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5961-01-318-3093
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2N3501
TRANSISTOR
NSN, MFG P/N
5961013183093
NSN
5961-01-318-3093
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) DEPARTURE FROM CITED DOCUMENT: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
CRITICALITY CODE JUSTIFICATION: ZZZW
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 2N3501
SPEC/STD CONTROLLING DATA:
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922-6520-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013180129
NSN
5961-01-318-0129
922-6520-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013180129
NSN
5961-01-318-0129
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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353-3745-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013180130
NSN
5961-01-318-0130
353-3745-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013180130
NSN
5961-01-318-0130
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
III END ITEM IDENTIFICATION: USED ON DME-42 P/N 622-6263-003
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353-3768-050
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013180131
NSN
5961-01-318-0131
353-3768-050
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013180131
NSN
5961-01-318-0131
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
III END ITEM IDENTIFICATION: USED ON DME-42 P/N 622-6263-003
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353-6550-330
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013180132
NSN
5961-01-318-0132
353-6550-330
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013180132
NSN
5961-01-318-0132
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
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353-6558-050
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013180133
NSN
5961-01-318-0133
353-6558-050
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013180133
NSN
5961-01-318-0133
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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353-6614-030
SEMICONDUCTOR DEVICE,DIODE
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5961013180134
NSN
5961-01-318-0134
353-6614-030
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013180134
NSN
5961-01-318-0134
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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922-6104-050
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013180135
NSN
5961-01-318-0135
922-6104-050
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013180135
NSN
5961-01-318-0135
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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353-0297-040
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NSN
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013180136
NSN
5961-01-318-0136
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
III END ITEM IDENTIFICATION: USED ON HPU-74 P/N 622-6198-002
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353-3591-270
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013180137
NSN
5961-01-318-0137
353-3591-270
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013180137
NSN
5961-01-318-0137
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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353-6550-270
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013180138
NSN
5961-01-318-0138
353-6550-270
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013180138
NSN
5961-01-318-0138
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
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NSN, MFG P/N
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5961013180139
NSN
5961-01-318-0139
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
COMPONENT NAME AND QUANTITY: 8 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.040 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 4 PIN
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NSN, MFG P/N
5961013180139
NSN
5961-01-318-0139
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013180139
NSN
5961-01-318-0139
MFG
SKYWORKS SOLUTIONS INC.
Description
COMPONENT NAME AND QUANTITY: 8 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.040 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 4 PIN
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013181753
NSN
5961-01-318-1753
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 240.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
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CE125413
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013181753
NSN
5961-01-318-1753
MFG
PARKER HANNIFIN LIMITED
Description
CURRENT RATING PER CHARACTERISTIC: 240.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
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JANTX1N4617
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013182932
NSN
5961-01-318-2932
JANTX1N4617
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013182932
NSN
5961-01-318-2932
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 95.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4617-1
FEATURES PROVIDED: BURN IN AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.4 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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535396-2
TRANSISTOR
NSN, MFG P/N
5961013183089
NSN
5961-01-318-3089
MFG
RAYTHEON COMPANY
Description
III END ITEM IDENTIFICATION: MAGNETIC DETECTOR R/N 80058 DT-323/ASQ-81V
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TRANSISTOR
NSN, MFG P/N
5961013183090
NSN
5961-01-318-3090
MFG
RAYTHEON COMPANY
Description
III END ITEM IDENTIFICATION: MAGNETIC DETECTOR R/N 80058 DT-323/ASQ-81V
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507301-2
TRANSISTOR
NSN, MFG P/N
5961013183091
NSN
5961-01-318-3091
MFG
RAYTHEON COMPANY
Description
III END ITEM IDENTIFICATION: MAGNETIC DETECTOR R/N 80058 DT-323/ASQ-81V
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536083-2
TRANSISTOR
NSN, MFG P/N
5961013183092
NSN
5961-01-318-3092
MFG
RAYTHEON COMPANY
Description
III END ITEM IDENTIFICATION: MAGNETIC DETECTOR R/N 80058 DT-323/ASQ-81V