My Quote Request
5961-01-239-5851
20 Products
SVT6252H
TRANSISTOR
NSN, MFG P/N
5961012395851
NSN
5961-01-239-5851
MFG
OPTEK TECHNOLOGY INC
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.5 MAXIMUM BASE TO EMITTER SATURATION VOLTAGE
Related Searches:
033843-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012395852
NSN
5961-01-239-5852
MFG
SIMMONDS PRECISION PRODUCTS INC. DBA GOODRICH SENSORS AND INTERGRATED SYSTMES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
DER157
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012395852
NSN
5961-01-239-5852
MFG
GENERAL ELECTRIC CO POWER ELECTRONICS SYSTEMS DEPT
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BYW30-100U
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012395853
NSN
5961-01-239-5853
BYW30-100U
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012395853
NSN
5961-01-239-5853
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 6.0 GRAMS
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 31.8 MILLIMETERS MAXIMUM
OVERALL WIDTH ACROSS FLATS: 11.0 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
54-11893-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012395854
NSN
5961-01-239-5854
54-11893-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012395854
NSN
5961-01-239-5854
MFG
COMPAQ FEDERAL LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
152-0405-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012395980
NSN
5961-01-239-5980
152-0405-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012395980
NSN
5961-01-239-5980
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
1N5567B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012395980
NSN
5961-01-239-5980
MFG
N A P SMD TECHNOLOGY INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
DZ841205A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012395980
NSN
5961-01-239-5980
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
26-1161-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012396235
NSN
5961-01-239-6235
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
587382-11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012396236
NSN
5961-01-239-6236
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
587382-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012396237
NSN
5961-01-239-6237
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BC179B
TRANSISTOR
NSN, MFG P/N
5961012396523
NSN
5961-01-239-6523
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS NOMINAL COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
MRF429
TRANSISTOR
NSN, MFG P/N
5961012396524
NSN
5961-01-239-6524
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 NOMINAL COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 4.0 NOMINAL EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
A1207813
TRANSISTOR
NSN, MFG P/N
5961012396525
NSN
5961-01-239-6525
MFG
THALES AVIONICS SA
Description
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.105 INCHES NOMINAL
OVERALL LENGTH: 1.050 INCHES NOMINAL
OVERALL WIDTH: 0.305 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.625 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
BD679A
TRANSISTOR
NSN, MFG P/N
5961012396525
NSN
5961-01-239-6525
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.105 INCHES NOMINAL
OVERALL LENGTH: 1.050 INCHES NOMINAL
OVERALL WIDTH: 0.305 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.625 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
1N1186AR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012396526
NSN
5961-01-239-6526
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MINIMUM FORWARD CURRENT, AVERAGE OR 150.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.438 INCHES MINIMUM AND 0.550 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
1583770
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012396902
NSN
5961-01-239-6902
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 64547
MFR SOURCE CONTROLLING REFERENCE: 1583770
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 1.249 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.683 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 83298-1583770 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1583770-12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012396902
NSN
5961-01-239-6902
1583770-12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012396902
NSN
5961-01-239-6902
MFG
MICROSEMI CORP-COLORADO
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 64547
MFR SOURCE CONTROLLING REFERENCE: 1583770
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 1.249 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.683 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 83298-1583770 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
NH1583770-12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012396902
NSN
5961-01-239-6902
NH1583770-12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012396902
NSN
5961-01-239-6902
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 64547
MFR SOURCE CONTROLLING REFERENCE: 1583770
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 1.249 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.683 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 83298-1583770 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
2SC2120-Y
TRANSISTOR
NSN, MFG P/N
5961012397744
NSN
5961-01-239-7744
MFG
TOSHIBA SYOUJI
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND -800.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-146-5801 OSCILLOSCOPE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 4.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.7 MILLIMETERS MAXIMUM
OVERALL WIDTH: 5.1 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 127.0 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 320.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN