My Quote Request
5961-01-295-8532
20 Products
TIPL762A
TRANSISTOR
NSN, MFG P/N
5961012958532
NSN
5961-01-295-8532
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-218AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.182 INCHES NOMINAL
OVERALL LENGTH: 1.200 INCHES NOMINAL
OVERALL WIDTH: 0.600 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 120.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.470 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM COLLECTOR-TO-BASE VOLTAGE, INSTANTANEOUS AND 1000.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 10.0 MAXIMUM BASE TO EMITTER VOLTAGE, INSTANTANEOUS
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0N511738-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955404
NSN
5961-01-295-5404
0N511738-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955404
NSN
5961-01-295-5404
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
204-0039-030
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955479
NSN
5961-01-295-5479
204-0039-030
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955479
NSN
5961-01-295-5479
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL ON-STATE CURRENT, INSTANTANEOUS AND 250.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS AND 100.00 AMPERES MAXIMUM PEAK PULSE CURRENT
FEATURES PROVIDED: BURN IN
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.315 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 95105-204-0039-030 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS AND 8.33 MINIMUM BREAKDOWN VOLTAGE, DC AND 9.21 MAXIMUM BREAKDOWN VOLTAGE, DC
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GZ64410B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955479
NSN
5961-01-295-5479
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL ON-STATE CURRENT, INSTANTANEOUS AND 250.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS AND 100.00 AMPERES MAXIMUM PEAK PULSE CURRENT
FEATURES PROVIDED: BURN IN
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.315 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 95105-204-0039-030 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS AND 8.33 MINIMUM BREAKDOWN VOLTAGE, DC AND 9.21 MAXIMUM BREAKDOWN VOLTAGE, DC
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LC7.5A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955479
NSN
5961-01-295-5479
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL ON-STATE CURRENT, INSTANTANEOUS AND 250.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS AND 100.00 AMPERES MAXIMUM PEAK PULSE CURRENT
FEATURES PROVIDED: BURN IN
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.315 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 95105-204-0039-030 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS AND 8.33 MINIMUM BREAKDOWN VOLTAGE, DC AND 9.21 MAXIMUM BREAKDOWN VOLTAGE, DC
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6128302
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955480
NSN
5961-01-295-5480
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.438 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 53711-6128302 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNTHREADED HOLE
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, DC AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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S5258
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955480
NSN
5961-01-295-5480
MFG
SEMICON COMPONENTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.438 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 53711-6128302 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNTHREADED HOLE
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, DC AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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UTG8100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012955480
NSN
5961-01-295-5480
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.438 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 53711-6128302 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNTHREADED HOLE
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, DC AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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GES389G115V
TRANSISTOR
NSN, MFG P/N
5961012956378
NSN
5961-01-295-6378
MFG
POWER GENERAL CORP
Description
TRANSISTOR
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70HFR100S05
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012956380
NSN
5961-01-295-6380
70HFR100S05
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012956380
NSN
5961-01-295-6380
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,DIODE
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52CST33A0004
TRANSISTOR
NSN, MFG P/N
5961012956488
NSN
5961-01-295-6488
MFG
BOOKHAM TECHNOLOGY PLC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.229 INCHES MINIMUM AND 0.281 INCHES MAXIMUM
OVERALL LENGTH: 0.960 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 55.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 65.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 NOMINAL GATE TO SOURCE VOLTAGE
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CSS504215-1
TRANSISTOR
NSN, MFG P/N
5961012956488
NSN
5961-01-295-6488
MFG
SELEX COMMUNICATIONS LTD
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.229 INCHES MINIMUM AND 0.281 INCHES MAXIMUM
OVERALL LENGTH: 0.960 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 55.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 65.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 NOMINAL GATE TO SOURCE VOLTAGE
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MRF136
TRANSISTOR
NSN, MFG P/N
5961012956488
NSN
5961-01-295-6488
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.229 INCHES MINIMUM AND 0.281 INCHES MAXIMUM
OVERALL LENGTH: 0.960 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 55.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 65.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 NOMINAL GATE TO SOURCE VOLTAGE
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SDT7612
TRANSISTOR
NSN, MFG P/N
5961012956489
NSN
5961-01-295-6489
MFG
SOLITRON DEVICES INC.
Description
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 66.6 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.312 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 220.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 200.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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143146001-G01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012956490
NSN
5961-01-295-6490
143146001-G01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012956490
NSN
5961-01-295-6490
MFG
EATON CORPORATION
Description
MOUNTING METHOD: TERMINAL
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG
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BSX28
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012956491
NSN
5961-01-295-6491
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CAPACITANCE RATING IN PICOFARADS: 4.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 500.00 MICROAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 4.5 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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143328013
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012956492
NSN
5961-01-295-6492
143328013
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012956492
NSN
5961-01-295-6492
MFG
EATON CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 275.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.00 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
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204-0013-020
TRANSISTOR
NSN, MFG P/N
5961012958531
NSN
5961-01-295-8531
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-210AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.330 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 200.0 MAXIMUM DRAIN TO GATE VOLTAGE
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94-7034
TRANSISTOR
NSN, MFG P/N
5961012958531
NSN
5961-01-295-8531
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-210AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.330 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 200.0 MAXIMUM DRAIN TO GATE VOLTAGE
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IRFH350-2
TRANSISTOR
NSN, MFG P/N
5961012958531
NSN
5961-01-295-8531
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-210AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.330 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 200.0 MAXIMUM DRAIN TO GATE VOLTAGE