My Quote Request
5961-01-250-5781
20 Products
FN4751
TRANSISTOR
NSN, MFG P/N
5961012505781
NSN
5961-01-250-5781
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR
Related Searches:
ST8505
TRANSISTOR
NSN, MFG P/N
5961012501587
NSN
5961-01-250-1587
MFG
SEMICONDUCTOR TECHNOLOGY INC DBA S T I
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT WITH SPECIFIED VOLTAGE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 175.0 WATTS MINIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 7.5 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1400.0 MINIMUM COLLECTOR-TO-EMITTER, WITH VOLTAGE BETWEEN BASE AND EMITTER AND 800.0 MINIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MINIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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B4034079-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012502464
NSN
5961-01-250-2464
B4034079-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012502464
NSN
5961-01-250-2464
MFG
DEPARTMENT OF THE ARMY HQ UNITED STATES ARMY COMMUNICATIONS RESEARCH AND DEVELOPMENT COMMAND
Description
III END ITEM IDENTIFICATION: AN/GSC-52
Related Searches:
6726.41 ITEM 9.2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012503231
NSN
5961-01-250-3231
6726.41 ITEM 9.2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012503231
NSN
5961-01-250-3231
MFG
SHIPS MACHINERY INTERNATIONAL INC. DBA SMI
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2N5090
TRANSISTOR
NSN, MFG P/N
5961012503389
NSN
5961-01-250-3389
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 0.40 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-60
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.935 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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912342-1
TRANSISTOR
NSN, MFG P/N
5961012503389
NSN
5961-01-250-3389
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
CURRENT RATING PER CHARACTERISTIC: 0.40 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-60
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.935 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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94-1484
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012503395
NSN
5961-01-250-3395
94-1484
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012503395
NSN
5961-01-250-3395
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -3.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: MO-036AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.316 INCHES NOMINAL
OVERALL LENGTH: 0.758 INCHES NOMINAL
OVERALL WIDTH: 0.312 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.138 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
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B87T0015-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012503395
NSN
5961-01-250-3395
B87T0015-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012503395
NSN
5961-01-250-3395
MFG
MCDONNELL DOUGLAS CORP MCDONNELL DOUGLAS ELECTRONIC SYSTEMS CO
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -3.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: MO-036AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.316 INCHES NOMINAL
OVERALL LENGTH: 0.758 INCHES NOMINAL
OVERALL WIDTH: 0.312 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.138 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
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BZX79B36
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012503828
NSN
5961-01-250-3828
MFG
PHILIPS SEMICONDUCTORS INC
Description
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0
Related Searches:
BZX79B27
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012503829
NSN
5961-01-250-3829
MFG
PHILIPS SEMICONDUCTORS INC
Description
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0
Related Searches:
BZX79B75
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012503830
NSN
5961-01-250-3830
MFG
PHILIPS SEMICONDUCTORS INC
Description
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0
Related Searches:
HTR-2000
TRANSISTOR
NSN, MFG P/N
5961012503980
NSN
5961-01-250-3980
MFG
HUNTRON INC DBA HUNTRON INSTRUMENTS
Description
TRANSISTOR
Related Searches:
675-22891-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012505578
NSN
5961-01-250-5578
675-22891-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012505578
NSN
5961-01-250-5578
MFG
THE BOEING COMPANY DBA BOEING
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MAJOR COMPONENTS: PRINTED WIRING BD 1,EIGHT DIODESJANTX1N5656A
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
675-22892-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012505579
NSN
5961-01-250-5579
675-22892-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012505579
NSN
5961-01-250-5579
MFG
THE BOEING COMPANY DBA BOEING
Description
III END ITEM IDENTIFICATION: B-52 ACFT
MAJOR COMPONENTS: PRINTED WIRING BOARD 1,DIODES JANTX1N6062A 72
Related Searches:
300555550
TRANSISTOR
NSN, MFG P/N
5961012505778
NSN
5961-01-250-5778
MFG
GULTON-STATHAM TRANSDUCERS INC
Description
TRANSISTOR
Related Searches:
P1087-18
TRANSISTOR
NSN, MFG P/N
5961012505778
NSN
5961-01-250-5778
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR
Related Searches:
200104410
TRANSISTOR
NSN, MFG P/N
5961012505779
NSN
5961-01-250-5779
MFG
SCHLUMBERGER INDUSTRIES SA EQUIPEMENTS DE TEST AUTOMATIQUES
Description
TRANSISTOR
Related Searches:
300555910
TRANSISTOR
NSN, MFG P/N
5961012505779
NSN
5961-01-250-5779
MFG
GULTON-STATHAM TRANSDUCERS INC
Description
TRANSISTOR
Related Searches:
U441
TRANSISTOR
NSN, MFG P/N
5961012505779
NSN
5961-01-250-5779
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR
Related Searches:
C5072912
TRANSISTOR
NSN, MFG P/N
5961012505781
NSN
5961-01-250-5781
MFG
AUTOMOTIVE FINISHES INC
Description
TRANSISTOR