My Quote Request
5961-01-299-0454
20 Products
UM6204E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012990454
NSN
5961-01-299-0454
MFG
MICRO USPD INC
Description
CAPACITANCE RATING IN PICOFARADS: 0.5 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES NOMINAL REVERSE CURRENT, INSTANTANEOUS
POWER RATING PER CHARACTERISTIC: 6.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
200613-005
TRANSISTOR
NSN, MFG P/N
5961012987441
NSN
5961-01-298-7441
MFG
PHYSIO-CONTROL INC .
Description
DESIGN CONTROL REFERENCE: 200613-005
III END ITEM IDENTIFICATION: 6515-01-129-3201
III PURCHASE DESCRIPTION IDENTIFICATION: 28494-200613-005
MANUFACTURERS CODE: 28494
SPECIAL FEATURES: REPAIR PART FOR PHYSIOLOGICAL MONITOR,MDL VSM1
THE MANUFACTURERS DATA:
Related Searches:
200935-001
TRANSISTOR
NSN, MFG P/N
5961012987442
NSN
5961-01-298-7442
MFG
PHYSIO-CONTROL INC .
Description
DESIGN CONTROL REFERENCE: 200935-001
III END ITEM IDENTIFICATION: 6515-01-129-3201
III PURCHASE DESCRIPTION IDENTIFICATION: 28494-200935
MANUFACTURERS CODE: 28494
SPECIAL FEATURES: REPAIR PART FOR PHYSIOLOGICAL MONITOR,MDL VSM1
THE MANUFACTURERS DATA:
Related Searches:
200605-009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012987443
NSN
5961-01-298-7443
200605-009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012987443
NSN
5961-01-298-7443
MFG
PHYSIO-CONTROL INC .
Description
DESIGN CONTROL REFERENCE: 200605-009
III END ITEM IDENTIFICATION: 6515-01-129-3201
III PURCHASE DESCRIPTION IDENTIFICATION: 28494-200506-009
MANUFACTURERS CODE: 28494
SPECIAL FEATURES: REPAIR PART FOR PHYSIOLOGICAL MONITOR,MDL VSM1
THE MANUFACTURERS DATA:
Related Searches:
5616481
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012987956
NSN
5961-01-298-7956
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 1000.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MANUFACTURERS CODE: 53711
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 5616481
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.172 INCHES MINIMUM AND 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.669 INCHES MINIMUM AND 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 53711-5616481 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 60.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 45.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
D8177
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012987956
NSN
5961-01-298-7956
MFG
MICROSEMI CORP-COLORADO
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 1000.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MANUFACTURERS CODE: 53711
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 5616481
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.172 INCHES MINIMUM AND 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.669 INCHES MINIMUM AND 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 53711-5616481 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 60.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 45.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
USD5109
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012987956
NSN
5961-01-298-7956
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 1000.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MANUFACTURERS CODE: 53711
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 5616481
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.172 INCHES MINIMUM AND 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.669 INCHES MINIMUM AND 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 53711-5616481 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 60.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 45.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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2747G-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012987957
NSN
5961-01-298-7957
2747G-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012987957
NSN
5961-01-298-7957
MFG
LOCKHEED MARTIN SIPPICAN INC. DIV LOCKHEED MARTIN MARION USE CAGE CODE 16848 FOR CATALOGING.
Description
CAPACITANCE RATING IN PICOFARADS: 100.0 MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM ON-STATE CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.320 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.255 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.8 MAXIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
LC-6.5
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012987957
NSN
5961-01-298-7957
LC-6.5
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012987957
NSN
5961-01-298-7957
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
CAPACITANCE RATING IN PICOFARADS: 100.0 MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM ON-STATE CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.320 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.255 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.8 MAXIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
151-0308-00
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012987958
NSN
5961-01-298-7958
151-0308-00
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012987958
NSN
5961-01-298-7958
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
2N2918
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012987958
NSN
5961-01-298-7958
2N2918
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012987958
NSN
5961-01-298-7958
MFG
CENTRAL SEMICONDUCTOR CORP DIV CENTRAL STATE INDUSTRIES INC
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
ITS1277-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012987958
NSN
5961-01-298-7958
ITS1277-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012987958
NSN
5961-01-298-7958
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
010.3777
TRANSISTOR
NSN, MFG P/N
5961012988074
NSN
5961-01-298-8074
MFG
ROHDE & SCHWARZ INC
Description
CURRENT RATING PER CHARACTERISTIC: -200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 7.8 MILLIMETERS MAXIMUM
OVERALL LENGTH: 10.9 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.7 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 12.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 16.9 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
634147
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012988198
NSN
5961-01-298-8198
634147
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012988198
NSN
5961-01-298-8198
MFG
FLUKE CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MICROAMPERES MAXIMUM PEAK REPETITIVE OFF-STATE CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 10.0 MILLIMETERS MAXIMUM
OVERALL LENGTH: 92.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 92.0 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, DC AND 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
MCR72-4
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012988198
NSN
5961-01-298-8198
MCR72-4
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012988198
NSN
5961-01-298-8198
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MICROAMPERES MAXIMUM PEAK REPETITIVE OFF-STATE CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 10.0 MILLIMETERS MAXIMUM
OVERALL LENGTH: 92.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 92.0 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, DC AND 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
151-0261-01
TRANSISTOR
NSN, MFG P/N
5961012989452
NSN
5961-01-298-9452
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
SD441-1
TRANSISTOR
NSN, MFG P/N
5961012989452
NSN
5961-01-298-9452
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
TIS92
TRANSISTOR
NSN, MFG P/N
5961012990195
NSN
5961-01-299-0195
MFG
INTERSIL CORPORATION
Description
TRANSISTOR
Related Searches:
1RF9240
TRANSISTOR
NSN, MFG P/N
5961012990453
NSN
5961-01-299-0453
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: -11.00 AMPERES NOMINAL DRAIN CURRENT AND -44.00 AMPERES NOMINAL OFF-STATE CURRENT, PEAK
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-204AA
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.741 INCHES MINIMUM AND 0.807 INCHES MAXIMUM
OVERALL LENGTH: 1.527 INCHES MINIMUM AND 1.544 INCHES MAXIMUM
OVERALL WIDTH: 0.984 INCHES MINIMUM AND 1.016 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
TERMINAL CIRCLE DIAMETER: 0.038 INCHES MINIMUM AND 0.043 INCHES MAXIMUM
TERMINAL LENGTH: 0.443 INCHES MINIMUM AND 0.477 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 QUICK DISCONNECT, MALE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -200.0 NOMINAL DRAIN TO SOURCE VOLTAGE
Related Searches:
495967
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012990454
NSN
5961-01-299-0454
MFG
THALES COMMUNICATIONS S.A.
Description
CAPACITANCE RATING IN PICOFARADS: 0.5 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES NOMINAL REVERSE CURRENT, INSTANTANEOUS
POWER RATING PER CHARACTERISTIC: 6.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS