My Quote Request
5961-01-221-1166
20 Products
3T0037H008
TRANSISTOR
NSN, MFG P/N
5961012211166
NSN
5961-01-221-1166
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PEACEKEEPER MGCS
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
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JTX1N821
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012209914
NSN
5961-01-220-9914
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.5 MAXIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
5E4820/53-0005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012209915
NSN
5961-01-220-9915
5E4820/53-0005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012209915
NSN
5961-01-220-9915
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.3 GRAMS
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.03 MAXIMUM NOMINAL REGULATOR VOLTAGE
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JANTX1N940B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012209915
NSN
5961-01-220-9915
JANTX1N940B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012209915
NSN
5961-01-220-9915
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.3 GRAMS
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.03 MAXIMUM NOMINAL REGULATOR VOLTAGE
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846-C15-6D
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012209916
NSN
5961-01-220-9916
846-C15-6D
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012209916
NSN
5961-01-220-9916
MFG
AMETEK PROGRAMMABLE POWER INC.
Description
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 2.627 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.063 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 480.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
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C156D
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012209916
NSN
5961-01-220-9916
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 2.627 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.063 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 480.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
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353-9043-030
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012209917
NSN
5961-01-220-9917
353-9043-030
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012209917
NSN
5961-01-220-9917
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 23.00 AMPERES MAXIMUM PEAK PULSE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: EXTERNAL SURFACES SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.405 INCHES MAXIMUM
OVERALL LENGTH: 2.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.365 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 418.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012209917
NSN
5961-01-220-9917
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012209917
NSN
5961-01-220-9917
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 23.00 AMPERES MAXIMUM PEAK PULSE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: EXTERNAL SURFACES SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.405 INCHES MAXIMUM
OVERALL LENGTH: 2.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.365 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 418.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
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PHP250-X
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012209917
NSN
5961-01-220-9917
PHP250-X
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012209917
NSN
5961-01-220-9917
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 23.00 AMPERES MAXIMUM PEAK PULSE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: EXTERNAL SURFACES SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.405 INCHES MAXIMUM
OVERALL LENGTH: 2.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.365 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 418.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
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Q-405
TRANSISTOR
NSN, MFG P/N
5961012210600
NSN
5961-01-221-0600
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
TRANSISTOR
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JANTX1N5304
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012210808
NSN
5961-01-221-0808
JANTX1N5304
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012210808
NSN
5961-01-221-0808
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.98 MILLIAMPERES MAXIMUM PEAK POINT CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5304-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/463
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/463 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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5E4820/51-0005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012210809
NSN
5961-01-221-0809
5E4820/51-0005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012210809
NSN
5961-01-221-0809
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.6 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JANTX1N747A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012210809
NSN
5961-01-221-0809
JANTX1N747A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012210809
NSN
5961-01-221-0809
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.6 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
5E4820/51-0004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012210810
NSN
5961-01-221-0810
5E4820/51-0004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012210810
NSN
5961-01-221-0810
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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JANTX1N746A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012210810
NSN
5961-01-221-0810
JANTX1N746A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012210810
NSN
5961-01-221-0810
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
5E4810/08-0005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012210811
NSN
5961-01-221-0811
5E4810/08-0005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012210811
NSN
5961-01-221-0811
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.3 GRAMS
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 80.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 500.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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JANTX1N5419
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012210811
NSN
5961-01-221-0811
JANTX1N5419
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012210811
NSN
5961-01-221-0811
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.3 GRAMS
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 80.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 500.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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846-C15-2P
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012210812
NSN
5961-01-221-0812
846-C15-2P
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012210812
NSN
5961-01-221-0812
MFG
AMETEK PROGRAMMABLE POWER INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 MILLIAMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 2.627 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.063 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
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C152P
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012210812
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5961-01-221-0812
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 MILLIAMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 2.627 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.063 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
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3T0037H010
TRANSISTOR
NSN, MFG P/N
5961012211165
NSN
5961-01-221-1165
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PEACEKEEPER MGCS
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM