My Quote Request
5961-01-315-3266
20 Products
R7S01216
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013153266
NSN
5961-01-315-3266
MFG
POWEREX INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1250.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.850 INCHES MINIMUM AND 1.900 INCHES MAXIMUM
OVERALL LENGTH: 0.545 INCHES MINIMUM AND 0.605 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO. L04160; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY
TERMINAL TYPE AND QUANTITY: 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXIMUM REVERSE VOLTAGE, DC AND 1200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
R30E10B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013153266
NSN
5961-01-315-3266
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1250.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.850 INCHES MINIMUM AND 1.900 INCHES MAXIMUM
OVERALL LENGTH: 0.545 INCHES MINIMUM AND 0.605 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO. L04160; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY
TERMINAL TYPE AND QUANTITY: 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXIMUM REVERSE VOLTAGE, DC AND 1200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
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152-0901-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013153267
NSN
5961-01-315-3267
152-0901-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013153267
NSN
5961-01-315-3267
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
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FED16FT
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013153267
NSN
5961-01-315-3267
MFG
GENERAL SEMICONDUCTOR INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
133088-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013153268
NSN
5961-01-315-3268
133088-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013153268
NSN
5961-01-315-3268
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1590.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 1000.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 2.850 INCHES MINIMUM AND 2.900 INCHES MAXIMUM
OVERALL LENGTH: 1.030 INCHES MINIMUM AND 1.070 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO. L04159; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY
TERMINAL TYPE AND QUANTITY: 2 CASE AND 2 INSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MINIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1000.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MINIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE AND 1100.0 MINIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
L04159
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013153268
NSN
5961-01-315-3268
L04159
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013153268
NSN
5961-01-315-3268
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1590.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 1000.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 2.850 INCHES MINIMUM AND 2.900 INCHES MAXIMUM
OVERALL LENGTH: 1.030 INCHES MINIMUM AND 1.070 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO. L04159; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY
TERMINAL TYPE AND QUANTITY: 2 CASE AND 2 INSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MINIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1000.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MINIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE AND 1100.0 MINIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
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S52K10B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013153268
NSN
5961-01-315-3268
S52K10B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013153268
NSN
5961-01-315-3268
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1590.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 1000.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 2.850 INCHES MINIMUM AND 2.900 INCHES MAXIMUM
OVERALL LENGTH: 1.030 INCHES MINIMUM AND 1.070 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO. L04159; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY
TERMINAL TYPE AND QUANTITY: 2 CASE AND 2 INSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MINIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1000.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MINIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE AND 1100.0 MINIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
T9G0101203DH
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013153268
NSN
5961-01-315-3268
T9G0101203DH
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013153268
NSN
5961-01-315-3268
MFG
POWEREX INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1590.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 1000.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 2.850 INCHES MINIMUM AND 2.900 INCHES MAXIMUM
OVERALL LENGTH: 1.030 INCHES MINIMUM AND 1.070 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO. L04159; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY
TERMINAL TYPE AND QUANTITY: 2 CASE AND 2 INSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MINIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1000.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MINIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE AND 1100.0 MINIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
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1-195
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013153773
NSN
5961-01-315-3773
1-195
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013153773
NSN
5961-01-315-3773
MFG
PRESTOLITE ELECTRIC INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
101-195
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013153773
NSN
5961-01-315-3773
101-195
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013153773
NSN
5961-01-315-3773
MFG
PRESTOLITE ELECTRIC INCORPORATED
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
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152-0839-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013153901
NSN
5961-01-315-3901
152-0839-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013153901
NSN
5961-01-315-3901
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SUR116A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013153901
NSN
5961-01-315-3901
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2N6214
TRANSISTOR
NSN, MFG P/N
5961013154418
NSN
5961-01-315-4418
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: -2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.295 INCHES MINIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE 6426 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -450.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND -450.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER
Related Searches:
RELEASE 6426
TRANSISTOR
NSN, MFG P/N
5961013154418
NSN
5961-01-315-4418
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: -2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.295 INCHES MINIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE 6426 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -450.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND -450.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER
Related Searches:
167577-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013154859
NSN
5961-01-315-4859
MFG
RAYTHEON MARINE CO HQ
Description
SEMICONDUCTOR DEVICE,DIODE
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1033588-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013154883
NSN
5961-01-315-4883
1033588-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013154883
NSN
5961-01-315-4883
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICES,UNITIZED
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TRANSISTOR
NSN, MFG P/N
5961013154952
NSN
5961-01-315-4952
MFG
SIEMENS COMPONENTS INC INTEGRATED CIRCUIT DIV
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 9.50 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-218
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.482 INCHES NOMINAL
OVERALL LENGTH: 1.200 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.470 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
BUZ48
TRANSISTOR
NSN, MFG P/N
5961013154952
NSN
5961-01-315-4952
MFG
MICROSEMI CORP-COLORADO
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 9.50 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-218
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.482 INCHES NOMINAL
OVERALL LENGTH: 1.200 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.470 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE
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1.5KE10C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013154954
NSN
5961-01-315-4954
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL ON-STATE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: 6625-01-125-3775 METER,IMPEDANCE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 11.0 MAXIMUM BREAKDOWN VOLTAGE, DC
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42632
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013154954
NSN
5961-01-315-4954
MFG
ELECTRO SCIENTIFIC INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL ON-STATE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: 6625-01-125-3775 METER,IMPEDANCE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 11.0 MAXIMUM BREAKDOWN VOLTAGE, DC