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5961-01-267-3565
20 Products
12043-0092
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012673565
NSN
5961-01-267-3565
12043-0092
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012673565
NSN
5961-01-267-3565
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
28700180
TRANSISTOR
NSN, MFG P/N
5961012672277
NSN
5961-01-267-2277
MFG
ADVANCED ANALOG INC. DBA INTERNATIONAL RECTIFIER
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
934A172-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012672278
NSN
5961-01-267-2278
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
934A904-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012672278
NSN
5961-01-267-2278
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
D8051EM
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012672278
NSN
5961-01-267-2278
MFG
MICROSEMI CORP-COLORADO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
934A906-3
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012672279
NSN
5961-01-267-2279
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
1884-0268
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012672280
NSN
5961-01-267-2280
1884-0268
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012672280
NSN
5961-01-267-2280
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 300.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
INCLOSURE MATERIAL: METAL AND PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 129.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 4.82 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.51 MILLIMETERS MAXIMUM
OVERALL WIDTH: 10.66 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM AVERAGE GATE POWER DISSIPATION AND 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 14.73 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
2N6508
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012672280
NSN
5961-01-267-2280
2N6508
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012672280
NSN
5961-01-267-2280
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 300.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
INCLOSURE MATERIAL: METAL AND PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 129.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 4.82 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.51 MILLIMETERS MAXIMUM
OVERALL WIDTH: 10.66 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM AVERAGE GATE POWER DISSIPATION AND 20.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 14.73 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
2640179
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012672417
NSN
5961-01-267-2417
2640179
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012672417
NSN
5961-01-267-2417
MFG
ALLIANT TECHSYSTEMS INC . DIV DEFENSE ELECTRONICS SYSTEMS
Description
III END ITEM IDENTIFICATION: LGM30 ATS REHOST ITA
MAJOR COMPONENTS: PRINTED WIRING BOARD 1,FIFTY EIGHT (58) DIODES
Related Searches:
2639876
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012672418
NSN
5961-01-267-2418
2639876
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012672418
NSN
5961-01-267-2418
MFG
ALLIANT TECHSYSTEMS INC . DIV DEFENSE ELECTRONICS SYSTEMS
Description
III END ITEM IDENTIFICATION: LGM30 ATS REHOST ITA
MAJOR COMPONENTS: PRINTED WIRING BOARD 1,THIRTY ONE (31) DIODES
Related Searches:
3110278-1
TRANSISTOR
NSN, MFG P/N
5961012673179
NSN
5961-01-267-3179
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: 3110278-1
III END ITEM IDENTIFICATION: AIRCRAFT MODEL S-3
MANUFACTURERS CODE: 82577
THE MANUFACTURERS DATA:
Related Searches:
HLD4067A
TRANSISTOR REPL KIT
NSN, MFG P/N
5961012673487
NSN
5961-01-267-3487
MFG
MOTOROLA COMMUNICATIONS GROUP PARTS DEPT DIV OF MOTOROLA INC
Description
TRANSISTOR REPL KIT
Related Searches:
48-00869726
TRANSISTOR
NSN, MFG P/N
5961012673559
NSN
5961-01-267-3559
MFG
MOTOROLA COMMUNICATIONS GROUP PARTS DEPT DIV OF MOTOROLA INC
Description
TRANSISTOR
Related Searches:
12050-0043
TRANSISTOR
NSN, MFG P/N
5961012673560
NSN
5961-01-267-3560
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
12062-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012673562
NSN
5961-01-267-3562
12062-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012673562
NSN
5961-01-267-3562
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N23C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012673562
NSN
5961-01-267-3562
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
14012-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012673563
NSN
5961-01-267-3563
14012-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012673563
NSN
5961-01-267-3563
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
VJ448XM
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012673563
NSN
5961-01-267-3563
MFG
MICRO QUALITY SEMICONDUCTOR INC SUB OF MICROSEMI CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
12043-0173
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012673564
NSN
5961-01-267-3564
12043-0173
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012673564
NSN
5961-01-267-3564
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N4733A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012673564
NSN
5961-01-267-3564
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
SEMICONDUCTOR DEVICE,DIODE