH AND DEVELOPMENT COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 150.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 200.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
2N4858A
TRANSISTOR
NSN, MFG P/N
5961012076542
NSN
5961-01-207-6542
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE
Related Searches:
B4028184
TRANSISTOR
NSN, MFG P/N
5961012076542
NSN
5961-01-207-6542
MFG
DEPARTMENT OF THE ARMY HQ UNITED STATES ARMY COMMUNICATIONS RESEARCH AND DEVELOPMENT COMMAND
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE
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B4028255
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012076543
NSN
5961-01-207-6543
MFG
DEPARTMENT OF THE ARMY HQ UNITED STATES ARMY COMMUNICATIONS RESEARCH AND DEVELOPMENT COMMAND
Description
CAPACITANCE RATING IN PICOFARADS: 0.75 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
GC-4433-15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012076543
NSN
5961-01-207-6543
GC-4433-15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012076543
NSN
5961-01-207-6543
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
CAPACITANCE RATING IN PICOFARADS: 0.75 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
1N4007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012076544
NSN
5961-01-207-6544
MFG
CLARK EQUIPMENT COMPANY DBA DOOSAN INFRACORE PORTABLE POWER DIV DOOSAN INFRACORE PORTABLE POWER
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
35364751
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012076544
NSN
5961-01-207-6544
MFG
DOOSAN INTERNATIONAL USA INC DIV PORTABLE POWER
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JANTXV1N6036A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012076545
NSN
5961-01-207-6545
JANTXV1N6036A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012076545
NSN
5961-01-207-6545
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1000.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC AND 10.00 MILLIAMPERES MAXIMUM REVERSE BREAKDOWN CURRENT, INSTANTANEOUS
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6036A
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.570 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.13 MINIMUM BREAKDOWN VOLTAGE, DC AND 7.88 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
SV317-6036A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012076545
NSN
5961-01-207-6545
SV317-6036A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012076545
NSN
5961-01-207-6545
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1000.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC AND 10.00 MILLIAMPERES MAXIMUM REVERSE BREAKDOWN CURRENT, INSTANTANEOUS
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6036A
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.570 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.13 MINIMUM BREAKDOWN VOLTAGE, DC AND 7.88 MAXIMUM BREAKDOWN VOLTAGE, DC