My Quote Request
5961-01-235-0763
20 Products
54134101
TRANSISTOR
NSN, MFG P/N
5961012350763
NSN
5961-01-235-0763
MFG
OKI AMERICA INC
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
5016249-003
TRANSISTOR
NSN, MFG P/N
5961012350764
NSN
5961-01-235-0764
MFG
THALES TRAINING & SIMULATION LTD
Description
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
54118001
TRANSISTOR
NSN, MFG P/N
5961012350764
NSN
5961-01-235-0764
MFG
OKI AMERICA INC
Description
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
5016249-004
TRANSISTOR
NSN, MFG P/N
5961012350765
NSN
5961-01-235-0765
MFG
THALES TRAINING & SIMULATION LTD
Description
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
Related Searches:
54118101
TRANSISTOR
NSN, MFG P/N
5961012350765
NSN
5961-01-235-0765
MFG
OKI AMERICA INC
Description
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
Related Searches:
5016247-006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012350767
NSN
5961-01-235-0767
5016247-006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012350767
NSN
5961-01-235-0767
MFG
THALES TRAINING & SIMULATION LTD
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
Related Searches:
54115508
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012350767
NSN
5961-01-235-0767
MFG
OKI AMERICA INC
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
Related Searches:
5016247-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012350768
NSN
5961-01-235-0768
5016247-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012350768
NSN
5961-01-235-0768
MFG
THALES TRAINING & SIMULATION LTD
Description
FUNCTION FOR WHICH DESIGNED: RECTIFIER
Related Searches:
54134001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012350768
NSN
5961-01-235-0768
MFG
OKI AMERICA INC
Description
FUNCTION FOR WHICH DESIGNED: RECTIFIER
Related Searches:
5016247-005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012350769
NSN
5961-01-235-0769
5016247-005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012350769
NSN
5961-01-235-0769
MFG
THALES TRAINING & SIMULATION LTD
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
54127016
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012350769
NSN
5961-01-235-0769
MFG
OKI AMERICA INC
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
5016247-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012350770
NSN
5961-01-235-0770
5016247-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012350770
NSN
5961-01-235-0770
MFG
THALES TRAINING & SIMULATION LTD
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
Related Searches:
54115515
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012350770
NSN
5961-01-235-0770
MFG
OKI AMERICA INC
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
Related Searches:
23-052F00M00R00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012351258
NSN
5961-01-235-1258
23-052F00M00R00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012351258
NSN
5961-01-235-1258
MFG
CONCURRENT COMPUTER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.062 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 24.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 14.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
982097-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012351258
NSN
5961-01-235-1258
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.062 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 24.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 14.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
MBR320P
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012351258
NSN
5961-01-235-1258
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.062 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 24.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 14.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
JANS1N3893
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012351259
NSN
5961-01-235-1259
JANS1N3893
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012351259
NSN
5961-01-235-1259
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANS1N3893
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/304
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.453 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
JANS1N746A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012351260
NSN
5961-01-235-1260
JANS1N746A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012351260
NSN
5961-01-235-1260
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 120.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANS1N746A-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL S
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JANS1N747A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012351261
NSN
5961-01-235-1261
JANS1N747A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012351261
NSN
5961-01-235-1261
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 110.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANS1N747A-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL S
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.6 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JANS1N752A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012351262
NSN
5961-01-235-1262
JANS1N752A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012351262
NSN
5961-01-235-1262
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANS1N752A-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL S
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0