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5961-01-296-8806
20 Products
DLZ30CA
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012968806
NSN
5961-01-296-8806
DLZ30CA
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012968806
NSN
5961-01-296-8806
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
CAPACITANCE RATING IN PICOFARADS: 165.0 MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
COMPONENT NAME AND QUANTITY: 30 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 4.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.192 INCHES MAXIMUM
OVERALL LENGTH: 0.925 INCHES MAXIMUM
OVERALL WIDTH: 0.480 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.190 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
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5082-2805
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012965458
NSN
5961-01-296-5458
5082-2805
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012965458
NSN
5961-01-296-5458
MFG
HEWLETT PACKARD CO
Description
MAJOR COMPONENTS: DIODE MATCHED QUAD 12; PRINTED WIRING BOARD 2
Related Searches:
G823134
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012965458
NSN
5961-01-296-5458
G823134
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012965458
NSN
5961-01-296-5458
MFG
AMERICAN TELEPHONE AND TELEGRAPH CO
Description
MAJOR COMPONENTS: DIODE MATCHED QUAD 12; PRINTED WIRING BOARD 2
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D6002430-1
TRANSISTOR
NSN, MFG P/N
5961012965545
NSN
5961-01-296-5545
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
TRANSISTOR
Related Searches:
472-1466-001
TRANSISTOR
NSN, MFG P/N
5961012965862
NSN
5961-01-296-5862
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 472-1466-001
III END ITEM IDENTIFICATION: FBM NAVIGATION EQUIPMENT
MANUFACTURERS CODE: 94756
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD41152
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
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4807-02-6666
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012967577
NSN
5961-01-296-7577
4807-02-6666
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012967577
NSN
5961-01-296-7577
MFG
WAVETEK U S INC DIV OF WAVETEK CORP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL JUNCTION CONFIGURATION: PN ALL SEMICONDUCTOR DEVICE DIODE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35 ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.090 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.200 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 0.500 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM NOMINAL REGULATOR VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
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JAN1N4148
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012967577
NSN
5961-01-296-7577
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL JUNCTION CONFIGURATION: PN ALL SEMICONDUCTOR DEVICE DIODE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35 ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.090 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.200 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 0.500 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM NOMINAL REGULATOR VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
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105162-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012967602
NSN
5961-01-296-7602
105162-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012967602
NSN
5961-01-296-7602
MFG
NORTHEAST CONTROLS DIV NORTHEAST PROCESS CONTROLS COMPANY
Description
MAJOR COMPONENTS: DIODE 4; PRINTED CIRCUIT BOARD 1
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236550
TRANSISTOR
NSN, MFG P/N
5961012968207
NSN
5961-01-296-8207
MFG
EDO
Description
TRANSISTOR
Related Searches:
200024-0501
TRANSISTOR
NSN, MFG P/N
5961012968208
NSN
5961-01-296-8208
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
TRANSISTOR
Related Searches:
1110365-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012968209
NSN
5961-01-296-8209
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2N3811A
TRANSISTOR
NSN, MFG P/N
5961012968342
NSN
5961-01-296-8342
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 20.00 NANOAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-2N3811A PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 60.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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1N1186A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012968343
NSN
5961-01-296-8343
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.440 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
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6133548-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012968804
NSN
5961-01-296-8804
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.530 INCHES MAXIMUM
OVERALL LENGTH: 2.280 INCHES MAXIMUM
OVERALL WIDTH: 1.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.365 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 220.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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GZ25117C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012968804
NSN
5961-01-296-8804
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.530 INCHES MAXIMUM
OVERALL LENGTH: 2.280 INCHES MAXIMUM
OVERALL WIDTH: 1.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.365 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 220.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
60603A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012968805
NSN
5961-01-296-8805
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.530 INCHES MAXIMUM
OVERALL LENGTH: 2.280 INCHES MAXIMUM
OVERALL WIDTH: 1.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.365 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
6060A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012968805
NSN
5961-01-296-8805
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.530 INCHES MAXIMUM
OVERALL LENGTH: 2.280 INCHES MAXIMUM
OVERALL WIDTH: 1.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.365 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
6133548-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012968805
NSN
5961-01-296-8805
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.530 INCHES MAXIMUM
OVERALL LENGTH: 2.280 INCHES MAXIMUM
OVERALL WIDTH: 1.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.365 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
DD-A0019-108
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012968806
NSN
5961-01-296-8806
DD-A0019-108
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012968806
NSN
5961-01-296-8806
MFG
RAYTHEON E-SYSTEMS INC
Description
CAPACITANCE RATING IN PICOFARADS: 165.0 MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
COMPONENT NAME AND QUANTITY: 30 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 4.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.192 INCHES MAXIMUM
OVERALL LENGTH: 0.925 INCHES MAXIMUM
OVERALL WIDTH: 0.480 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.190 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
DLZ-30CA
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012968806
NSN
5961-01-296-8806
DLZ-30CA
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012968806
NSN
5961-01-296-8806
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CAPACITANCE RATING IN PICOFARADS: 165.0 MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
COMPONENT NAME AND QUANTITY: 30 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 4.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.192 INCHES MAXIMUM
OVERALL LENGTH: 0.925 INCHES MAXIMUM
OVERALL WIDTH: 0.480 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.190 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE