My Quote Request
5961-01-246-6874
20 Products
V22-9-5532-310UTR0605
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012466874
NSN
5961-01-246-6874
V22-9-5532-310UTR0605
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012466874
NSN
5961-01-246-6874
MFG
ESW GMBH
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
VVC3261
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012463642
NSN
5961-01-246-3642
MFG
C O D I CORP DBA CODI SEMICONDUCTOR INC
Description
CAPACITANCE RATING IN PICOFARADS: 22.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MINIMUM REVERSE VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
AP113732M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012463646
NSN
5961-01-246-3646
MFG
GIORDANO ASSOCIATES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
Z11.0 1%
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012463646
NSN
5961-01-246-3646
MFG
JAPLAR GROUP INC. DBA JAPLAR SCHAUER
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1161654-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012463647
NSN
5961-01-246-3647
1161654-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012463647
NSN
5961-01-246-3647
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 63.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: CH-53A/D/E, RH-53, H-46 SEA KNIGHT HELICOPTERS. KC-130 HERCULES AIRCRAFT.
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.742 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.684 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
68-7057
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012463647
NSN
5961-01-246-3647
68-7057
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012463647
NSN
5961-01-246-3647
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 63.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: CH-53A/D/E, RH-53, H-46 SEA KNIGHT HELICOPTERS. KC-130 HERCULES AIRCRAFT.
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.742 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.684 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
C148PBR1200
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012463647
NSN
5961-01-246-3647
C148PBR1200
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012463647
NSN
5961-01-246-3647
MFG
SEMITRONICS CORP
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 63.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: CH-53A/D/E, RH-53, H-46 SEA KNIGHT HELICOPTERS. KC-130 HERCULES AIRCRAFT.
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.742 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.684 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
1161655-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012463648
NSN
5961-01-246-3648
1161655-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012463648
NSN
5961-01-246-3648
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.646 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
68-6865
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012463648
NSN
5961-01-246-3648
68-6865
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012463648
NSN
5961-01-246-3648
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.646 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
C137PBR1200
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012463648
NSN
5961-01-246-3648
C137PBR1200
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012463648
NSN
5961-01-246-3648
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.646 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
71.15.25.6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012464444
NSN
5961-01-246-4444
71.15.25.6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012464444
NSN
5961-01-246-4444
MFG
PROMINENT FLUID CONTROLS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
71.15.26.4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012464445
NSN
5961-01-246-4445
71.15.26.4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012464445
NSN
5961-01-246-4445
MFG
PROMINENT FLUID CONTROLS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
P16214
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012464484
NSN
5961-01-246-4484
P16214
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012464484
NSN
5961-01-246-4484
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
III END ITEM IDENTIFICATION: AVIATION GROUND POWER UNIT (AG-PU) (INCLUDING ELECTRICAL DC 28 V AT 700 AMPS MAXIMUN; AC 115-230 V, 30KV AT 400 HZ MAX; AC 110, 60HZ AT 500 W MAX; HYDRAULIC 3,300 LBS AT 15 GPM MAX; PNEUDRAULIC - 60 LB PM AT 40 PSI MAX
Related Searches:
G390238S1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012464593
NSN
5961-01-246-4593
MFG
MOBIL CHEMICAL CO CHEMICAL COATINGS DIV DIV OF MOBIL OIL CORP
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
14BB114
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012464594
NSN
5961-01-246-4594
MFG
SOLITRON DEVICES INC.
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS EXTERNAL SURFACES GOLD
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-61 ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 1 ALL TRANSISTOR
MOUNTING METHOD: THREADED STUD ALL TRANSISTOR
NOMINAL THREAD SIZE: 0.250 INCHES ALL TRANSISTOR
OVERALL LENGTH: 1.245 INCHES MAXIMUM ALL TRANSISTOR
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG ALL TRANSISTOR
THREAD SERIES DESIGNATOR: UNF ALL TRANSISTOR
TRANSFER RATIO: 90.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 550.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 450.0 MINIMUM COLLECTOR-TO-EMITTER SUBSTAINING VOLTAGE, WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER ALL TRANSISTOR
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0 ALL TRANSISTOR
Related Searches:
6134667-2
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012464594
NSN
5961-01-246-4594
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS EXTERNAL SURFACES GOLD
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-61 ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 1 ALL TRANSISTOR
MOUNTING METHOD: THREADED STUD ALL TRANSISTOR
NOMINAL THREAD SIZE: 0.250 INCHES ALL TRANSISTOR
OVERALL LENGTH: 1.245 INCHES MAXIMUM ALL TRANSISTOR
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG ALL TRANSISTOR
THREAD SERIES DESIGNATOR: UNF ALL TRANSISTOR
TRANSFER RATIO: 90.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 550.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 450.0 MINIMUM COLLECTOR-TO-EMITTER SUBSTAINING VOLTAGE, WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER ALL TRANSISTOR
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0 ALL TRANSISTOR
Related Searches:
H980045-001B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012465620
NSN
5961-01-246-5620
H980045-001B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012465620
NSN
5961-01-246-5620
MFG
RAYTHEON COMPANY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.630 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 0.300 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 UNINSULATED WIRE LEAD
Related Searches:
SA9629
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012465620
NSN
5961-01-246-5620
SA9629
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012465620
NSN
5961-01-246-5620
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.630 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 0.300 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 UNINSULATED WIRE LEAD
Related Searches:
SEN-B-451-001B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012465620
NSN
5961-01-246-5620
SEN-B-451-001B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012465620
NSN
5961-01-246-5620
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.630 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 0.300 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 UNINSULATED WIRE LEAD
Related Searches:
UTR0605
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012466874
NSN
5961-01-246-6874
MFG
MICRO USPD INC
Description
SEMICONDUCTOR DEVICE,DIODE