My Quote Request
5961-01-215-7865
20 Products
FP150F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012157865
NSN
5961-01-215-7865
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
602436-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012157866
NSN
5961-01-215-7866
MFG
EDO
Description
CURRENT RATING PER CHARACTERISTIC: 1.20 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.690 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
FP50F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012157866
NSN
5961-01-215-7866
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
CURRENT RATING PER CHARACTERISTIC: 1.20 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.690 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SSHF5000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012157866
NSN
5961-01-215-7866
MFG
SEMICON COMPONENTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.20 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.690 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SM-D-853051
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012158577
NSN
5961-01-215-8577
SM-D-853051
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012158577
NSN
5961-01-215-8577
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SMD853051
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012158577
NSN
5961-01-215-8577
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
VE08X
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012158751
NSN
5961-01-215-8751
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 17.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
OVERALL DIAMETER: 0.330 INCHES NOMINAL
OVERALL HEIGHT: 0.200 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 35.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
KVP15
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012158819
NSN
5961-01-215-8819
KVP15
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012158819
NSN
5961-01-215-8819
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
SPECIAL FEATURES: SILICON;5.000 IN. LG;0.750 IN. MAX H;0.750 IN. MAX W;TWO 0.375 IN. MAX H TURRET TYPE TERMINALS;TWO 6-32 THD,0.250 IN. D,MTG HOLES LOCATED 4.500 IN. C TO C ALONG LG;15000 VOLTS PEAK INVERSE VOLTAGE;21 VOLTS FORWARD VOLTAGE,DC;1.00 AMPS
Related Searches:
5016085-001
TRANSISTOR
NSN, MFG P/N
5961012159309
NSN
5961-01-215-9309
MFG
THALES TRAINING & SIMULATION LTD
Description
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
MEM562
TRANSISTOR
NSN, MFG P/N
5961012159309
NSN
5961-01-215-9309
MFG
GENERAL SEMICONDUCTOR INC
Description
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
635-0825-010
LED STATUS DISPLAY
NSN, MFG P/N
5961012159408
NSN
5961-01-215-9408
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
LED STATUS DISPLAY
Related Searches:
D39C2
TRANSISTOR
NSN, MFG P/N
5961012160411
NSN
5961-01-216-0411
MFG
GENERAL ELECTRIC CO GENERAL PURPOSE CONTROL DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 5600.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 14.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
10-1046
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012160412
NSN
5961-01-216-0412
MFG
COMPUTER PRODUCTS INC BOSCHERT DIV
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.405 INCHES MAXIMUM
OVERALL LENGTH: 0.246 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.010 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
MR824
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012160412
NSN
5961-01-216-0412
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.405 INCHES MAXIMUM
OVERALL LENGTH: 0.246 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.010 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
JAN2N2919L
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012161079
NSN
5961-01-216-1079
JAN2N2919L
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012161079
NSN
5961-01-216-1079
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N2919L
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-99
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/355
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.25 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/355 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
TRANSFER RATIO: 240.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN ALL TRANSISTOR
Related Searches:
5495834
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012161636
NSN
5961-01-216-1636
5495834
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012161636
NSN
5961-01-216-1636
MFG
UNITRACE INC
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
5495822
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012161637
NSN
5961-01-216-1637
5495822
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012161637
NSN
5961-01-216-1637
MFG
NAVAL SEA SYSTEMS COMMAND
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
5495833
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012161638
NSN
5961-01-216-1638
5495833
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012161638
NSN
5961-01-216-1638
MFG
NAVAL SEA SYSTEMS COMMAND
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
4171204P011
TRANSISTOR
NSN, MFG P/N
5961012162042
NSN
5961-01-216-2042
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
151-0711-01
TRANSISTOR
NSN, MFG P/N
5961012162044
NSN
5961-01-216-2044
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR