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5961-01-233-2881
20 Products
MIS-19836/77
TRANSISTOR
NSN, MFG P/N
5961012332881
NSN
5961-01-233-2881
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: PATRIOT MISSILE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 175.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 18876-MIS-19836/77 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 750.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 400.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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JANTX2N6547
TRANSISTOR
NSN, MFG P/N
5961012332881
NSN
5961-01-233-2881
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: PATRIOT MISSILE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 175.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 18876-MIS-19836/77 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 750.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 400.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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11437810-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012332883
NSN
5961-01-233-2883
11437810-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012332883
NSN
5961-01-233-2883
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
SEMICONDUCTOR DEVICE,DIODE
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11449406
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012332913
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5961-01-233-2913
11449406
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012332913
NSN
5961-01-233-2913
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
III END ITEM IDENTIFICATION: PATRIOT, SURFACE TO AIR MISSILES
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04910
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012333177
NSN
5961-01-233-3177
MFG
OLYMPUS NDT NE INC.
Description
SEMICONDUCTOR DEVICE,DIODE
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C28640
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012333178
NSN
5961-01-233-3178
MFG
BOGUE ELECTRIC MANUFACTURING CO
Description
SEMICONDUCTOR DEVICE,DIODE
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143-117-054
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012333179
NSN
5961-01-233-3179
143-117-054
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012333179
NSN
5961-01-233-3179
MFG
EXIDE TECHNOLOGIES DBA GNB TECHNOLOGIES DIV EXIDE TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
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035-860
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012333180
NSN
5961-01-233-3180
035-860
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012333180
NSN
5961-01-233-3180
MFG
MILLER ELECTRIC MFG CO
Description
SEMICONDUCTOR DEVICE ASSEMBLY
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089151204
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012333768
NSN
5961-01-233-3768
MFG
SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205
Description
SEMICONDUCTOR DEVICE,DIODE
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553327G0002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012334000
NSN
5961-01-233-4000
553327G0002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012334000
NSN
5961-01-233-4000
MFG
THALES COMMUNICATIONS S.A.
Description
INCLOSURE MATERIAL: CERAMIC AND METAL
OVERALL DIAMETER: 0.086 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012334000
NSN
5961-01-233-4000
MFG
SKYWORKS SOLUTIONS INC.
Description
INCLOSURE MATERIAL: CERAMIC AND METAL
OVERALL DIAMETER: 0.086 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
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021050039
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012334001
NSN
5961-01-233-4001
MFG
ECT INDUSTRIES
Description
CAPACITANCE RATING IN PICOFARADS: 39.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 0.10 AMPERES MAXIMUM REVERSE CURRENT, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
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V39B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012334001
NSN
5961-01-233-4001
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CAPACITANCE RATING IN PICOFARADS: 39.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 0.10 AMPERES MAXIMUM REVERSE CURRENT, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
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S4003M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012334002
NSN
5961-01-233-4002
S4003M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012334002
NSN
5961-01-233-4002
MFG
TECCOR ELECTRONICS INC SEMICONDUCTOR DIV SUB OF RANCO
Description
CURRENT RATING PER CHARACTERISTIC: 1.90 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE AND 3.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.560 INCHES MINIMUM AND 0.625 INCHES MAXIMUM
OVERALL LENGTH: 0.400 INCHES NOMINAL
OVERALL WIDTH: 0.140 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS NOMINAL PEAK GATE POWER DISSIPATION AND 0.3 WATTS NOMINAL AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.2 MINIMUM GATE TRIGGER VOLTAGE, DC AND 1.5 MAXIMUM GATE TRIGGER VOLTAGE, DC
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14012082-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012334301
NSN
5961-01-233-4301
14012082-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012334301
NSN
5961-01-233-4301
MFG
SAGEM DEFENSE SECURITE - GROUPE SAFR AN
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
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14012297-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012334301
NSN
5961-01-233-4301
14012297-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012334301
NSN
5961-01-233-4301
MFG
SAGEM TELECOMMUNICATIONS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
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1N5617
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012334301
NSN
5961-01-233-4301
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
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353-6496-040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012334301
NSN
5961-01-233-4301
353-6496-040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012334301
NSN
5961-01-233-4301
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
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SC5617
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012334301
NSN
5961-01-233-4301
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
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20-033F00M00R00
TRANSISTOR
NSN, MFG P/N
5961012334612
NSN
5961-01-233-4612
MFG
CONCURRENT COMPUTER CORPORATION
Description
TRANSISTOR