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5961-01-276-4711
20 Products
UES 1101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012764711
NSN
5961-01-276-4711
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
JAN2N2323S
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012762464
NSN
5961-01-276-2464
JAN2N2323S
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012762464
NSN
5961-01-276-2464
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 350.00 MICROAMPERES MAXIMUM GATE TRIGGER CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N2323S
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/276
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/276 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.1414 INCHES NOMINAL
TERMINAL LENGTH: 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
25A684
TRANSISTOR
NSN, MFG P/N
5961012762863
NSN
5961-01-276-2863
MFG
SONY ELECTRONICS INC
Description
TRANSISTOR
Related Searches:
2SC403C-5
TRANSISTOR
NSN, MFG P/N
5961012762864
NSN
5961-01-276-2864
MFG
SONY ELECTRONICS INC
Description
TRANSISTOR
Related Searches:
2SC641
TRANSISTOR
NSN, MFG P/N
5961012762866
NSN
5961-01-276-2866
MFG
SONY ELECTRONICS INC
Description
TRANSISTOR
Related Searches:
25K68
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012762867
NSN
5961-01-276-2867
MFG
SONY ELECTRONICS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
005-006129
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012762912
NSN
5961-01-276-2912
005-006129
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012762912
NSN
5961-01-276-2912
MFG
DATA GENERAL CORP M/S 9S17
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
2578G
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961012763665
NSN
5961-01-276-3665
MFG
LOCKHEED MARTIN SIPPICAN INC. DIV LOCKHEED MARTIN MARION USE CAGE CODE 16848 FOR CATALOGING.
Description
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: CADMIUM SELENIDE
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
CK2046
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961012763665
NSN
5961-01-276-3665
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: CADMIUM SELENIDE
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
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188343-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012763682
NSN
5961-01-276-3682
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
CAPACITANCE RATING IN PICOFARADS: 3.0 MAXIMUM
INCLOSURE MATERIAL: GLASS OR PLASTIC
MOUNTING METHOD: TERMINAL
SPECIAL FEATURES: RED DOT
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9132-1031-004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012763684
NSN
5961-01-276-3684
9132-1031-004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012763684
NSN
5961-01-276-3684
MFG
BAE SYSTEMS INTEGRATED DEFENSE SOLUTIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
6651-113
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012764553
NSN
5961-01-276-4553
MFG
PICKER INTL INC
Description
DESIGN CONTROL REFERENCE: 6651-113
III END ITEM IDENTIFICATION: 6525-01-224-0194
III PURCHASE DESCRIPTION IDENTIFICATION: 47220-6651-113
MANUFACTURERS CODE: 47220
THE MANUFACTURERS DATA:
Related Searches:
6663-007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012764554
NSN
5961-01-276-4554
MFG
PICKER INTL INC
Description
DESIGN CONTROL REFERENCE: 6663-007
III END ITEM IDENTIFICATION: 6525-01-224-0194
III PURCHASE DESCRIPTION IDENTIFICATION: 47220-6663-007
MANUFACTURERS CODE: 47220
THE MANUFACTURERS DATA:
Related Searches:
6664-130
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012764555
NSN
5961-01-276-4555
MFG
PICKER INTL INC
Description
DESIGN CONTROL REFERENCE: 6664-130
III END ITEM IDENTIFICATION: 6525-01-224-0194
III PURCHASE DESCRIPTION IDENTIFICATION: 47220-6664-130
MANUFACTURERS CODE: 47220
THE MANUFACTURERS DATA:
Related Searches:
663-055
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012764556
NSN
5961-01-276-4556
MFG
PICKER INTL INC
Description
DESIGN CONTROL REFERENCE: 663-055
III END ITEM IDENTIFICATION: 6525-01-224-0194
III PURCHASE DESCRIPTION IDENTIFICATION: 47220-6663-055
MANUFACTURERS CODE: 47220
THE MANUFACTURERS DATA:
Related Searches:
2211878-0004
TRANSISTOR
NSN, MFG P/N
5961012764709
NSN
5961-01-276-4709
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FUNCTION FOR WHICH DESIGNED: AMPLIFIER AND GENERAL PURPOSE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.670 INCHES MINIMUM
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.145 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
MPS6652
TRANSISTOR
NSN, MFG P/N
5961012764709
NSN
5961-01-276-4709
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FUNCTION FOR WHICH DESIGNED: AMPLIFIER AND GENERAL PURPOSE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.670 INCHES MINIMUM
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.145 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
0996281-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012764711
NSN
5961-01-276-4711
0996281-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012764711
NSN
5961-01-276-4711
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
BYV27-100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012764711
NSN
5961-01-276-4711
MFG
PHILIPS FRANCE
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
QB1158A01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012764711
NSN
5961-01-276-4711
MFG
INEO DEFENSE SOPHIA ANTIPOLIS VALBONNE
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS