My Quote Request
5961-01-304-5719
20 Products
T1D144
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013045719
NSN
5961-01-304-5719
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
III END ITEM IDENTIFICATION: COMMON DIGITIZER 2C (CD2C)
Related Searches:
2896-151
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013044363
NSN
5961-01-304-4363
2896-151
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013044363
NSN
5961-01-304-4363
MFG
COX & COMPANY INC.
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE AND 40.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-48
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.563 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 98085-2896-151 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
D16238C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013045236
NSN
5961-01-304-5236
MFG
NORTHEAST CONTROLS DIV NORTHEAST PROCESS CONTROLS COMPANY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
267-929-570
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013045281
NSN
5961-01-304-5281
267-929-570
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013045281
NSN
5961-01-304-5281
MFG
ALSTOM POWER CONVERSION USA INC DBA ALSTOM POWER CONVERSION INC.
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
05P00050-0313
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013045312
NSN
5961-01-304-5312
05P00050-0313
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013045312
NSN
5961-01-304-5312
MFG
MAGNETEK INC INDUSTRIAL CONTROLS GROUP DIV DBA MAGNETEK
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
515538-1
TRANSISTOR
NSN, MFG P/N
5961013045441
NSN
5961-01-304-5441
MFG
ITT CORPORATION DBA ITT COMMUNICATIONS SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 250.00 MILLIAMPERES MAXIMUM BASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.210 INCHES NOMINAL
OVERALL LENGTH: 0.975 INCHES NOMINAL
OVERALL WIDTH: 0.650 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 8.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
PRECIOUS MATERIAL AND LOCATION: LEADS AND FLANGE PLATED GOLD
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TEST DATA DOCUMENT: 31550-515538 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLL
~1: CURRENT, DC
~1: ECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 33.0 MAXIM
~2: UM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE
~3: VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
515538-3
TRANSISTOR
NSN, MFG P/N
5961013045442
NSN
5961-01-304-5442
MFG
ITT CORPORATION DBA ITT COMMUNICATIONS SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 750.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
III PRECIOUS MATERIAL AND LOCATION: LEADS AND FLANGE PLATED GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 31550
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 515538-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.210 INCHES NOMINAL
OVERALL LENGTH: 0.975 INCHES NOMINAL
OVERALL WIDTH: 0.650 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 32.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TEST DATA DOCUMENT: 31550-515538 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 32.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE,
~1: STATIC, COLLECTOR OPEN
Related Searches:
514934-3
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013045445
NSN
5961-01-304-5445
514934-3
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013045445
NSN
5961-01-304-5445
MFG
EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES
Description
III END ITEM IDENTIFICATION: COMMON DIGITIZER 2A,CD2A
Related Searches:
MBR1535CT
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013045445
NSN
5961-01-304-5445
MBR1535CT
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013045445
NSN
5961-01-304-5445
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: COMMON DIGITIZER 2A,CD2A
Related Searches:
SBP1630T
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013045445
NSN
5961-01-304-5445
SBP1630T
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013045445
NSN
5961-01-304-5445
MFG
GENERAL SEMICONDUCTOR INC
Description
III END ITEM IDENTIFICATION: COMMON DIGITIZER 2A,CD2A
Related Searches:
TIR102A
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013045445
NSN
5961-01-304-5445
TIR102A
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013045445
NSN
5961-01-304-5445
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
III END ITEM IDENTIFICATION: COMMON DIGITIZER 2A,CD2A
Related Searches:
USD635C
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013045445
NSN
5961-01-304-5445
USD635C
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013045445
NSN
5961-01-304-5445
MFG
MICRO USPD INC
Description
III END ITEM IDENTIFICATION: COMMON DIGITIZER 2A,CD2A
Related Searches:
VSK13
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013045445
NSN
5961-01-304-5445
MFG
MICRO QUALITY SEMICONDUCTOR INC SUB OF MICROSEMI CORP
Description
III END ITEM IDENTIFICATION: COMMON DIGITIZER 2A,CD2A
Related Searches:
128SAV61767-9
TRANSISTOR
NSN, MFG P/N
5961013045478
NSN
5961-01-304-5478
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 128SAV61767-9
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: A-6E ACFT
MANUFACTURERS CODE: 26512
THE MANUFACTURERS DATA:
Related Searches:
1058AS341
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013045479
NSN
5961-01-304-5479
MFG
SEMITRONICS CORP
Description
CAPACITANCE RATING IN PICOFARADS: 2.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 200.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
III END ITEM IDENTIFICATION: AVIONIC SUPPORT EQUIP AND PARTS
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: FWD VOLTAGE AS DESCRIBED
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 30003-1058AS341 DRAWING AND 81349-MIL-PRF-19500/444 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 0.135 MINIMUM FORWARD VOLTAGE, DC AND 0.175 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
A2X2318
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013045479
NSN
5961-01-304-5479
MFG
FEI MICROWAVE INC
Description
CAPACITANCE RATING IN PICOFARADS: 2.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 200.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
III END ITEM IDENTIFICATION: AVIONIC SUPPORT EQUIP AND PARTS
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: FWD VOLTAGE AS DESCRIBED
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 30003-1058AS341 DRAWING AND 81349-MIL-PRF-19500/444 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 0.135 MINIMUM FORWARD VOLTAGE, DC AND 0.175 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
JAN1N5711-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013045479
NSN
5961-01-304-5479
JAN1N5711-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013045479
NSN
5961-01-304-5479
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CAPACITANCE RATING IN PICOFARADS: 2.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 200.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
III END ITEM IDENTIFICATION: AVIONIC SUPPORT EQUIP AND PARTS
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: FWD VOLTAGE AS DESCRIBED
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 30003-1058AS341 DRAWING AND 81349-MIL-PRF-19500/444 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 0.135 MINIMUM FORWARD VOLTAGE, DC AND 0.175 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
PD5479
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013045479
NSN
5961-01-304-5479
MFG
PD & E ELECTRONICS LLC
Description
CAPACITANCE RATING IN PICOFARADS: 2.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 200.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
III END ITEM IDENTIFICATION: AVIONIC SUPPORT EQUIP AND PARTS
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: FWD VOLTAGE AS DESCRIBED
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 30003-1058AS341 DRAWING AND 81349-MIL-PRF-19500/444 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 0.135 MINIMUM FORWARD VOLTAGE, DC AND 0.175 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
45002
TRANSISTOR
NSN, MFG P/N
5961013045718
NSN
5961-01-304-5718
MFG
RF PRODUCTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL AND FLANGE SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 31550
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 515538-2
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.210 INCHES NOMINAL
OVERALL LENGTH: 0.975 INCHES NOMINAL
OVERALL WIDTH: 0.650 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TEST DATA DOCUMENT: 31550-515538 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 32.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE,
~1: STATIC, COLLECTOR OPEN
Related Searches:
515538-2
TRANSISTOR
NSN, MFG P/N
5961013045718
NSN
5961-01-304-5718
MFG
ITT CORPORATION DBA ITT COMMUNICATIONS SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL AND FLANGE SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 31550
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 515538-2
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.210 INCHES NOMINAL
OVERALL LENGTH: 0.975 INCHES NOMINAL
OVERALL WIDTH: 0.650 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TEST DATA DOCUMENT: 31550-515538 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 32.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE,
~1: STATIC, COLLECTOR OPEN