My Quote Request
5961-01-275-4632
20 Products
RS3892
TRANSISTOR
NSN, MFG P/N
5961012754632
NSN
5961-01-275-4632
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: LGM 30
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
2N2605
TRANSISTOR
NSN, MFG P/N
5961012754632
NSN
5961-01-275-4632
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: LGM 30
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
13-1330010-1
TRANSISTOR
NSN, MFG P/N
5961012754633
NSN
5961-01-275-4633
MFG
GTE GOVERNMENT SYSTEMS CORP STRATEGIC SYSTEMS DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: LGM 30
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
2N2484
TRANSISTOR
NSN, MFG P/N
5961012754633
NSN
5961-01-275-4633
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: LGM 30
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
RS3893
TRANSISTOR
NSN, MFG P/N
5961012754633
NSN
5961-01-275-4633
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: LGM 30
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
13-1330018-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012754635
NSN
5961-01-275-4635
13-1330018-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012754635
NSN
5961-01-275-4635
MFG
GTE GOVERNMENT SYSTEMS CORP STRATEGIC SYSTEMS DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: LGM 30
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
1N2999B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012754635
NSN
5961-01-275-4635
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: LGM 30
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
DZ860710C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012754635
NSN
5961-01-275-4635
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: LGM 30
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
13-1330018-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012754636
NSN
5961-01-275-4636
13-1330018-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012754636
NSN
5961-01-275-4636
MFG
GTE GOVERNMENT SYSTEMS CORP STRATEGIC SYSTEMS DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: LGM 30
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
1N3000B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012754636
NSN
5961-01-275-4636
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: LGM 30
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
DZ860710D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012754636
NSN
5961-01-275-4636
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: LGM 30
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
13-133018-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012754637
NSN
5961-01-275-4637
13-133018-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012754637
NSN
5961-01-275-4637
MFG
GTE GOVERNMENT SYSTEMS CORP STRATEGIC SYSTEMS DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: LGM 30
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
1N3008B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012754637
NSN
5961-01-275-4637
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: LGM 30
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
DZ860710E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012754637
NSN
5961-01-275-4637
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: LGM 30
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
V11249
TRANSISTOR
NSN, MFG P/N
5961012754887
NSN
5961-01-275-4887
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR
Related Searches:
2900427
TRANSISTOR
NSN, MFG P/N
5961012754888
NSN
5961-01-275-4888
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS AND 0.25 AMPERES MAXIMUM BASE CURRENT, INSTANTANEOUS
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
AS3121
TRANSISTOR
NSN, MFG P/N
5961012754888
NSN
5961-01-275-4888
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS AND 0.25 AMPERES MAXIMUM BASE CURRENT, INSTANTANEOUS
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
H050279
TRANSISTOR
NSN, MFG P/N
5961012754888
NSN
5961-01-275-4888
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS AND 0.25 AMPERES MAXIMUM BASE CURRENT, INSTANTANEOUS
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
ST371H
TRANSISTOR
NSN, MFG P/N
5961012754888
NSN
5961-01-275-4888
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS AND 0.25 AMPERES MAXIMUM BASE CURRENT, INSTANTANEOUS
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
14806-02-0070
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012754921
NSN
5961-01-275-4921
14806-02-0070
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012754921
NSN
5961-01-275-4921
MFG
WAVETEK RF PRODUCTS INC
Description
SEMICONDUCTOR DEVICE,DIODE