My Quote Request
5961-01-254-4521
20 Products
SFE1607H
TRANSISTOR
NSN, MFG P/N
5961012544521
NSN
5961-01-254-4521
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: DC/AC INVERTER
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-21045-105
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
2N4857
TRANSISTOR
NSN, MFG P/N
5961012544521
NSN
5961-01-254-4521
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: DC/AC INVERTER
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-21045-105
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
863G1200085-109
TRANSISTOR
NSN, MFG P/N
5961012544522
NSN
5961-01-254-4522
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN SPACE SYSTEMS COMPANY
Description
III END ITEM IDENTIFICATION: IFSS AVE SIMULATOR
SPECIAL FEATURES: ONE JANTXV2N2484 TRANSISTOR AND ONE STCC640094-1 ADAPTER PLUG
Related Searches:
3006847
TRANSISTOR
NSN, MFG P/N
5961012544523
NSN
5961-01-254-4523
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM ON-STATE DRAIN CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL DIAMETER: 0.181 INCHES MINIMUM AND 0.196 INCHES MAXIMUM
OVERALL HEIGHT: 0.074 INCHES MINIMUM AND 0.082 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.5 MAXIMUM PEAK-POINT VOLTAGE
Related Searches:
BF910
TRANSISTOR
NSN, MFG P/N
5961012544523
NSN
5961-01-254-4523
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM ON-STATE DRAIN CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL DIAMETER: 0.181 INCHES MINIMUM AND 0.196 INCHES MAXIMUM
OVERALL HEIGHT: 0.074 INCHES MINIMUM AND 0.082 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.5 MAXIMUM PEAK-POINT VOLTAGE
Related Searches:
1001454
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012544919
NSN
5961-01-254-4919
MFG
TLD ACE CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SK3043A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012544919
NSN
5961-01-254-4919
MFG
RCA CORP DISTRIBUTION AND SPECIAL PRODUCTS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1001338
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012544920
NSN
5961-01-254-4920
MFG
TLD ACE CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N6284
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012544920
NSN
5961-01-254-4920
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
204-0208-020
TRANSISTOR
NSN, MFG P/N
5961012545043
NSN
5961-01-254-5043
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3227
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/317
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/317 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE,
~1: STATIC, COLLECTOR OPEN
Related Searches:
2137768G001
TRANSISTOR
NSN, MFG P/N
5961012545043
NSN
5961-01-254-5043
MFG
ITT CORPORATION
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3227
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/317
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/317 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE,
~1: STATIC, COLLECTOR OPEN
Related Searches:
JAN2N3227
TRANSISTOR
NSN, MFG P/N
5961012545043
NSN
5961-01-254-5043
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3227
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/317
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/317 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE,
~1: STATIC, COLLECTOR OPEN
Related Searches:
A190N
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012545145
NSN
5961-01-254-5145
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 8.839 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
A190NX42
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012545145
NSN
5961-01-254-5145
A190NX42
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012545145
NSN
5961-01-254-5145
MFG
MARTEK POWER INCORPORATED
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 8.839 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
1033890-1
TRANSISTOR
NSN, MFG P/N
5961012546165
NSN
5961-01-254-6165
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 1.20 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
VN35AB
TRANSISTOR
NSN, MFG P/N
5961012546165
NSN
5961-01-254-6165
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 1.20 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
9999-7225
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012546166
NSN
5961-01-254-6166
MFG
FLIGHTLINE ELECTRONICS INC. DBA ULTRA ELEC FLIGHTLINE SYSTEMS DIV ULTRA ELECTRONICS FLIGHTLINE SYSTEMS
Description
CAPACITANCE RATING IN PICOFARADS: 70.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 48.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 40.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 40.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
MBR-040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012546166
NSN
5961-01-254-6166
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CAPACITANCE RATING IN PICOFARADS: 70.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 48.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 40.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 40.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
150KR30A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012547053
NSN
5961-01-254-7053
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 3140.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: REVERSE POLARITY
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 2.320 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.060 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD QUANTITY PER INCH: 24
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 1.2 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
GEPSP206
TRANSISTOR
NSN, MFG P/N
5961012548381
NSN
5961-01-254-8381
MFG
GOODRICH LIGHTING SYSTEMS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 0.40 AMPERES MAXIMUM DRAIN CURRENT
DESIGN CONTROL REFERENCE: IRFD1Z3
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 59993
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.280 INCHES MAXIMUM
OVERALL WIDTH: 0.198 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 4-PIN,DUAL IN-LINE PACKAGE
TERMINAL LENGTH: 0.150 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE