My Quote Request
5961-01-262-7078
20 Products
1.5B-2R
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012627078
NSN
5961-01-262-7078
1.5B-2R
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012627078
NSN
5961-01-262-7078
MFG
UNITED PAGE INC
Description
MATERIAL: SILICON
Related Searches:
SNF1231
TRANSISTOR
NSN, MFG P/N
5961012626048
NSN
5961-01-262-6048
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: 1440-01-217-2334
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12325157
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 1.330 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 19200-12325157 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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UFNH1001
TRANSISTOR
NSN, MFG P/N
5961012626048
NSN
5961-01-262-6048
MFG
MICRO USPD INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: 1440-01-217-2334
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12325157
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 1.330 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 19200-12325157 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
V11422
TRANSISTOR
NSN, MFG P/N
5961012626048
NSN
5961-01-262-6048
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: 1440-01-217-2334
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12325157
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 1.330 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 19200-12325157 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
SM-C-808538-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012626049
NSN
5961-01-262-6049
SM-C-808538-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012626049
NSN
5961-01-262-6049
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
DESIGN CONTROL REFERENCE: SM-C-808538-1
III END ITEM IDENTIFICATION: 5855-01-249-0717
MANUFACTURERS CODE: 80063
TEST DATA DOCUMENT: 80063-SM-C-808538-1 DRAWING
THE MANUFACTURERS DATA:
Related Searches:
12325177
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012626052
NSN
5961-01-262-6052
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
III END ITEM IDENTIFICATION: 1440-01-217-2331
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12325177
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS
TEST DATA DOCUMENT: 19200-12325177 DRAWING
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95-0035
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012626052
NSN
5961-01-262-6052
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
III END ITEM IDENTIFICATION: 1440-01-217-2331
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12325177
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS
TEST DATA DOCUMENT: 19200-12325177 DRAWING
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SEN 1938
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012626052
NSN
5961-01-262-6052
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
III END ITEM IDENTIFICATION: 1440-01-217-2331
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12325177
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS
TEST DATA DOCUMENT: 19200-12325177 DRAWING
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SPD1014
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012626052
NSN
5961-01-262-6052
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
III END ITEM IDENTIFICATION: 1440-01-217-2331
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12325177
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS
TEST DATA DOCUMENT: 19200-12325177 DRAWING
Related Searches:
12325178
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012626053
NSN
5961-01-262-6053
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 70.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 19200
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 12325178
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
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14011973-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012626053
NSN
5961-01-262-6053
14011973-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012626053
NSN
5961-01-262-6053
MFG
SAGEM DEFENSE SECURITE - GROUPE SAFR AN
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 70.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 19200
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 12325178
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
403206
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012626053
NSN
5961-01-262-6053
MFG
TEAM - COBHAM AVIONICS
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 70.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 19200
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 12325178
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
81C554M001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012626053
NSN
5961-01-262-6053
81C554M001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012626053
NSN
5961-01-262-6053
MFG
SELEX SISTEMI INTEGRATI SPA
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 70.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 19200
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 12325178
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
PP6267
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012626053
NSN
5961-01-262-6053
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 70.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 19200
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 12325178
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
UES1306
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012626053
NSN
5961-01-262-6053
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 70.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 19200
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 12325178
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
H989020-001B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012626054
NSN
5961-01-262-6054
H989020-001B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012626054
NSN
5961-01-262-6054
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: H989020-001B
III END ITEM IDENTIFICATION: 1440-01-215-4868
MANUFACTURERS CODE: 82577
TEST DATA DOCUMENT: 82577-H989020-001B DRAWING
THE MANUFACTURERS DATA:
Related Searches:
700418
TRANSISTOR
NSN, MFG P/N
5961012626947
NSN
5961-01-262-6947
MFG
DATAMETRICS CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 32.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N6796
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205AF
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/557
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/557 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
JANTXV2N6796
TRANSISTOR
NSN, MFG P/N
5961012626947
NSN
5961-01-262-6947
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 32.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N6796
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205AF
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/557
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/557 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
13084424
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012626950
NSN
5961-01-262-6950
MFG
PROGRAM MANAGER ADVANCED ATTACK HELICOPTER BARCOM AMCPM-AAH
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 120.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.170 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 300 NANOSECOND MAX REVERSE RECOVERY TIME
SPECIFICATION/STANDARD DATA: 72737-13084424 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 58260-13084424 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 37.5 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
RX258
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012626950
NSN
5961-01-262-6950
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 120.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.170 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 300 NANOSECOND MAX REVERSE RECOVERY TIME
SPECIFICATION/STANDARD DATA: 72737-13084424 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 58260-13084424 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 37.5 MAXIMUM FORWARD VOLTAGE, DC