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5961-01-254-8381
20 Products
IRFD1Z3
TRANSISTOR
NSN, MFG P/N
5961012548381
NSN
5961-01-254-8381
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 0.40 AMPERES MAXIMUM DRAIN CURRENT
DESIGN CONTROL REFERENCE: IRFD1Z3
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 59993
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.280 INCHES MAXIMUM
OVERALL WIDTH: 0.198 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 4-PIN,DUAL IN-LINE PACKAGE
TERMINAL LENGTH: 0.150 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012548465
NSN
5961-01-254-8465
28021-05-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012548465
NSN
5961-01-254-8465
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
SEMICONDUCTOR DEVICE,DIODE
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15-01999-00
TRANSISTOR
NSN, MFG P/N
5961012549081
NSN
5961-01-254-9081
MFG
COMPAQ FEDERAL LLC
Description
TRANSISTOR
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BYW92-150U
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012549082
NSN
5961-01-254-9082
BYW92-150U
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012549082
NSN
5961-01-254-9082
MFG
PHILIPS SEMICONDUCTORS INC
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 36.9 MILLIMETERS MAXIMUM
OVERALL WIDTH ACROSS FLATS: 17.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 0.8 MAXIMUM FORWARD VOLTAGE, DC AND 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 150.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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NSN, MFG P/N
5961012549082
NSN
5961-01-254-9082
MFG
SEMICON COMPONENTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 36.9 MILLIMETERS MAXIMUM
OVERALL WIDTH ACROSS FLATS: 17.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 0.8 MAXIMUM FORWARD VOLTAGE, DC AND 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 150.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012549084
NSN
5961-01-254-9084
MFG
COMPAQ FEDERAL LLC
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012549085
NSN
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MFG
COMPAQ FEDERAL LLC
Description
SEMICONDUCTOR DEVICE,DIODE
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NSN, MFG P/N
5961012549089
NSN
5961-01-254-9089
11-14377-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012549089
NSN
5961-01-254-9089
MFG
COMPAQ FEDERAL LLC
Description
SEMICONDUCTOR DEVICE,DIODE
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11-14117-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012549090
NSN
5961-01-254-9090
11-14117-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012549090
NSN
5961-01-254-9090
MFG
COMPAQ FEDERAL LLC
Description
SEMICONDUCTOR DEVICE,DIODE
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11-16824-01
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NSN, MFG P/N
5961012549091
NSN
5961-01-254-9091
11-16824-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012549091
NSN
5961-01-254-9091
MFG
COMPAQ FEDERAL LLC
Description
SEMICONDUCTOR DEVICE,DIODE
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NSN, MFG P/N
5961012549254
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012549254
NSN
5961-01-254-9254
MFG
BELL HELICOPTER TEXTRON INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: INSULATOR
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 3.500 INCHES NOMINAL AND 4.900 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
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200-0001
TRANSISTOR
NSN, MFG P/N
5961012550053
NSN
5961-01-255-0053
MFG
DIGITAL DEVELOPMENT CORP
Description
TRANSISTOR
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TRANSISTOR
NSN, MFG P/N
5961012550054
NSN
5961-01-255-0054
MFG
DIGITAL DEVELOPMENT CORP
Description
TRANSISTOR
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200-0013
TRANSISTOR
NSN, MFG P/N
5961012550055
NSN
5961-01-255-0055
MFG
DIGITAL DEVELOPMENT CORP
Description
TRANSISTOR
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TRANSISTOR
NSN, MFG P/N
5961012550056
NSN
5961-01-255-0056
MFG
DDC-PERTEC
Description
TRANSISTOR
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TRANSISTOR
NSN, MFG P/N
5961012550057
NSN
5961-01-255-0057
MFG
DIGITAL DEVELOPMENT CORP
Description
TRANSISTOR
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TRANSISTOR
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5961012550059
NSN
5961-01-255-0059
MFG
DDC-PERTEC
Description
TRANSISTOR
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TRANSISTOR
NSN, MFG P/N
5961012550060
NSN
5961-01-255-0060
MFG
DIGITAL DEVELOPMENT CORP
Description
TRANSISTOR
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200-3772
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NSN, MFG P/N
5961012550061
NSN
5961-01-255-0061
MFG
DDC-PERTEC
Description
TRANSISTOR
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5961012550063
NSN
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MFG
DDC-PERTEC
Description
TRANSISTOR