My Quote Request
5961-01-258-7605
20 Products
8463A01-PC93
TRANSISTOR
NSN, MFG P/N
5961012587605
NSN
5961-01-258-7605
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 8463A01-PC93
MANUFACTURERS CODE: 04804
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
SPECIAL FEATURES: DEVICE TYPE MOSFET N CHANNEL ENHANCEMENT MODE
THE MANUFACTURERS DATA:
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G260021-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012585454
NSN
5961-01-258-5454
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES MAXIMUM PEAK PULSE CURRENT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 KILOWATTS NOMINAL PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 1.110 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
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VSZ902002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012585454
NSN
5961-01-258-5454
MFG
E2V TECHNOLOGIES UK LIMITED
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES MAXIMUM PEAK PULSE CURRENT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 KILOWATTS NOMINAL PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 1.110 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
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95-00575-001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012585631
NSN
5961-01-258-5631
95-00575-001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012585631
NSN
5961-01-258-5631
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
RECTIFIER,SEMICONDUCTOR DEVICE
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95-00313-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012585696
NSN
5961-01-258-5696
95-00313-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012585696
NSN
5961-01-258-5696
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
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162050-001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012585711
NSN
5961-01-258-5711
162050-001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012585711
NSN
5961-01-258-5711
MFG
HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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MA4P259
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012585714
NSN
5961-01-258-5714
MA4P259
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012585714
NSN
5961-01-258-5714
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
SEMICONDUCTOR DEVICE ASSEMBLY
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VA70-0143-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012585714
NSN
5961-01-258-5714
VA70-0143-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012585714
NSN
5961-01-258-5714
MFG
SELEX GALILEO LTD
Description
SEMICONDUCTOR DEVICE ASSEMBLY
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MA4-P270
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012585715
NSN
5961-01-258-5715
MA4-P270
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012585715
NSN
5961-01-258-5715
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
SEMICONDUCTOR DEVICE ASSEMBLY
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2N6322
TRANSISTOR
NSN, MFG P/N
5961012585848
NSN
5961-01-258-5848
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM BASE CURRENT, DC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.312 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
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SC146M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012585850
NSN
5961-01-258-5850
SC146M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012585850
NSN
5961-01-258-5850
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
OVERALL HEIGHT: 4.8 MILLIMETERS MAXIMUM
OVERALL LENGTH: 10.5 MILLIMETERS MAXIMUM
OVERALL WIDTH: 9.0 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS NOMINAL PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
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107P2012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012586393
NSN
5961-01-258-6393
MFG
SAFETY-KLEEN CORP
Description
SPECIAL FEATURES: REPAIR PART FOR NSN 6525-01-256-7020; SILVER RECOVERY APPARATUS; MODEL NO. TSR-21; BY DREW REFINING CO.
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NAVAL REPAIR PART
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012586393
NSN
5961-01-258-6393
NAVAL REPAIR PART
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012586393
NSN
5961-01-258-6393
MFG
NAVAL MEDICAL MATERIAL SUPPORT COMMAND DETACHMENT
Description
SPECIAL FEATURES: REPAIR PART FOR NSN 6525-01-256-7020; SILVER RECOVERY APPARATUS; MODEL NO. TSR-21; BY DREW REFINING CO.
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355503
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012586897
NSN
5961-01-258-6897
MFG
TANDBERG EDUCATIONAL LTD
Description
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-15
SEMICONDUCTOR MATERIAL: SILICON
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RGP15J
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012586897
NSN
5961-01-258-6897
MFG
GENERAL SEMICONDUCTOR INC
Description
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-15
SEMICONDUCTOR MATERIAL: SILICON
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86A355
TRANSISTOR
NSN, MFG P/N
5961012587363
NSN
5961-01-258-7363
MFG
SHURE BROS INC
Description
TRANSISTOR
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86A364
TRANSISTOR
NSN, MFG P/N
5961012587364
NSN
5961-01-258-7364
MFG
SHURE BROS INC
Description
TRANSISTOR
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2SC2344
TRANSISTOR
NSN, MFG P/N
5961012587365
NSN
5961-01-258-7365
MFG
SANYO ELECTRIC CO. LTD
Description
TRANSISTOR
Related Searches:
86A8300
TRANSISTOR
NSN, MFG P/N
5961012587365
NSN
5961-01-258-7365
MFG
SHURE BROS INC
Description
TRANSISTOR
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1855-0453
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012587458
NSN
5961-01-258-7458
1855-0453
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012587458
NSN
5961-01-258-7458
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-78
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.320 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.018 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR