My Quote Request
5961-01-326-0626
20 Products
CL910376
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013260626
NSN
5961-01-326-0626
CL910376
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013260626
NSN
5961-01-326-0626
MFG
SYSTEMS MATERIAL HANDLING COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
44A717068-001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013260626
NSN
5961-01-326-0626
44A717068-001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013260626
NSN
5961-01-326-0626
MFG
GENERAL ELECTRIC CO GENERAL PURPOSE CONTROL DEPT MEBANE OPNS
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
5169138-27
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013260626
NSN
5961-01-326-0626
5169138-27
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013260626
NSN
5961-01-326-0626
MFG
NACCO MATERIALS HANDLING GROUP INC DBA YALE MATERIALS HANDLING DIV NACCO MATERIALS HANDLING GROUP INC.
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
300PA120
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013260627
NSN
5961-01-326-0627
300PA120
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013260627
NSN
5961-01-326-0627
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 470.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 300.00 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE AND 150.00 MILLIAMPERES NOMINAL GATE TRIGGER CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.625 INCHES NOMINAL
OVERALL LENGTH: 0.555 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE AND 1 PIN AND 1 QUICK DISCONNECT, MALE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
T620-12-30-0-4-DN
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013260627
NSN
5961-01-326-0627
T620-12-30-0-4-DN
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013260627
NSN
5961-01-326-0627
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 470.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 300.00 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE AND 150.00 MILLIAMPERES NOMINAL GATE TRIGGER CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.625 INCHES NOMINAL
OVERALL LENGTH: 0.555 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE AND 1 PIN AND 1 QUICK DISCONNECT, MALE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
1035165-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013261833
NSN
5961-01-326-1833
1035165-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013261833
NSN
5961-01-326-1833
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
3110161-2
TRANSISTOR
NSN, MFG P/N
5961013262357
NSN
5961-01-326-2357
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: 3110161-2
III END ITEM IDENTIFICATION: AWG-9 MISSILE CONTROL SYSTEMS
MANUFACTURERS CODE: 82577
THE MANUFACTURERS DATA:
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BD810
TRANSISTOR
NSN, MFG P/N
5961013262358
NSN
5961-01-326-2358
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.570 INCHES MINIMUM AND 0.620 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 90.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.025 INCHES MINIMUM AND 0.035 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
2N6969
TRANSISTOR
NSN, MFG P/N
5961013262359
NSN
5961-01-326-2359
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-213AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/569
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.260 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 70.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/569 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
JANTX2N6969
TRANSISTOR
NSN, MFG P/N
5961013262359
NSN
5961-01-326-2359
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-213AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/569
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.260 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 70.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/569 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
1854-1143
TRANSISTOR
NSN, MFG P/N
5961013262360
NSN
5961-01-326-2360
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.100 INCHES NOMINAL
OVERALL LENGTH: 0.687 INCHES NOMINAL
OVERALL WIDTH: 0.430 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 QUICK DISCONNECT, MALE
TRANSFER RATIO: 90.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 250.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
MRF580A
TRANSISTOR
NSN, MFG P/N
5961013262360
NSN
5961-01-326-2360
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.100 INCHES NOMINAL
OVERALL LENGTH: 0.687 INCHES NOMINAL
OVERALL WIDTH: 0.430 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 QUICK DISCONNECT, MALE
TRANSFER RATIO: 90.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 250.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
1854-1142
TRANSISTOR
NSN, MFG P/N
5961013262361
NSN
5961-01-326-2361
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 0.210 INCHES NOMINAL
OVERALL WIDTH: 0.205 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 625.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 50.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 300.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MINIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
MPS571
TRANSISTOR
NSN, MFG P/N
5961013262361
NSN
5961-01-326-2361
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 0.210 INCHES NOMINAL
OVERALL WIDTH: 0.205 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 625.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 50.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 300.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MINIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
007340
TRANSISTOR
NSN, MFG P/N
5961013262791
NSN
5961-01-326-2791
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: METAL AND GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.270 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.439 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 0.990 INCHES MINIMUM AND 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 650.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 400.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
JANTX2N6673
TRANSISTOR
NSN, MFG P/N
5961013262791
NSN
5961-01-326-2791
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: METAL AND GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.270 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.439 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 0.990 INCHES MINIMUM AND 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 650.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 400.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
MRF171
TRANSISTOR
NSN, MFG P/N
5961013262792
NSN
5961-01-326-2792
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL OR CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.229 INCHES MINIMUM AND 0.281 INCHES MAXIMUM
OVERALL LENGTH: 0.960 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
OVERALL WIDTH: 0.790 INCHES MINIMUM AND 0.810 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 115.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 65.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
353-3811-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013262793
NSN
5961-01-326-2793
353-3811-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013262793
NSN
5961-01-326-2793
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: LIMITER
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.075 INCHES MINIMUM AND 0.086 INCHES MAXIMUM
OVERALL LENGTH: 0.040 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 FLANGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 180.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
94509096
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013262793
NSN
5961-01-326-2793
MFG
SKYWORKS SOLUTIONS INC.
Description
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: LIMITER
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.075 INCHES MINIMUM AND 0.086 INCHES MAXIMUM
OVERALL LENGTH: 0.040 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 FLANGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 180.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
GC47105-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013262793
NSN
5961-01-326-2793
GC47105-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013262793
NSN
5961-01-326-2793
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: LIMITER
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.075 INCHES MINIMUM AND 0.086 INCHES MAXIMUM
OVERALL LENGTH: 0.040 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 FLANGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 180.0 MAXIMUM BREAKDOWN VOLTAGE, DC