My Quote Request
5961-01-251-7481
20 Products
1N750A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012517481
NSN
5961-01-251-7481
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N750A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012517481
NSN
5961-01-251-7481
MFG
MOTOROLA SEMICONDUCTOR PRODUCTS INC SUB OF MOTOROLA INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JAN2N6782
TRANSISTOR
NSN, MFG P/N
5961012517679
NSN
5961-01-251-7679
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 3.50 AMPERES NOMINAL DRAIN CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N6782
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/556
OVERALL DIAMETER: 0.360 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL DRAIN TO SOURCE VOLTAGE
Related Searches:
2808538-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012517838
NSN
5961-01-251-7838
2808538-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012517838
NSN
5961-01-251-7838
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
III END ITEM IDENTIFICATION: F-15 ACFT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
Related Searches:
MHQ3467/883B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012517838
NSN
5961-01-251-7838
MHQ3467/883B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012517838
NSN
5961-01-251-7838
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
III END ITEM IDENTIFICATION: F-15 ACFT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
Related Searches:
TSQ3467/TX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012517838
NSN
5961-01-251-7838
TSQ3467/TX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012517838
NSN
5961-01-251-7838
MFG
MICROSEMI CORP.- MASSACHUSETTS DBA MICROSEMI LAWRENCE
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
III END ITEM IDENTIFICATION: F-15 ACFT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
Related Searches:
932041-3
TRANSISTOR
NSN, MFG P/N
5961012518082
NSN
5961-01-251-8082
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
TRANSISTOR
Related Searches:
NS63602
TRANSISTOR
NSN, MFG P/N
5961012518082
NSN
5961-01-251-8082
MFG
NATIONAL SEMICONDUCTOR CORP
Description
TRANSISTOR
Related Searches:
SGD3728
TRANSISTOR
NSN, MFG P/N
5961012518082
NSN
5961-01-251-8082
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
TRANSISTOR
Related Searches:
652-1185
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012519511
NSN
5961-01-251-9511
652-1185
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012519511
NSN
5961-01-251-9511
MFG
MICRO USPD INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
V22-9-5532-001-652-1185
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012519511
NSN
5961-01-251-9511
V22-9-5532-001-652-1185
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012519511
NSN
5961-01-251-9511
MFG
ESW GMBH
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
UTX1291
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012519557
NSN
5961-01-251-9557
MFG
MICRO USPD INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
V22-9-5532-410UTX1291
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012519557
NSN
5961-01-251-9557
V22-9-5532-410UTX1291
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012519557
NSN
5961-01-251-9557
MFG
ESW GMBH
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
T1P115
TRANSISTOR
NSN, MFG P/N
5961012519627
NSN
5961-01-251-9627
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: BRACKET
OVERALL HEIGHT: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
OVERALL LENGTH: 0.630 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.540 INCHES MINIMUM AND 0.580 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
VN1115N2
TRANSISTOR
NSN, MFG P/N
5961012520150
NSN
5961-01-252-0150
MFG
SUPERTEX INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MINIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 160.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
912370-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012520268
NSN
5961-01-252-0268
912370-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012520268
NSN
5961-01-252-0268
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TRANSFER RATIO: 30.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 165.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
Related Searches:
PT9144
TRANSISTOR
NSN, MFG P/N
5961012520544
NSN
5961-01-252-0544
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
TRANSISTOR
Related Searches:
40996-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012521008
NSN
5961-01-252-1008
40996-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012521008
NSN
5961-01-252-1008
MFG
EDO WESTERN CORPORATION DBA EDO ELECTRO CERAMIC PRODUCTS
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 55.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 1.125 INCHES NOMINAL
OVERALL LENGTH: 5.120 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
Related Searches:
C23174
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012521008
NSN
5961-01-252-1008
C23174
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012521008
NSN
5961-01-252-1008
MFG
INTERSIL CORPORATION
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 55.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 1.125 INCHES NOMINAL
OVERALL LENGTH: 5.120 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
Related Searches:
40996-3
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012521009
NSN
5961-01-252-1009
40996-3
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012521009
NSN
5961-01-252-1009
MFG
EDO WESTERN CORPORATION DBA EDO ELECTRO CERAMIC PRODUCTS
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 55.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 1.125 INCHES NOMINAL
OVERALL LENGTH: 5.120 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR