My Quote Request
5961-01-247-8706
20 Products
MT6816
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012478706
NSN
5961-01-247-8706
MFG
MICROSEMI CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE GRD PWR SUP
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-113
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
1N6146A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012478707
NSN
5961-01-247-8707
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE GRD PWR SUP
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-131
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
280-20045-131
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012478707
NSN
5961-01-247-8707
280-20045-131
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012478707
NSN
5961-01-247-8707
MFG
THE BOEING COMPANY DBA BOEING
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE GRD PWR SUP
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-131
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
MG1331
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012478707
NSN
5961-01-247-8707
MFG
MICROSEMI CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE GRD PWR SUP
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-131
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
280-20045-128
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012478708
NSN
5961-01-247-8708
280-20045-128
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012478708
NSN
5961-01-247-8708
MFG
THE BOEING COMPANY DBA BOEING
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE GRD PWR SUP
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-128
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
JANTXVIN4962
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012478708
NSN
5961-01-247-8708
JANTXVIN4962
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012478708
NSN
5961-01-247-8708
MFG
THERM-O-DISC INCORPORATED
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE GRD PWR SUP
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-128
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
280-21056-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012478709
NSN
5961-01-247-8709
280-21056-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012478709
NSN
5961-01-247-8709
MFG
THE BOEING COMPANY DBA BOEING
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE GRD PWR SUP
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-21056-101
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
GZ44316D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012478709
NSN
5961-01-247-8709
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE GRD PWR SUP
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-21056-101
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
200416
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012478826
NSN
5961-01-247-8826
MFG
C F ELECTRONICS INC
Description
MAJOR COMPONENTS: ONE MOUNTING BOARD,TWO TRANSISTORS,ONE BRACKET
Related Searches:
8500560-421
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012479297
NSN
5961-01-247-9297
8500560-421
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012479297
NSN
5961-01-247-9297
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
UTG8060
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012479297
NSN
5961-01-247-9297
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
55440236-001
TRANSISTOR
NSN, MFG P/N
5961012479483
NSN
5961-01-247-9483
MFG
L-3 COMMUNICATIONS CORPORATION DBA TELEMETRY EAST DIV TELEMETRY-EAST
Description
CURRENT RATING PER CHARACTERISTIC: 0.32 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL HEIGHT: 17.6 MILLIMETERS MAXIMUM
OVERALL LENGTH: 28.2 MILLIMETERS MAXIMUM
OVERALL WIDTH: 28.2 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 9.6 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THREAD SERIES DESIGNATOR: UNC
TRANSFER RATIO: 10.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
BLW89
TRANSISTOR
NSN, MFG P/N
5961012479483
NSN
5961-01-247-9483
MFG
PHILIPS CIRCUIT ASSEMBLIES
Description
CURRENT RATING PER CHARACTERISTIC: 0.32 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL HEIGHT: 17.6 MILLIMETERS MAXIMUM
OVERALL LENGTH: 28.2 MILLIMETERS MAXIMUM
OVERALL WIDTH: 28.2 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 9.6 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THREAD SERIES DESIGNATOR: UNC
TRANSFER RATIO: 10.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
PT9700
TRANSISTOR
NSN, MFG P/N
5961012479483
NSN
5961-01-247-9483
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 0.32 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL HEIGHT: 17.6 MILLIMETERS MAXIMUM
OVERALL LENGTH: 28.2 MILLIMETERS MAXIMUM
OVERALL WIDTH: 28.2 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 9.6 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THREAD SERIES DESIGNATOR: UNC
TRANSFER RATIO: 10.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
0N370523-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012479485
NSN
5961-01-247-9485
0N370523-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012479485
NSN
5961-01-247-9485
MFG
NATIONAL SECURITY AGENCY
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE P-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.786 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.210 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
D7254
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012479485
NSN
5961-01-247-9485
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE P-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.786 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.210 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
VQ7254P-5
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012479485
NSN
5961-01-247-9485
VQ7254P-5
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012479485
NSN
5961-01-247-9485
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE P-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.786 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.210 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
2224667
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012479833
NSN
5961-01-247-9833
MFG
ITT CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MJ10202
TRANSISTOR
NSN, MFG P/N
5961012480024
NSN
5961-01-248-0024
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED STUD
OVERALL HEIGHT: 1.050 INCHES MAXIMUM
OVERALL LENGTH: 2.090 INCHES MINIMUM AND 2.120 INCHES MAXIMUM
OVERALL WIDTH: 2.180 INCHES MINIMUM AND 2.220 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 WATTS NOMINAL AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 NOMINAL COLLECTOR TO BASE VOLTAGE, DC AND 200.0 NOMINAL COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 300.0 NOMINAL COLLECTOR-TO-EMITTER SUBSTAINING VOLTAGE, RESISTANCE BETWEEN BASE AND EMITTER
Related Searches:
ND8T11W-5H
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012480025
NSN
5961-01-248-0025
ND8T11W-5H
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012480025
NSN
5961-01-248-0025
MFG
CALIFORNIA EASTERN LABS
Description
CURRENT RATING PER CHARACTERISTIC: 240.00 MILLIAMPERES MAXIMUM PEAK POINT CURRENT
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 2.300 INCHES MAXIMUM
OVERALL LENGTH: 3.100 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 3.3 WATTS NOMINAL SMALL-SIGNAL OUTPUT POWER, COMMON-COLLECTOR
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 MAXIMUM REVERSE VOLTAGE, AVERAGE