My Quote Request
5961-01-317-9376
20 Products
1N5819
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013179376
NSN
5961-01-317-9376
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS OR PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 0.6 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
1901-1134
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013179377
NSN
5961-01-317-9377
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: MICROWAVE
III END ITEM IDENTIFICATION: STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT). GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT (GPETE). CALIBRATION STANDARDS EQUIPMENT.
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
BA284
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013179377
NSN
5961-01-317-9377
MFG
SIEMENS COMPONENTS INC INTEGRATED CIRCUIT DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: MICROWAVE
III END ITEM IDENTIFICATION: STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT). GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT (GPETE). CALIBRATION STANDARDS EQUIPMENT.
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
DG284
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013179377
NSN
5961-01-317-9377
MFG
WAYNE KERR ELECTRONICS INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: MICROWAVE
III END ITEM IDENTIFICATION: STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT). GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT (GPETE). CALIBRATION STANDARDS EQUIPMENT.
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
1384T3100-18
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013179399
NSN
5961-01-317-9399
1384T3100-18
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013179399
NSN
5961-01-317-9399
MFG
GENERAL CRANE AND HOIST INC.
Description
MAJOR COMPONENTS: DIODE 4; HEATSINK 1
Related Searches:
G360B1EB1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013179399
NSN
5961-01-317-9399
G360B1EB1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013179399
NSN
5961-01-317-9399
MFG
MICROSEMI CORP-COLORADO
Description
MAJOR COMPONENTS: DIODE 4; HEATSINK 1
Related Searches:
2N722A
TRANSISTOR
NSN, MFG P/N
5961013180095
NSN
5961-01-318-0095
MFG
SEMITRONICS CORP
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
352-8011-320
TRANSISTOR
NSN, MFG P/N
5961013180096
NSN
5961-01-318-0096
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT-DOUBLE BASE
Related Searches:
352-8011-370
TRANSISTOR
NSN, MFG P/N
5961013180097
NSN
5961-01-318-0097
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
352-8539-012
TRANSISTOR
NSN, MFG P/N
5961013180099
NSN
5961-01-318-0099
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT-DOUBLE EMITTER
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
352-1046-010
TRANSISTOR
NSN, MFG P/N
5961013180101
NSN
5961-01-318-0101
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
INTERNAL CONFIGURATION: FIELD EFFECT
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
352-1168-010
TRANSISTOR
NSN, MFG P/N
5961013180102
NSN
5961-01-318-0102
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
352-1173-010
TRANSISTOR
NSN, MFG P/N
5961013180103
NSN
5961-01-318-0103
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
352-1175-030
TRANSISTOR
NSN, MFG P/N
5961013180104
NSN
5961-01-318-0104
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT-DOUBLE EMITTER
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
352-1178-010
TRANSISTOR
NSN, MFG P/N
5961013180105
NSN
5961-01-318-0105
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
352-1214-010
TRANSISTOR
NSN, MFG P/N
5961013180106
NSN
5961-01-318-0106
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
352-1508-010
TRANSISTOR
NSN, MFG P/N
5961013180107
NSN
5961-01-318-0107
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
352-5002-010
TRANSISTOR
NSN, MFG P/N
5961013180108
NSN
5961-01-318-0108
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
352-5035-010
TRANSISTOR
NSN, MFG P/N
5961013180109
NSN
5961-01-318-0109
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT-DOUBLE EMITTER
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
352-5508-010
TRANSISTOR
NSN, MFG P/N
5961013180110
NSN
5961-01-318-0110
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
INCLOSURE MATERIAL: PLASTIC
SEMICONDUCTOR MATERIAL: SILICON