My Quote Request
5961-01-278-1447
20 Products
MJE270
TRANSISTOR
NSN, MFG P/N
5961012781447
NSN
5961-01-278-1447
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: MOUNTING HARDWARE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-225AA
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.425 INCHES MINIMUM AND 0.435 INCHES MAXIMUM
OVERALL WIDTH: 0.295 INCHES MINIMUM AND 0.305 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 1500.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED
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SK7203/6003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012776810
NSN
5961-01-277-6810
SK7203/6003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012776810
NSN
5961-01-277-6810
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 600.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: REVERSE POLARITY
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
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8027520-4-5
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012777103
NSN
5961-01-277-7103
8027520-4-5
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012777103
NSN
5961-01-277-7103
MFG
AIR FORCE LOGISTICS COMMAND 88 0SS OSE
Description
COMPONENT NAME AND QUANTITY: 5 SEMICONDUCTOR DEVICE DIODE
III END ITEM IDENTIFICATION: 1520-01-088-3669 HELICOPTER,CARGO-TRANSPORT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: CLIP
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
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CTJ420E005-513
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012777103
NSN
5961-01-277-7103
CTJ420E005-513
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012777103
NSN
5961-01-277-7103
MFG
DEUTSCH ENGINEERED CONNECTING DEVICES INC DBA DEFENSE AEROSPACE OPERATIONS DIV DEFENSE AEROSPACE OPERATIONS
Description
COMPONENT NAME AND QUANTITY: 5 SEMICONDUCTOR DEVICE DIODE
III END ITEM IDENTIFICATION: 1520-01-088-3669 HELICOPTER,CARGO-TRANSPORT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: CLIP
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
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6652-509
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012777890
NSN
5961-01-277-7890
MFG
PICKER INTL INC
Description
DESIGN CONTROL REFERENCE: 6652-509
III END ITEM IDENTIFICATION: 6525-01-224-0194
III PURCHASE DESCRIPTION IDENTIFICATION: 47220-06652-509
MANUFACTURERS CODE: 47220
THE MANUFACTURERS DATA:
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NSN, MFG P/N
5961012778173
NSN
5961-01-277-8173
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012778173
NSN
5961-01-277-8173
MFG
MICRO USPD INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.625 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.562 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
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SEMICONDUCTOR DEVICES,UNITIZED
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5961012778173
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5961-01-277-8173
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012778173
NSN
5961-01-277-8173
MFG
SELEX GALILEO LTD
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.625 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.562 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012778611
NSN
5961-01-277-8611
MFG
THALES AVIONICS SA
Description
COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 20.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 16 PIN
TRANSFER RATIO: 75.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN ALL TRANSISTOR
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NSN, MFG P/N
5961012778611
NSN
5961-01-277-8611
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012778611
NSN
5961-01-277-8611
MFG
INTERSIL CORPORATION
Description
COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 20.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 16 PIN
TRANSFER RATIO: 75.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN ALL TRANSISTOR
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012778921
NSN
5961-01-277-8921
13-1319516-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012778921
NSN
5961-01-277-8921
MFG
GTE GOVERNMENT SYSTEMS CORP STRATEGIC SYSTEMS DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: LGM-30
SPECIAL FEATURES: HARDNESS CRITICAL ITEM
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012778921
NSN
5961-01-277-8921
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: LGM-30
SPECIAL FEATURES: HARDNESS CRITICAL ITEM
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012778921
NSN
5961-01-277-8921
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: LGM-30
SPECIAL FEATURES: HARDNESS CRITICAL ITEM
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012778922
NSN
5961-01-277-8922
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
MANUFACTURERS CODE: 86360
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: D25018A
MOUNTING METHOD: BRACKET
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 PIN
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012778922
NSN
5961-01-277-8922
MFG
SOLITRON DEVICES INC.
Description
MANUFACTURERS CODE: 86360
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: D25018A
MOUNTING METHOD: BRACKET
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 PIN
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012778922
NSN
5961-01-277-8922
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV INFORMATION SYSTEMS - GERMANTOWN
Description
MANUFACTURERS CODE: 86360
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: D25018A
MOUNTING METHOD: BRACKET
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 PIN
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012778922
NSN
5961-01-277-8922
MFG
FREESCALE SEMICONDUCTOR INC.
Description
MANUFACTURERS CODE: 86360
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: D25018A
MOUNTING METHOD: BRACKET
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 PIN
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150-029599-002
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012780779
NSN
5961-01-278-0779
150-029599-002
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012780779
NSN
5961-01-278-0779
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
MAJOR COMPONENTS: SEMI-CONDUCTOR DEVICE DIODE 3
SPECIAL FEATURES: CONTAINS BERYLLIUM-DO NOT CRUSH,GRIND OR ABRADE,DISPOSAL BY BURIAL
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352250046979
TRANSISTOR
NSN, MFG P/N
5961012781446
NSN
5961-01-278-1446
MFG
THALES NEDERLAND
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 15.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 45.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
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LT1839
TRANSISTOR
NSN, MFG P/N
5961012781446
NSN
5961-01-278-1446
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 15.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 45.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
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840-000270-000
TRANSISTOR
NSN, MFG P/N
5961012781447
NSN
5961-01-278-1447
MFG
IMPATH NETWORKS INC
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: MOUNTING HARDWARE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-225AA
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.425 INCHES MINIMUM AND 0.435 INCHES MAXIMUM
OVERALL WIDTH: 0.295 INCHES MINIMUM AND 0.305 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 1500.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED