My Quote Request
5961-01-232-0896
20 Products
SEN-B-224-H05
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012320896
NSN
5961-01-232-0896
SEN-B-224-H05
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012320896
NSN
5961-01-232-0896
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 125.00 AMPERES FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.425 INCHES MAXIMUM
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
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644088
TRANSISTOR
NSN, MFG P/N
5961012316581
NSN
5961-01-231-6581
MFG
AMERICAN MONARCH CORP
Description
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL BREAKOVER VOLTAGE, DC
Related Searches:
FBL-00-209
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012316582
NSN
5961-01-231-6582
FBL-00-209
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012316582
NSN
5961-01-231-6582
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
61556-009
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012318450
NSN
5961-01-231-8450
61556-009
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012318450
NSN
5961-01-231-8450
MFG
DYNALEC CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
OVERALL HEIGHT: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.765 INCHES MAXIMUM
OVERALL WIDTH: 0.765 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 TURRET
Related Searches:
S10A20
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012318450
NSN
5961-01-231-8450
S10A20
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012318450
NSN
5961-01-231-8450
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
OVERALL HEIGHT: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.765 INCHES MAXIMUM
OVERALL WIDTH: 0.765 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 TURRET
Related Searches:
SD1019
TRANSISTOR
NSN, MFG P/N
5961012318874
NSN
5961-01-231-8874
MFG
STMICROELECTRONICS INC
Description
TRANSISTOR
Related Searches:
911319-6
TRANSISTOR
NSN, MFG P/N
5961012318875
NSN
5961-01-231-8875
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 12.50 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: FLANGE, CASE AND LEADS PLATED; CAP PLATING OPTION GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.225 INCHES NOMINAL
OVERALL LENGTH: 0.900 INCHES NOMINAL
OVERALL WIDTH: 0.405 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 750.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION AND 360.0 WATTS MAXIMUM POWER OUTPUT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 RIBBON
TEST DATA DOCUMENT: 80249-911319 DRAWING
TRANSFER RATIO: 120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
FBN-L182
TRANSISTOR
NSN, MFG P/N
5961012318876
NSN
5961-01-231-8876
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
TRANSISTOR
Related Searches:
FBN-Z119
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012318877
NSN
5961-01-231-8877
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
479-1468-013
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012318998
NSN
5961-01-231-8998
479-1468-013
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012318998
NSN
5961-01-231-8998
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PEACEKEEPER MGCS
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 23.3 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
655365
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012319123
NSN
5961-01-231-9123
655365
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012319123
NSN
5961-01-231-9123
MFG
RAYTHEON COMPANY
Description
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: F-15 ACFT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: PLATED CASE GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 6
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.430 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 1.005 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82577-655365 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
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CCFJ102
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012319123
NSN
5961-01-231-9123
CCFJ102
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012319123
NSN
5961-01-231-9123
MFG
SOLITRON DEVICES INC.
Description
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: F-15 ACFT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: PLATED CASE GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 6
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.430 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 1.005 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82577-655365 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
CMA82100-600
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012319123
NSN
5961-01-231-9123
CMA82100-600
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012319123
NSN
5961-01-231-9123
MFG
DATA DEVICE CORPORATION
Description
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: F-15 ACFT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: PLATED CASE GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 6
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.430 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 1.005 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82577-655365 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
5802944P2
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012319124
NSN
5961-01-231-9124
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
T2806M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012319396
NSN
5961-01-231-9396
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.546 INCHES NOMINAL
OVERALL LENGTH: 0.705 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.381 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
CC5397EE
TRANSISTOR
NSN, MFG P/N
5961012320392
NSN
5961-01-232-0392
MFG
PHILIPS SEMICONDUCTORS INC
Description
TRANSISTOR
Related Searches:
1810096-001
TRANSISTOR
NSN, MFG P/N
5961012320892
NSN
5961-01-232-0892
MFG
AERONAUTICAL INSTRUMENT & RADIO CO INC
Description
TRANSISTOR
Related Searches:
1810151
TRANSISTOR
NSN, MFG P/N
5961012320893
NSN
5961-01-232-0893
MFG
AERONAUTICAL INSTRUMENT & RADIO CO INC
Description
TRANSISTOR
Related Searches:
583R853H05
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012320896
NSN
5961-01-232-0896
583R853H05
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012320896
NSN
5961-01-232-0896
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 125.00 AMPERES FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.425 INCHES MAXIMUM
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
SA9957
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012320896
NSN
5961-01-232-0896
SA9957
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012320896
NSN
5961-01-232-0896
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 125.00 AMPERES FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.425 INCHES MAXIMUM
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET