My Quote Request
5961-01-227-6311
20 Products
SA7349
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012276311
NSN
5961-01-227-6311
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
SEMICONDUCTOR DEVICE,DIODE
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TRANSISTOR
NSN, MFG P/N
5961012274207
NSN
5961-01-227-4207
MFG
ACRIAN INC
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.260 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL WIDTH: 0.850 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 NOMINAL COLLECTOR SUPPLY VOLTAGE
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T1P42D
TRANSISTOR
NSN, MFG P/N
5961012274208
NSN
5961-01-227-4208
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.546 INCHES NOMINAL
OVERALL LENGTH: 0.705 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.381 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
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1643233
TRANSISTOR
NSN, MFG P/N
5961012274211
NSN
5961-01-227-4211
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
SPECIAL FEATURES: CRIMP ON EACH TERMINAL; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.560 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
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12RH15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012274212
NSN
5961-01-227-4212
MFG
NEC ELECTRONICS USA INC MICROCOMPUTER DIV ADVANCED CIRCUITS ENGINEERING
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES NOMINAL FORWARD CURRENT, DC
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 1.200 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.374 INCHES NOMINAL
SPECIAL FEATURES: FAST RECOVERY
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.4 NOMINAL FORWARD VOLTAGE, PEAK
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FBL-00-131
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012274212
NSN
5961-01-227-4212
FBL-00-131
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012274212
NSN
5961-01-227-4212
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES NOMINAL FORWARD CURRENT, DC
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 1.200 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.374 INCHES NOMINAL
SPECIAL FEATURES: FAST RECOVERY
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.4 NOMINAL FORWARD VOLTAGE, PEAK
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R4040260
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012274214
NSN
5961-01-227-4214
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES NOMINAL FORWARD CURRENT, DC
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.422 INCHES MINIMUM AND 0.453 INCHES MAXIMUM
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
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DKV-6524D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012274215
NSN
5961-01-227-4215
MFG
SKYWORKS SOLUTIONS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 22.5 MINIMUM AND 28.0 MAXIMUM
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
OVERALL LENGTH: 2.230 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MINIMUM BREAKDOWN VOLTAGE, DC
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VA70-0120-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012274215
NSN
5961-01-227-4215
VA70-0120-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012274215
NSN
5961-01-227-4215
MFG
SELEX GALILEO LTD
Description
CAPACITANCE RATING IN PICOFARADS: 22.5 MINIMUM AND 28.0 MAXIMUM
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
OVERALL LENGTH: 2.230 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MINIMUM BREAKDOWN VOLTAGE, DC
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581-557
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012274216
NSN
5961-01-227-4216
MFG
AMPEX DATA SYSTEMS CORP COMPUTER PRODUCTS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL WORKING PEAK REVERSE VOLTAGE
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MBR120P
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012274216
NSN
5961-01-227-4216
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL WORKING PEAK REVERSE VOLTAGE
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20-00718-002
TRANSISTOR
NSN, MFG P/N
5961012274523
NSN
5961-01-227-4523
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
TRANSISTOR
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TRANSISTOR
NSN, MFG P/N
5961012274523
NSN
5961-01-227-4523
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR
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9999-7213-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012275390
NSN
5961-01-227-5390
9999-7213-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012275390
NSN
5961-01-227-5390
MFG
FLIGHTLINE ELECTRONICS INC. DBA ULTRA ELEC FLIGHTLINE SYSTEMS DIV ULTRA ELECTRONICS FLIGHTLINE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, DC
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KV-2801A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012275390
NSN
5961-01-227-5390
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, DC
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012275391
NSN
5961-01-227-5391
DMS 87023B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012275391
NSN
5961-01-227-5391
MFG
DLA LAND AND MARITIME
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-116
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.130 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012275391
NSN
5961-01-227-5391
MHQ6100AHXV
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012275391
NSN
5961-01-227-5391
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-116
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.130 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012275784
NSN
5961-01-227-5784
7546708P1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012275784
NSN
5961-01-227-5784
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: THREADED HOLE
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL HEIGHT: 0.910 INCHES MAXIMUM
OVERALL LENGTH: 0.840 INCHES NOMINAL
OVERALL WIDTH: 0.619 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 4 TURRET
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 45.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012275784
NSN
5961-01-227-5784
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012275784
NSN
5961-01-227-5784
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: THREADED HOLE
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL HEIGHT: 0.910 INCHES MAXIMUM
OVERALL LENGTH: 0.840 INCHES NOMINAL
OVERALL WIDTH: 0.619 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 4 TURRET
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 45.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE
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TRANSISTOR
NSN, MFG P/N
5961012276310
NSN
5961-01-227-6310
MFG
RCA CORP GOVERNMENT AND COMMERCIAL SYSTEMS COMMERCIAL COMMUNICATIONS SYSTEMS DIV
Description
TRANSISTOR