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5961-01-300-9705
20 Products
5774503-2
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013009705
NSN
5961-01-300-9705
5774503-2
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013009705
NSN
5961-01-300-9705
MFG
NAVAL SEA SYSTEMS COMMAND
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
JAN1N5711
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013007094
NSN
5961-01-300-7094
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
OVERALL LENGTH: 2.170 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
5386280(DELCO)
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013007095
NSN
5961-01-300-7095
5386280(DELCO)
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013007095
NSN
5961-01-300-7095
MFG
GENERAL MOTORS CORP AC-DELCO DIV GOVERNMENT ORDER DEPT
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
W06-14E
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013007320
NSN
5961-01-300-7320
W06-14E
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013007320
NSN
5961-01-300-7320
MFG
GENERAL INSTRUMENT CORP CORPORATE HEADQUARTERS
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
GC1709-15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013007416
NSN
5961-01-300-7416
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 NOMINAL FORWARD VOLTAGE, AVERAGE
Related Searches:
BUW12
TRANSISTOR
NSN, MFG P/N
5961013007810
NSN
5961-01-300-7810
MFG
PHILIPS SEMICONDUCTORS INC
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 4.6 MILLIMETERS MAXIMUM
OVERALL LENGTH: 21.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 15.2 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 13.6 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
911164-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013008062
NSN
5961-01-300-8062
911164-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013008062
NSN
5961-01-300-8062
MFG
MOOG INC.
Description
III END ITEM IDENTIFICATION: PEACE VEC III
Related Searches:
920219-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013008063
NSN
5961-01-300-8063
920219-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013008063
NSN
5961-01-300-8063
MFG
MOOG INC.
Description
III END ITEM IDENTIFICATION: PEACE VEC III
Related Searches:
920084-001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013008154
NSN
5961-01-300-8154
920084-001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013008154
NSN
5961-01-300-8154
MFG
MOOG INC.
Description
III END ITEM IDENTIFICATION: PEACE VEC III
Related Searches:
MCR72-2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013008295
NSN
5961-01-300-8295
MCR72-2
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013008295
NSN
5961-01-300-8295
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 4.82 MILLIMETERS MAXIMUM
OVERALL LENGTH: 16.51 MILLIMETERS MAXIMUM
OVERALL WIDTH: 10.66 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 14.73 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
C30921E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013008424
NSN
5961-01-300-8424
MFG
RCA CORP NEW PRODUCTS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
70HF120
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013008532
NSN
5961-01-300-8532
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-5
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG
THREAD QUANTITY PER INCH: 28
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
984650-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013008821
NSN
5961-01-300-8821
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
300U25A-M15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013008822
NSN
5961-01-300-8822
300U25A-M15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013008822
NSN
5961-01-300-8822
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
639590
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013008822
NSN
5961-01-300-8822
MFG
ESAB GROUP INC THE DBA ESAB WELDING PRODUCTS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2917611-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013008823
NSN
5961-01-300-8823
2917611-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013008823
NSN
5961-01-300-8823
MFG
NAVAL SEA SYSTEMS COMMAND
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.077 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
5082-2824TXV
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013008823
NSN
5961-01-300-8823
5082-2824TXV
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013008823
NSN
5961-01-300-8823
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.077 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
QSCH-1355
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013008823
NSN
5961-01-300-8823
MFG
HEWLETT-PACKARD CO COMMUNICATIONS COMPONENTS/AVANTEK DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.077 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
19A115976P1
TRANSISTOR
NSN, MFG P/N
5961013009566
NSN
5961-01-300-9566
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
III END ITEM IDENTIFICATION: CA-759
Related Searches:
413-5774503-2
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013009705
NSN
5961-01-300-9705
413-5774503-2
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013009705
NSN
5961-01-300-9705
MFG
DYNALEC CORPORATION
Description
SEMICONDUCTOR DEVICE ASSEMBLY